AAAAAA

   
Results: 1-9 |
Results: 9
The effect of pulsed magnetic fields on thin Cd0.5Zn0.5S layers
Authors: Levin, MN Semenov, VN Meteleva, YV
Citation: Mn. Levin et al., The effect of pulsed magnetic fields on thin Cd0.5Zn0.5S layers, TECH PHYS L, 27(5), 2001, pp. 411-413
Pulsed magnetic field processing of silicon substrates prior to thermal spray film deposition
Authors: Levin, MN Semenov, VN Naumov, AV
Citation: Mn. Levin et al., Pulsed magnetic field processing of silicon substrates prior to thermal spray film deposition, TECH PHYS L, 27(4), 2001, pp. 279-280
Charge distribution in a MIS insulator from spectral characteristics of photoemission current
Authors: Levin, MN Bormontov, EN Volkov, OV Ostroukhov, SS Tatarintsev, AV
Citation: Mn. Levin et al., Charge distribution in a MIS insulator from spectral characteristics of photoemission current, TECH PHYS, 46(3), 2001, pp. 316-321
Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters
Authors: Bormontov, EN Levin, MN Vyalykh, SA Borisov, SN
Citation: En. Bormontov et al., Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters, TECH PHYS, 46(2), 2001, pp. 192-197
Effect of pulsed magnetic field treatment on the crystallization and melting of organosilicon polymeric materials
Authors: Levin, MN Matveev, NN
Citation: Mn. Levin et Nn. Matveev, Effect of pulsed magnetic field treatment on the crystallization and melting of organosilicon polymeric materials, RUSS J PH C, 75(10), 2001, pp. 1728-1732
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages
Authors: Levin, MN Gitlin, VR Kadmensky, SG Ostrouhov, SS Pershenkov, VS
Citation: Mn. Levin et al., X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages, MICROEL REL, 41(2), 2001, pp. 185-191
Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects
Authors: Bormontov, EN Levin, MN Nakhmanson, RS
Citation: En. Bormontov et al., Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects, SOL ST ELEC, 44(8), 2000, pp. 1441-1446
Transient spectroscopy of surface states in a constant subthreshold current mode for MIS transistors
Authors: Levin, MN Bormontov, EN Tatarintsev, AV Gitlin, VR
Citation: Mn. Levin et al., Transient spectroscopy of surface states in a constant subthreshold current mode for MIS transistors, TECH PHYS, 44(8), 1999, pp. 923-927
Magnetic-field induced generation of A-like centers in Cz-Si crystals
Authors: Levin, MN Zon, BA
Citation: Mn. Levin et Ba. Zon, Magnetic-field induced generation of A-like centers in Cz-Si crystals, PHYS LETT A, 260(5), 1999, pp. 386-390
Risultati: 1-9 |