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Results: 1-23 |
Results: 23
Theoretical analysis of placement error due to absorber pattern on extremeultraviolet lithography mask
Authors: Chiba, A Takahashi, M Yamanashi, H Hoko, H Hoshino, E Hirano, N Lee, BT Ogawa, T Ito, M Okazaki, S
Citation: A. Chiba et al., Theoretical analysis of placement error due to absorber pattern on extremeultraviolet lithography mask, JPN J A P 1, 40(6A), 2001, pp. 3947-3952
AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contact
Authors: Lee, JL Kim, YT Oh, JW Lee, BT
Citation: Jl. Lee et al., AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contact, JPN J A P 1, 40(3A), 2001, pp. 1188-1193
Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter
Authors: Shim, KH Paek, MC Lee, BT Kim, C Kang, JY
Citation: Kh. Shim et al., Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter, APPL PHYS A, 72(4), 2001, pp. 471-474
Microstructure of rapidly solidified Al-20Si alloy powders
Authors: Kim, TS Lee, BT Lee, CR Chun, BS
Citation: Ts. Kim et al., Microstructure of rapidly solidified Al-20Si alloy powders, MAT SCI E A, 304, 2001, pp. 617-620
Chemical-vapor-deposition growth and characterization of epitaxial 3C-SiC films on SOI substrates with thin silicon top layers
Authors: Moon, CK Song, HJ Kim, JK Park, JH Jang, SJ Yoo, JB Park, HR Lee, BT
Citation: Ck. Moon et al., Chemical-vapor-deposition growth and characterization of epitaxial 3C-SiC films on SOI substrates with thin silicon top layers, J MATER RES, 16(1), 2001, pp. 24-27
Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
Authors: Kim, JK Je, JH Lee, JW Park, YJ Kim, T Jung, IO Lee, BT Lee, JL
Citation: Jk. Kim et al., Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN, J ELEC MAT, 30(2), 2001, pp. L8-L12
Microstructural characterization of electroconductive Si3N4-TiN composites
Authors: Lee, BT Yoon, YJ Lee, KH
Citation: Bt. Lee et al., Microstructural characterization of electroconductive Si3N4-TiN composites, MATER LETT, 47(1-2), 2001, pp. 71-76
Characterization of the hole capacitance of hydrogenated amorphous siliconmetal-insulator-semiconductor structures
Authors: Park, HR Lee, SH Lee, BT
Citation: Hr. Park et al., Characterization of the hole capacitance of hydrogenated amorphous siliconmetal-insulator-semiconductor structures, J APPL PHYS, 90(12), 2001, pp. 6226-6229
Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots
Authors: Jeong, WG Dapkus, PD Lee, UH Yim, JS Lee, D Lee, BT
Citation: Wg. Jeong et al., Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots, APPL PHYS L, 78(9), 2001, pp. 1171-1173
Fabrication of polymeric large-core waveguides for optical interconnects using a rubber molding process
Authors: Lee, BT Kwon, MS Yoon, JB Shin, SY
Citation: Bt. Lee et al., Fabrication of polymeric large-core waveguides for optical interconnects using a rubber molding process, IEEE PHOTON, 12(1), 2000, pp. 62-64
Microstructural characterization of GPSed-RBSN and GPSed-Si3N4 ceramics
Authors: Lee, BT Yoo, JH Kim, HD
Citation: Bt. Lee et al., Microstructural characterization of GPSed-RBSN and GPSed-Si3N4 ceramics, MATER T JIM, 41(2), 2000, pp. 312-316
High-temperature interfacial reaction of an Al thin film with single-crystal 6H-SiC
Authors: Lee, BT Shin, YS Kim, JH
Citation: Bt. Lee et al., High-temperature interfacial reaction of an Al thin film with single-crystal 6H-SiC, J MATER RES, 15(11), 2000, pp. 2284-2287
A study of the effect of UV laser annealing on a-SiC films for structure ordering
Authors: Cho, NI Kim, YM Hong, C Chae, HB Kim, CK Lee, BT
Citation: Ni. Cho et al., A study of the effect of UV laser annealing on a-SiC films for structure ordering, J KOR PHYS, 37(6), 2000, pp. 998-1002
Microwave dielectric properties of Ba-Nd-Ti-O system doped with metal oxides
Authors: Choi, JH Kim, JH Lee, BT Kim, YM Moon, JH
Citation: Jh. Choi et al., Microwave dielectric properties of Ba-Nd-Ti-O system doped with metal oxides, MATER LETT, 44(1), 2000, pp. 29-34
Microstructural investigation of Ni/Au ohmic contact on p-type GaN
Authors: Kim, JK Je, JH Lee, JL Park, YJ Lee, BT
Citation: Jk. Kim et al., Microstructural investigation of Ni/Au ohmic contact on p-type GaN, J ELCHEM SO, 147(12), 2000, pp. 4645-4651
Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films
Authors: Lee, BT Hwang, CS
Citation: Bt. Lee et Cs. Hwang, Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films, APPL PHYS L, 77(1), 2000, pp. 124-126
Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors
Authors: Lee, BT Kim, DK Moon, CK Kim, JK Seo, YH Nahm, KS Lee, HJ Lee, KW Yu, KS Kim, Y Jang, SJ
Citation: Bt. Lee et al., Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors, J MATER RES, 14(1), 1999, pp. 24-28
Electrical properties of sputtered (Ba,Sr)TiO3 thin films prepared by two-step deposition method
Authors: Lee, BT Kim, WD Lee, KH Lim, HJ Kang, CS Hideki, H Joo, SH Park, HB Yoo, CY Lee, SI Lee, MY
Citation: Bt. Lee et al., Electrical properties of sputtered (Ba,Sr)TiO3 thin films prepared by two-step deposition method, J ELEC MAT, 28(4), 1999, pp. L9-L12
Characterization of heavy deposits on InP mesa sidewalls reactive ion etched using CH4/H-2 plasma
Authors: Lee, BT Park, JS Kim, DK Ahn, JH
Citation: Bt. Lee et al., Characterization of heavy deposits on InP mesa sidewalls reactive ion etched using CH4/H-2 plasma, SEMIC SCI T, 14(4), 1999, pp. 345-349
In situ synthesis of TiN-reinforced Si3N4 matrix composites using Si and sponge Ti powders
Authors: Lee, BT Kim, HD
Citation: Bt. Lee et Hd. Kim, In situ synthesis of TiN-reinforced Si3N4 matrix composites using Si and sponge Ti powders, J MATER SCI, 34(24), 1999, pp. 6169-6176
Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films
Authors: Hwang, CS Lee, BT Kang, CS Lee, KH Cho, HJ Hideki, H Kim, WD Lee, SI Lee, MY
Citation: Cs. Hwang et al., Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films, J APPL PHYS, 85(1), 1999, pp. 287-295
Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor
Authors: Park, JW Park, KS Lee, BT Lee, CH Lee, SD Choi, JB Yoo, KH Kim, J Oh, SC Park, SI Kim, KT Kim, JJ
Citation: Jw. Park et al., Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor, APPL PHYS L, 75(4), 1999, pp. 566-568
Fabrication of a dual-gate-controlled Coulomb blockade transistor based ona silicon-on-insulator structure
Authors: Lee, BT Park, JW Park, KS Lee, CH Paik, SW Lee, SD Choi, JB Min, KS Park, JS Hahn, SY Park, TJ Shin, H Hong, SC Lee, K Kwon, HC Park, SI Kim, KT Yoo, KH
Citation: Bt. Lee et al., Fabrication of a dual-gate-controlled Coulomb blockade transistor based ona silicon-on-insulator structure, SEMIC SCI T, 13(12), 1998, pp. 1463-1467
Risultati: 1-23 |