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Results: 1-25 | 26-30
Results: 1-25/30
INVESTIGATION OF MECHANISMS OF VACANCY GENERATION IN SILICON IN THE PRESENCE OF A TISI2 FILM
Authors: HERNER SB JONES KS GOSSMANN HJ TUNG RT POATE JM LUFTMAN HS
Citation: Sb. Herner et al., INVESTIGATION OF MECHANISMS OF VACANCY GENERATION IN SILICON IN THE PRESENCE OF A TISI2 FILM, Journal of applied physics, 82(2), 1997, pp. 583-588
PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC RAFFERTY CS GILMER GH JARAIZ M POATE JM LUFTMAN HS HAYNES TE
Citation: Pa. Stolk et al., PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON, Journal of applied physics, 81(9), 1997, pp. 6031-6050
THE INTERSTITIAL FRACTION OF DIFFUSIVITY OF COMMON DOPANTS IN SI
Authors: GOSSMANN HJ HAYNES TE STOLK PA JACOBSON DC GILMER GH POATE JM LUFTMAN HS MOGI TK THOMPSON MO
Citation: Hj. Gossmann et al., THE INTERSTITIAL FRACTION OF DIFFUSIVITY OF COMMON DOPANTS IN SI, Applied physics letters, 71(26), 1997, pp. 3862-3864
SURFACE ROUGHNESS-INDUCED ARTIFACTS IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILING AND A SIMPLE TECHNIQUE TO SMOOTH THE SURFACE
Authors: HERNER SB GILA BP JONES KS GOSSMANN HJ POATE JM LUFTMAN HS
Citation: Sb. Herner et al., SURFACE ROUGHNESS-INDUCED ARTIFACTS IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILING AND A SIMPLE TECHNIQUE TO SMOOTH THE SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3593-3595
PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS
Authors: HEIMBROOK LA BAIOCCHI FA BITTNER TC GEVA M LUFTMAN HS NAKAHARA S
Citation: La. Heimbrook et al., PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 202-212
THERMAL NITRIDATION ENHANCED DIFFUSION OF SB AND SI(100) DOPING SUPERLATTICES
Authors: MOGI TK THOMPSON MO GOSSMANN HJ POATE JM LUFTMAN HS
Citation: Tk. Mogi et al., THERMAL NITRIDATION ENHANCED DIFFUSION OF SB AND SI(100) DOPING SUPERLATTICES, Applied physics letters, 69(9), 1996, pp. 1273-1275
THE INFLUENCE OF TISI2 AND COSI2 GROWTH ON SI NATIVE POINT-DEFECTS - THE ROLE OF THE DIFFUSING SPECIES
Authors: HERNER SB JONES KS GOSSMANN HJ TUNG RT POATE JM LUFTMAN HS
Citation: Sb. Herner et al., THE INFLUENCE OF TISI2 AND COSI2 GROWTH ON SI NATIVE POINT-DEFECTS - THE ROLE OF THE DIFFUSING SPECIES, Applied physics letters, 68(20), 1996, pp. 2870-2872
IN-SITU ARSENIC-DOPED POLYCRYSTALLINE SILICON AS A LOW THERMAL BUDGETEMITTER CONTACT FOR SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: KING CA JOHNSON RW PINTO MR LUFTMAN HS MUNANKA J
Citation: Ca. King et al., IN-SITU ARSENIC-DOPED POLYCRYSTALLINE SILICON AS A LOW THERMAL BUDGETEMITTER CONTACT FOR SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 68(2), 1996, pp. 226-228
POINT-DEFECTS IN SI AFTER FORMATION OF A TISI2 FILM - EVIDENCE FOR VACANCY SUPERSATURATION AND INTERSTITIAL DEPLETION
Authors: HERNER SB JONES KS GOSSMANN HJ POATE JM LUFTMAN HS
Citation: Sb. Herner et al., POINT-DEFECTS IN SI AFTER FORMATION OF A TISI2 FILM - EVIDENCE FOR VACANCY SUPERSATURATION AND INTERSTITIAL DEPLETION, Applied physics letters, 68(12), 1996, pp. 1687-1689
ELECTRON-MICROSCOPY OF THE ORDERED BORON 2X1 STRUCTURE BURIED IN CRYSTALLINE SILICON
Authors: WEIR BE EAGLESHAM DJ FELDMAN LC LUFTMAN HS HEADRICK RL
Citation: Be. Weir et al., ELECTRON-MICROSCOPY OF THE ORDERED BORON 2X1 STRUCTURE BURIED IN CRYSTALLINE SILICON, Applied surface science, 84(4), 1995, pp. 413-418
STRESS-FREE AND MOISTURE INSENSITIVE SILICON-OXIDE DIELECTRIC FILMS FORMED BY MOLECULAR-BEAM DEPOSITION
Authors: CHAND N KOLA RR OPILA RL COMIZZOLI RB KRAUTTER H SERGENT AM TSANG WT OSENBACH JW LUFTMAN HS
Citation: N. Chand et al., STRESS-FREE AND MOISTURE INSENSITIVE SILICON-OXIDE DIELECTRIC FILMS FORMED BY MOLECULAR-BEAM DEPOSITION, Journal of applied physics, 78(5), 1995, pp. 3315-3322
INFLUENCE OF FLUORINE IMPLANT ON BORON-DIFFUSION - DETERMINATION OF PROCESS MODELING PARAMETERS
Authors: VUONG HH GOSSMANN HJ RAFFERTY CS LUFTMAN HS UNTERWALD FC JACOBSON DC AHRENS RE BOONE T ZEITZOFF PM
Citation: Hh. Vuong et al., INFLUENCE OF FLUORINE IMPLANT ON BORON-DIFFUSION - DETERMINATION OF PROCESS MODELING PARAMETERS, Journal of applied physics, 77(7), 1995, pp. 3056-3060
DETERMINATION OF SI SELF-INTERSTITIAL DIFFUSIVITIES FROM THE OXIDATION-ENHANCED DIFFUSION IN B-DOPING-SUPERLATTICES - THE INFLUENCE OF THE MARKER LAYERS
Authors: GOSSMANN HJ GILMER GH RAFFERTY CS UNTERWALD FC BOONE T POATE JM LUFTMAN HS FRANK W
Citation: Hj. Gossmann et al., DETERMINATION OF SI SELF-INTERSTITIAL DIFFUSIVITIES FROM THE OXIDATION-ENHANCED DIFFUSION IN B-DOPING-SUPERLATTICES - THE INFLUENCE OF THE MARKER LAYERS, Journal of applied physics, 77(5), 1995, pp. 1948-1951
BEHAVIOR OF INTRINSIC SI POINT-DEFECTS DURING ANNEALING IN VACUUM
Authors: GOSSMANN HJ RAFFERTY CS UNTERWALD FC BOONE T MOGI TK THOMPSON MO LUFTMAN HS
Citation: Hj. Gossmann et al., BEHAVIOR OF INTRINSIC SI POINT-DEFECTS DURING ANNEALING IN VACUUM, Applied physics letters, 67(11), 1995, pp. 1558-1560
TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC POATE JM LUFTMAN HS
Citation: Pa. Stolk et al., TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON, Applied physics letters, 66(5), 1995, pp. 568-570
INTERFACE ANALYSIS OF DRY-ETCHED AND MOLECULAR-BEAM EPITAXIAL REGROWNALGAAS
Authors: GROBER LH HONG M MANNAERTS JP FREUND RS LUFTMAN HS CHU SNG
Citation: Lh. Grober et al., INTERFACE ANALYSIS OF DRY-ETCHED AND MOLECULAR-BEAM EPITAXIAL REGROWNALGAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1038-1042
ELECTRON-BEAM-INDUCED CURRENT DETERMINATION OF SHALLOW JUNCTION DEPTH
Authors: FITZGERALD EA GOSSMANN HJ UNTERWALD FC LUFTMAN HS MONROE D
Citation: Ea. Fitzgerald et al., ELECTRON-BEAM-INDUCED CURRENT DETERMINATION OF SHALLOW JUNCTION DEPTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 357-361
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF BORON-DOPED SI1-XGEX STRAINED LAYERS
Authors: MORIYA N FELDMAN LC LUFTMAN HS KING CA
Citation: N. Moriya et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF BORON-DOPED SI1-XGEX STRAINED LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 383-386
IN-SITU PROCESS FOR ALGAAS COMPOUND SEMICONDUCTOR - MATERIALS SCIENCEAND DEVICE FABRICATION
Authors: HONG M CHOQUETTE KD MANNAERTS JP GROBER LH FREUND RS VAKHSHOORI D CHU SNG LUFTMAN HS WETZEL RC
Citation: M. Hong et al., IN-SITU PROCESS FOR ALGAAS COMPOUND SEMICONDUCTOR - MATERIALS SCIENCEAND DEVICE FABRICATION, Journal of electronic materials, 23(7), 1994, pp. 625-634
INTERFACIAL CHARACTERISTICS OF ALGAAS AFTER IN-SITU ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING AND MOLECULAR-BEAM EPITAXIAL REGROWTH
Authors: HONG M MANNAERTS JP GROBER L CHU SNG LUFTMAN HS CHOQUETTE KD FREUND RS
Citation: M. Hong et al., INTERFACIAL CHARACTERISTICS OF ALGAAS AFTER IN-SITU ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING AND MOLECULAR-BEAM EPITAXIAL REGROWTH, Journal of applied physics, 75(6), 1994, pp. 3105-3111
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE, Applied physics letters, 65(10), 1994, pp. 1322-1323
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS, Applied physics letters, 64(3), 1994, pp. 312-314
SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SCHUBERT EF PFEIFFER L WEST KW LUFTMAN HS ZYDZIK GJ
Citation: Ef. Schubert et al., SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(17), 1994, pp. 2238-2240
HYDROGEN PLASMA PROCESSING OF GAAS AND ALGAAS
Authors: CHOQUETTE KD FREUND RS HONG M LUFTMAN HS CHU SNG MANNAERTS JP WETZEL RC
Citation: Kd. Choquette et al., HYDROGEN PLASMA PROCESSING OF GAAS AND ALGAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2025-2032
TI PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS/
Authors: KATZ A WANG KW BAIOCCHI FA DAUTREMONTSMITH WC LANE E LUFTMAN HS VARMA RR CURNAN H
Citation: A. Katz et al., TI PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS/, Materials chemistry and physics, 33(3-4), 1993, pp. 281-288
Risultati: 1-25 | 26-30