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Results: 1-16 |
Results: 16
Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, G Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Mikuz, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration, NUCL INST A, 466(2), 2001, pp. 308-326
Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, C Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Miku, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Radicci, V Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration, NUCL INST A, 465(1), 2001, pp. 60-69
Radiation effects in silicon detectors processed on carbon and oxygen-richsubstrates
Authors: Ruzin, A Casse, G Glaser, M Lemeilleur, F Matheson, J Watts, S Zanet, A
Citation: A. Ruzin et al., Radiation effects in silicon detectors processed on carbon and oxygen-richsubstrates, MAT SC S PR, 3(4), 2000, pp. 257-261
Analysis of the transient response of LED-illuminated diodes under heavy radiation damage
Authors: Passeri, D Ciampolini, P Bilei, GM Casse, G Lemeilleur, F
Citation: D. Passeri et al., Analysis of the transient response of LED-illuminated diodes under heavy radiation damage, NUCL INST A, 443(1), 2000, pp. 148-155
Silicon wafer oxygenation from SiO2 layers for radiation hard detectors
Authors: Fonseca, L Lozano, M Campabadal, F Martinez, C Ullan, M Avset, BS Ruzin, A Lemeilleur, F Nossarzewska-Orlowska, E
Citation: L. Fonseca et al., Silicon wafer oxygenation from SiO2 layers for radiation hard detectors, MICROEL REL, 40(4-5), 2000, pp. 791-794
Impact of mesa and planar processes on the radiation hardness of Si detectors
Authors: Casse, G Glaser, M Grigoriev, E Lemeilleur, F Ruzin, A Sopko, B Taffard, A
Citation: G. Casse et al., Impact of mesa and planar processes on the radiation hardness of Si detectors, NUOV CIM A, 112(1-2), 1999, pp. 1-12
Radiation hardness of silicon detectors manufactured on epitaxial materialand FZ bulk enriched with oxygen, carbon, tin and platinum
Authors: Ruzin, A Casse, G Glaser, M Lemeilleur, F Talamonti, R Watts, S Zanet, A
Citation: A. Ruzin et al., Radiation hardness of silicon detectors manufactured on epitaxial materialand FZ bulk enriched with oxygen, carbon, tin and platinum, NUCL PH B-P, 78, 1999, pp. 645-649
Study of charge transport in silicon detectors: Non-irradiated and irradiated
Authors: Leroy, C Roy, P Casse, G Glaser, M Grigoriev, E Lemeilleur, F
Citation: C. Leroy et al., Study of charge transport in silicon detectors: Non-irradiated and irradiated, NUCL PH B-P, 78, 1999, pp. 650-656
Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion
Authors: Casse, G Glaser, M Lemeilleur, F Ruzin, A Wegrzecki, M
Citation: G. Casse et al., Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion, NUCL INST A, 438(2-3), 1999, pp. 429-432
Radiation hardening of silicon detectors
Authors: Lemeilleur, F
Citation: F. Lemeilleur, Radiation hardening of silicon detectors, NUCL INST A, 434(1), 1999, pp. 82-89
Charge transport in non-irradiated and irradiated silicon detectors
Authors: Leroy, C Roy, P Casse, GL Glaser, M Grigoriev, E Lemeilleur, F
Citation: C. Leroy et al., Charge transport in non-irradiated and irradiated silicon detectors, NUCL INST A, 434(1), 1999, pp. 90-102
Scanning of irradiated silicon detectors using alpha particles and low-energy protons
Authors: Casse, G Dolezal, Z Glaser, M Kohout, Z Konicek, J Lemeilleur, F Leroy, C Linhart, V Mares, JJ Pospisil, S Roy, P Sopko, B Sinor, M Svejda, J Vorobel, V Wilhelm, I
Citation: G. Casse et al., Scanning of irradiated silicon detectors using alpha particles and low-energy protons, NUCL INST A, 434(1), 1999, pp. 118-130
New irradiation zones at the CERN-PS
Authors: Glaser, M Durieu, L Lemeilleur, F Tavlet, M Leroy, C Roy, P
Citation: M. Glaser et al., New irradiation zones at the CERN-PS, NUCL INST A, 426(1), 1999, pp. 72-77
Studies of radiation hardness of oxygen enriched silicon detectors
Authors: Ruzin, A Casse, G Glaser, M Lemeilleur, F
Citation: A. Ruzin et al., Studies of radiation hardness of oxygen enriched silicon detectors, NUCL INST A, 426(1), 1999, pp. 94-98
Study of charge transport in non-irradiated and irradiated silicon detectors
Authors: Leroy, C Roy, P Casse, C Glaser, M Grigoriev, E Lemeilleur, F
Citation: C. Leroy et al., Study of charge transport in non-irradiated and irradiated silicon detectors, NUCL INST A, 426(1), 1999, pp. 99-108
Comparison of radiation damage in silicon induced by proton and neutron irradiation
Authors: Ruzin, A Casse, G Glaser, M Zanet, A Lemeilleur, F Watts, S
Citation: A. Ruzin et al., Comparison of radiation damage in silicon induced by proton and neutron irradiation, IEEE NUCL S, 46(5), 1999, pp. 1310-1313
Risultati: 1-16 |