AAAAAA

   
Results: 1-10 |
Results: 10
Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures
Authors: Lysenko, VS Tyagulskii, IP Osiyuk, IN Nazarov, AN Vovk, YN Gomenyuk, YV Terukov, EI Kon'kov, OI
Citation: Vs. Lysenko et al., Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures, SEMICONDUCT, 35(6), 2001, pp. 621-626
Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects
Authors: Nazarov, AN Pinchuk, VM Yanchuk, TV Lysenko, VS Vovk, YN Rangan, S Ashok, S Kudoyarova, V Terukov, EI
Citation: An. Nazarov et al., Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects, INT J HYD E, 26(5), 2001, pp. 521-526
Thermally activated processes in the buried oxide of SIMOX SOI structures and devices
Authors: Lysenko, VS Nazarov, AN Kilchytska, VI Osiyuk, IN Tyagulski, IP Gomeniuk, YV Barchuk, IP
Citation: Vs. Lysenko et al., Thermally activated processes in the buried oxide of SIMOX SOI structures and devices, SOL ST ELEC, 45(4), 2001, pp. 575-584
Carrier transport in amorphous SiC/crystalline silicon heterojunctions
Authors: Nazarov, AN Vovk, YN Lysenko, VS Turchanikov, VI Scryshevskii, VA Ashok, S
Citation: An. Nazarov et al., Carrier transport in amorphous SiC/crystalline silicon heterojunctions, J APPL PHYS, 89(8), 2001, pp. 4422-4428
Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique
Authors: Olafsson, HO Sveinbjornsson, EO Rudenko, TE Tyagulski, IP Osiyuk, IN Lysenko, VS
Citation: Ho. Olafsson et al., Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique, APPL PHYS L, 79(24), 2001, pp. 4034-4036
Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs
Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 735-738
Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors
Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors, MICROEL REL, 40(4-5), 2000, pp. 799-802
Macroscopic dielectric response of the metallic particles embedded in hostdielectric medium
Authors: Grechko, LG Whites, KW Pustovit, VN Lysenko, VS
Citation: Lg. Grechko et al., Macroscopic dielectric response of the metallic particles embedded in hostdielectric medium, MICROEL REL, 40(4-5), 2000, pp. 893-895
Electrical characterization of the amorphous SiC-pSi structure
Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN Mikhnov, AK
Citation: Vs. Lysenko et al., Electrical characterization of the amorphous SiC-pSi structure, MICROEL ENG, 48(1-4), 1999, pp. 265-268
Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide
Authors: Nazarov, AN Barchuk, IP Lysenko, VS Colinge, JP
Citation: An. Nazarov et al., Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide, MICROEL ENG, 48(1-4), 1999, pp. 379-382
Risultati: 1-10 |