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Results: 1-25/119
Spontaneous formation of nanostructures on crystal surfaces
Authors: Shchukin, VA Ledentsov, NN Bimberg, D
Citation: Va. Shchukin et al., Spontaneous formation of nanostructures on crystal surfaces, PHYSICA E, 9(1), 2001, pp. 140-148
1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots
Authors: Zhukov, AE Volovik, BV Mikhrin, SS Maleev, NA Tsatsul'nikov, AF Nikitina, EV Kayander, IN Ustinov, VM Ledentsov, NN
Citation: Ae. Zhukov et al., 1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots, TECH PHYS L, 27(9), 2001, pp. 734-736
InGaAs nanodomains formed in situ on the surface of (Al,Ga)As
Authors: Krestnikov, IL Cherkashin, NA Sizov, DS Bedarev, DA Kochnev, IV Lantratov, VM Ledentsov, NN
Citation: Il. Krestnikov et al., InGaAs nanodomains formed in situ on the surface of (Al,Ga)As, TECH PHYS L, 27(3), 2001, pp. 233-235
Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix
Authors: Cirlin, GE Werner, P Gosele, G Volovik, BV Ustinov, VM Ledentsov, NN
Citation: Ge. Cirlin et al., Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix, TECH PHYS L, 27(1), 2001, pp. 14-16
Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Vasil'ev, AP Ustinov, VM Ledentsov, NN Alferov, ZI
Citation: Na. Maleev et al., Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates, SEMICONDUCT, 35(7), 2001, pp. 847-853
1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them
Authors: Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation: Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs
Authors: Soshnikov, IP Gorbenko, OM Golubok, AO Ledentsov, NN
Citation: Ip. Soshnikov et al., Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs, SEMICONDUCT, 35(3), 2001, pp. 347-352
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
Authors: Livshits, DA Egorov, AY Kochnev, IV Kapitonov, VA Lantratov, VM Ledentsov, NN Nalyot, TA Tarasov, IS
Citation: Da. Livshits et al., Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers, SEMICONDUCT, 35(3), 2001, pp. 365-369
Study of electron capture by quantum dots using deep-level transient spectroscopy
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Ledentsov, NN
Citation: Mm. Sobolev et al., Study of electron capture by quantum dots using deep-level transient spectroscopy, SEMICONDUCT, 35(10), 2001, pp. 1175-1181
Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays
Authors: Maksimenko, SA Slepyan, GY Kalosha, VP Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Sa. Maksimenko et al., Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays, MAT SCI E B, 82(1-3), 2001, pp. 215-217
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Novel infrared quantum dot lasers: Theory and reality
Authors: Bimberg, D Grundmann, M Ledentsov, NN Mao, MH Ribbat, C Sellin, R Ustinov, VM Zhukov, AE Alferov, ZI Lott, JA
Citation: D. Bimberg et al., Novel infrared quantum dot lasers: Theory and reality, PHYS ST S-B, 224(3), 2001, pp. 787-796
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Authors: Maleev, NA Krestnikov, IL Kovsh, AR Sakharov, AV Zhukov, AE Ustinov, VM Mikhrin, SS Passenberg, W Pawlowski, E Moller, C Tsatsulnikov, AF Kunzel, H Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
Authors: Weber, A Goede, K Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Ledentsov, NN Kopev, PS Alferov, ZI
Citation: A. Weber et al., Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 833-837
Entropy-driven effects in self-organized formation of quantum dots
Authors: Shchukin, VA Ledentsov, NN Hoffmann, A Bimberg, D Soshnikov, IP Volovik, BV Ustinov, VM Litvinov, D Gerthsen, D
Citation: Va. Shchukin et al., Entropy-driven effects in self-organized formation of quantum dots, PHYS ST S-B, 224(2), 2001, pp. 503-508
Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well
Authors: Guffarth, F Heitz, R Schliwa, A Stier, O Kovsh, AR Ustinov, V Ledentsov, NN Bimberg, D
Citation: F. Guffarth et al., Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well, PHYS ST S-B, 224(1), 2001, pp. 61-65
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
Authors: Cirlin, GE Petrov, VN Polyakov, NK Egorov, VA Samsonenko, YB Volovik, BV Denisov, DV Ustinov, VM Alferov, ZL Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI
Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
Authors: Ledentsov, NN Shchukin, VA Bimberg, D Ustinov, VM Cherkashin, NA Musikhin, YG Volovik, BV Cirlin, GE Alferov, ZI
Citation: Nn. Ledentsov et al., Reversibility of the island shape, volume and density in Stranski-Krastanow growth, SEMIC SCI T, 16(6), 2001, pp. 502-506
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
Authors: Volovik, BV Kovsh, AR Passenberg, W Kuenzel, H Grote, N Cherkashin, NA Musikhin, YG Ledentsov, NN Bimberg, D Ustinov, VM
Citation: Bv. Volovik et al., Optical and structural properties of self-organized InGaAsN/GaAs nanostructures, SEMIC SCI T, 16(3), 2001, pp. 186-190
1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
Authors: Krestnikov, IL Maleev, NA Sakharov, AV Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Lott, JA
Citation: Il. Krestnikov et al., 1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices, SEMIC SCI T, 16(10), 2001, pp. 844-848
Strain engineering of self-organized InAs quantum dots - art. no. 085305
Authors: Guffarth, F Heitz, R Schliwa, A Stier, O Ledentsov, NN Kovsh, AR Ustinov, VM Bimberg, D
Citation: F. Guffarth et al., Strain engineering of self-organized InAs quantum dots - art. no. 085305, PHYS REV B, 6408(8), 2001, pp. 5305
Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices
Authors: Krestnikov, IL Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices, PHYS ST S-A, 183(2), 2001, pp. 207-233
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