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Nazarov, AN
Pinchuk, VM
Yanchuk, TV
Lysenko, VS
Vovk, YN
Rangan, S
Ashok, S
Kudoyarova, V
Terukov, EI
Citation: An. Nazarov et al., Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects, INT J HYD E, 26(5), 2001, pp. 521-526
Authors:
Lysenko, VS
Nazarov, AN
Kilchytska, VI
Osiyuk, IN
Tyagulski, IP
Gomeniuk, YV
Barchuk, IP
Citation: Vs. Lysenko et al., Thermally activated processes in the buried oxide of SIMOX SOI structures and devices, SOL ST ELEC, 45(4), 2001, pp. 575-584
Authors:
Olafsson, HO
Sveinbjornsson, EO
Rudenko, TE
Tyagulski, IP
Osiyuk, IN
Lysenko, VS
Citation: Ho. Olafsson et al., Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique, APPL PHYS L, 79(24), 2001, pp. 4034-4036
Authors:
Lysenko, VS
Tyagulski, IP
Gomeniuk, YV
Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 735-738
Authors:
Lysenko, VS
Tyagulski, IP
Gomeniuk, YV
Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors, MICROEL REL, 40(4-5), 2000, pp. 799-802
Authors:
Grechko, LG
Whites, KW
Pustovit, VN
Lysenko, VS
Citation: Lg. Grechko et al., Macroscopic dielectric response of the metallic particles embedded in hostdielectric medium, MICROEL REL, 40(4-5), 2000, pp. 893-895
Authors:
Nazarov, AN
Barchuk, IP
Lysenko, VS
Colinge, JP
Citation: An. Nazarov et al., Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide, MICROEL ENG, 48(1-4), 1999, pp. 379-382