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Results: 1-19 |
Results: 19
High-quality ZnO/GaN/alpha-Al2O3 heteroepitaxial structures grown by CVD
Authors: Ataev, BM Kamilov, IK Lundin, WV Mamedov, VV Omaev, AK Shakhshaev, SMO
Citation: Bm. Ataev et al., High-quality ZnO/GaN/alpha-Al2O3 heteroepitaxial structures grown by CVD, TECH PHYS L, 27(1), 2001, pp. 55-57
Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/alpha-Al2O3
Authors: Ataev, BM Lundin, WV Mamedov, VV Bagamadova, AM Zavarin, EE
Citation: Bm. Ataev et al., Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/alpha-Al2O3, J PHYS-COND, 13(9), 2001, pp. L211-L214
Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
Authors: Sakharov, AV Usikov, AS Lundin, WV Tsatsulnikov, AF Tu, RC Yin, SB Chi, JY
Citation: Av. Sakharov et al., Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences, PHYS ST S-B, 228(1), 2001, pp. 95-98
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire, SOL ST ELEC, 45(2), 2001, pp. 255-259
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Musikhin, YG Kartashova, AP Usikov, AS Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Hahn, E Neubauer, B Rosenauer, A Litvinov, D Gerthsen, D Plaut, AC Hoffmann, AA Bimberg, D
Citation: Il. Krestnikov et al., Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots, SEMICONDUCT, 34(4), 2000, pp. 481-487
Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire
Authors: Usikov, AS Tret'yakov, VV Bobyl', AV Kyutt, RN Lundin, WV Pushnyi, BV Shmidt, NM
Citation: As. Usikov et al., Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire, SEMICONDUCT, 34(11), 2000, pp. 1248-1254
Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
Authors: Tsatsul'nikov, AF Krestnikov, IL Lundin, WV Sakharov, AV Kartashova, AP Usikov, AS Alferov, ZI Ledentsov, NN Strittmatter, A Hoffmann, A Bimberg, D Soshnikov, IP Litvinov, D Rosenauer, A Gerthsen, D Plaut, A
Citation: Af. Tsatsul'Nikov et al., Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition, SEMIC SCI T, 15(7), 2000, pp. 766-769
Quantum dots formed by ultrathin insertions in wide-gap matrices
Authors: Ledentsov, NN Krestnikov, IL Strassburg, M Engelhardt, R Rodt, S Heitz, R Pohl, UW Hoffmann, A Bimberg, D Sakharov, AV Lundin, WV Usikov, AS Alferov, ZI Litvinov, D Rosenauer, A Gerthsen, D
Citation: Nn. Ledentsov et al., Quantum dots formed by ultrathin insertions in wide-gap matrices, THIN SOL FI, 367(1-2), 2000, pp. 40-47
Effects of proton implantation on electrical and recombination properties of n-GaN
Authors: Polyakov, AY Usikov, AS Theys, B Smirnov, NB Govorkov, AV Jomard, F Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Lasing in vertical direction in structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Usikov, AS Tsatsulnikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Gerthsen, D Plaut, AC Holst, J Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96
Effect of Si doping on structural, photoluminescence and electrical properties of GaN
Authors: Shmidt, NM Lebedev, AV Lundin, WV Pushnyi, BV Ratnikov, VV Shubina, TV Tsatsul'nikov, AA Usikov, AS Pozina, G Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsulnikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Holst, J Hoffmann, A Bimberg, D Soshnikov, IP Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440
Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature
Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsulnikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature, PHYS ST S-B, 216(1), 1999, pp. 511-515
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides
Authors: Shmidt, NM Emtsev, VV Kryzhanovsky, AS Kyutt, RN Lundin, WV Poloskin, DS Ratnikov, VV Sakharov, AV Titkov, AN Usikov, AS Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
Deep centers in AlGaN-based light emitting diode structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Mil'vidskii, MG Usikov, AS Pushnyi, BV Lundin, WV
Citation: Ay. Polyakov et al., Deep centers in AlGaN-based light emitting diode structures, SOL ST ELEC, 43(10), 1999, pp. 1929-1936
Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates
Authors: Lundin, WV Usikov, AS Sakharov, AV Tretyakov, VV Poloskin, DV Ledentsov, NN Hoffmann, A
Citation: Wv. Lundin et al., Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates, PHYS ST S-A, 176(1), 1999, pp. 379-384
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsul'nikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser, APPL PHYS L, 75(9), 1999, pp. 1192-1194
Surface-mode lasing from stacked InGaN insertions in a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsul'nikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Av. Sakharov et al., Surface-mode lasing from stacked InGaN insertions in a GaN matrix, APPL PHYS L, 74(26), 1999, pp. 3921-3923
Risultati: 1-19 |