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Results: 1-21 |
Results: 21
Tandem translocation of chromosomes 22 and 15 with two preserved satellitestalk regions and deletion 22q13.3-qter
Authors: Lee, KA Kim, SH Lee, MH Law, ME Jalal, SM
Citation: Ka. Lee et al., Tandem translocation of chromosomes 22 and 15 with two preserved satellitestalk regions and deletion 22q13.3-qter, AM J MED G, 104(4), 2001, pp. 291-294
Analysis of hurthle cell neoplasms of the thyroid by interphase fluorescence in situ hybridization
Authors: Erickson, LA Jalal, SM Goellner, JR Law, ME Harwood, A Jin, L Roche, PC Lloyd, RV
Citation: La. Erickson et al., Analysis of hurthle cell neoplasms of the thyroid by interphase fluorescence in situ hybridization, AM J SURG P, 25(7), 2001, pp. 911-917
Application of multicolor fluorescent in situ hybridization for enhanced characterization of chromosomal abnormalities in congenital disorders
Authors: Jalal, SM Law, ME Lindor, NM Thompson, KJ Sekhon, GS
Citation: Sm. Jalal et al., Application of multicolor fluorescent in situ hybridization for enhanced characterization of chromosomal abnormalities in congenital disorders, MAYO CLIN P, 76(1), 2001, pp. 16-21
Diffusion of single quantum well Si1-xGex/Si layers under vacancy supersaturation
Authors: Griglione, M Anderson, TJ Law, ME Jones, KS van den Bogaard, A Puga-Lambers, M
Citation: M. Griglione et al., Diffusion of single quantum well Si1-xGex/Si layers under vacancy supersaturation, J APPL PHYS, 89(5), 2001, pp. 2904-2906
Detection of diagnostically critical, often hidden, anomalies in complex karyotypes of haematological disorders using multicolour fluorescence in situ hybridization
Authors: Jalal, SM Law, ME Stamberg, J Fonseca, R Seely, JR Myers, WH Hanson, CA
Citation: Sm. Jalal et al., Detection of diagnostically critical, often hidden, anomalies in complex karyotypes of haematological disorders using multicolour fluorescence in situ hybridization, BR J HAEM, 112(4), 2001, pp. 975-980
Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon
Authors: Adam, LS Law, ME Szpala, S Simpson, PJ Lawther, D Dokumaci, O Hegde, S
Citation: Ls. Adam et al., Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon, APPL PHYS L, 79(5), 2001, pp. 623-625
Simulation of defects and diffusion phenomena in silicon
Authors: Law, ME Gilmer, GH Jaraiz, M
Citation: Me. Law et al., Simulation of defects and diffusion phenomena in silicon, MRS BULL, 25(6), 2000, pp. 45-50
Characterization of generation-recombination noise using a physics-based device noise simulator
Authors: Hou, FC Bosman, G Law, ME
Citation: Fc. Hou et al., Characterization of generation-recombination noise using a physics-based device noise simulator, MICROEL REL, 40(11), 2000, pp. 1883-1886
Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizingambients
Authors: Griglione, M Anderson, TJ Haddara, YM Law, ME Jones, KS van den Bogaard, A
Citation: M. Griglione et al., Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizingambients, J APPL PHYS, 88(3), 2000, pp. 1366-1372
Diffusion of implanted nitrogen in silicon
Authors: Adam, LS Law, ME Jones, KS Dokumaci, O Murthy, CS Hegde, S
Citation: Ls. Adam et al., Diffusion of implanted nitrogen in silicon, J APPL PHYS, 87(5), 2000, pp. 2282-2284
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
Authors: Haddara, YM Folmer, BT Law, ME Buyuklimanli, T
Citation: Ym. Haddara et al., Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon, APPL PHYS L, 77(13), 2000, pp. 1976-1978
Energy dependence of transient enhanced diffusion and defect kinetics
Authors: Saleh, H Law, ME Bharatan, S Jones, KS Krishnamoorthy, V Buyuklimanli, T
Citation: H. Saleh et al., Energy dependence of transient enhanced diffusion and defect kinetics, APPL PHYS L, 77(1), 2000, pp. 112-114
Utility of multicolor fluorescent in situ hybridization in clinical cytogenetics
Authors: Jalal, SM Law, ME
Citation: Sm. Jalal et Me. Law, Utility of multicolor fluorescent in situ hybridization in clinical cytogenetics, GENET MED, 1(5), 1999, pp. 181-186
Guidelines for buccal smear collection in breast-fed infants
Authors: Babovic-Vuksanovic, D Michels, VV Law, ME Bailey, R Wyatt, WA Lindor, NM Jalal, SM
Citation: D. Babovic-vuksanovic et al., Guidelines for buccal smear collection in breast-fed infants, AM J MED G, 84(4), 1999, pp. 357-360
Detection of t(2;5) in anaplastic large cell lymphoma - Comparison of immunohistochemical studies, FISH, and RT-PCR in paraffin-embedded tissue
Authors: Cataldo, KA Jalal, SM Law, ME Ansell, SM Inwards, DJ Fine, M Arber, DA Pulford, KA Strickler, JG
Citation: Ka. Cataldo et al., Detection of t(2;5) in anaplastic large cell lymphoma - Comparison of immunohistochemical studies, FISH, and RT-PCR in paraffin-embedded tissue, AM J SURG P, 23(11), 1999, pp. 1386-1392
Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon
Authors: Robertson, LS Law, ME Jones, KS Rubin, LM Jackson, J Chi, P Simons, DS
Citation: Ls. Robertson et al., Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon, APPL PHYS L, 75(24), 1999, pp. 3844-3846
Effect of arsenic doping on {311} defect dissolution in silicon
Authors: Brindos, R Keys, P Jones, KS Law, ME
Citation: R. Brindos et al., Effect of arsenic doping on {311} defect dissolution in silicon, APPL PHYS L, 75(2), 1999, pp. 229-231
Effect of the end-of-range loop layer depth on the evolution of {311} defects
Authors: Raman, R Law, ME Krishnamoorthy, V Jones, KS
Citation: R. Raman et al., Effect of the end-of-range loop layer depth on the evolution of {311} defects, APPL PHYS L, 74(5), 1999, pp. 700-702
Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron-interstitial cluster formation
Authors: Lilak, AD Earles, SK Law, ME Jones, KS
Citation: Ad. Lilak et al., Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron-interstitial cluster formation, APPL PHYS L, 74(14), 1999, pp. 2038-2040
Effect of surface proximity on end-of-range loop dissolution in silicon
Authors: Raman, R Law, ME Krishnamoorthy, V Jones, KS Herner, SB
Citation: R. Raman et al., Effect of surface proximity on end-of-range loop dissolution in silicon, APPL PHYS L, 74(11), 1999, pp. 1591-1593
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
Authors: Law, ME Cea, SM
Citation: Me. Law et Sm. Cea, Continuum based modeling of silicon integrated circuit processing: An object oriented approach, COMP MAT SC, 12(4), 1998, pp. 289-308
Risultati: 1-21 |