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Results: 1-25/68
Authors:
BACHLI A
NICOLET MA
BAUD L
JAUSSAUD C
MADAR R
Citation: A. Bachli et al., NICKEL FILM ON (001)SIC - THERMALLY-INDUCED REACTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 11-23
Authors:
DHAHRI E
FOURATI N
GUIDARA K
SENATEUR JP
MADAR R
Citation: E. Dhahri et al., MOSSBAUER SPECTROMETRY OF THE SUBSTITUTION ORDER IN THE SOLID-SOLUTIONS GD-2(FE1-X)(12)P-7(M = CO, NI), Physica status solidi. b, Basic research, 208(1), 1998, pp. 157-166
Authors:
MADAR R
ANIKIN M
CHOUROU K
LABEAU M
PONS M
BLANQUET E
DEDULLE JM
BERNARD C
MILITA S
BARUCHEL J
Citation: R. Madar et al., DEFECTS FORMATION IN SUBLIMATION GROWN 6H-SIC SINGLE-CRYSTAL BOULES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1249-1261
Authors:
ELLISON A
RADAMSON H
TUOMINEN M
MILITA S
HALLIN C
HENRY A
KORDINA O
TUOMI T
YAKIMOVA R
MADAR R
JANZEN E
Citation: A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Authors:
PERRIER C
KREISEL J
VINCENT H
CHAIXPLUCHERY O
MADAR R
Citation: C. Perrier et al., SYNTHESIS, CRYSTAL-STRUCTURE, PHYSICAL-PROPERTIES AND RAMAN-SPECTROSCOPY OF TRANSITION-METAL PHOSPHO-SILICIDES MSIXPY (M = FE, CO, RU, RH, PD, OS, IR, PT), Journal of alloys and compounds, 262, 1997, pp. 71-77
Authors:
MEYER B
GOTTLIEB U
LABORDE O
YANG HS
LASJAUNIAS JC
SULPICE A
MADAR R
Citation: B. Meyer et al., INTRINSIC-PROPERTIES OF NISI, Journal of alloys and compounds, 262, 1997, pp. 235-237
Authors:
ANIKIN M
MADAR R
Citation: M. Anikin et R. Madar, TEMPERATURE-GRADIENT CONTROLLED SIC CRYSTAL-GROWTH, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 278-286
Authors:
PONS M
BLANQUET E
DEDULLE JM
MADAR R
BERNARD C
Citation: M. Pons et al., DIFFERENT MACROSCOPIC APPROACHES TO THE MODELING OF THE SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 308-312
Authors:
PONS M
ANIKIN M
DEDULLE JM
MADAR R
CHOUROU K
BLANQUET E
BERNARD C
Citation: M. Pons et al., MACROSCOPIC MODELING OF SILICON-CARBIDE SUBLIMATION - TOWARD A MICROSCOPIC MODELING OF DEFECT FORMATION, Surface & coatings technology, 94-5(1-3), 1997, pp. 279-284
Authors:
GILLES S
BOURHILA N
IKEDA S
BERNARD C
MADAR R
Citation: S. Gilles et al., DEPOSITION OF (TI,AL)N THIN-FILMS BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC PREDICTIONS AND EXPERIMENTAL RESULTS, Surface & coatings technology, 94-5(1-3), 1997, pp. 285-290
Authors:
MARCADAL C
RICHARD E
TORRES J
PALLEAU J
MADAR R
Citation: C. Marcadal et al., CVD PROCESS FOR COPPER INTERCONNECTION, Microelectronic engineering, 37-8(1-4), 1997, pp. 97-103
Authors:
BLANQUET E
DUTRON AM
GHETTA V
BERNARD C
MADAR R
Citation: E. Blanquet et al., EVALUATION OF LPCVD ME-SI-N (ME = TA, TI, W, RE) DIFFUSION-BARRIERS FOR CU METALLIZATIONS, Microelectronic engineering, 37-8(1-4), 1997, pp. 189-195
Authors:
MEYER B
GOTTLIEB U
LABORDE O
YANG H
LASJAUNIAS JC
SULPICE A
MADAR R
Citation: B. Meyer et al., SOME ELECTRONIC-PROPERTIES OF SINGLE-CRYSTALLINE NISI, Microelectronic engineering, 37-8(1-4), 1997, pp. 523-527
Authors:
CHAIXPLUCHERY O
LUCAZEAU G
AUBRYFORTUNA V
MEYER F
MADAR R
Citation: O. Chaixpluchery et al., RAMAN-STUDY OF TUNGSTEN DISILICIDE FORMATION IN THIN-FILMS, Microelectronic engineering, 37-8(1-4), 1997, pp. 543-550
Authors:
CHAIXPLUCHERY O
BOSSY J
SCHOBER H
GOTTLIEB U
LABORDE O
MADAR R
Citation: O. Chaixpluchery et al., LATTICE-DYNAMICS OF TRANSITION-METAL DISILICIDES, Microelectronic engineering, 37-8(1-4), 1997, pp. 551-557
Authors:
BOURHILA N
TORRES J
PALLEAU J
BERNARD C
MADAR R
Citation: N. Bourhila et al., COPPER LPCVD FOR ADVANCED TECHNOLOGY, Microelectronic engineering, 33(1-4), 1997, pp. 25-30
Authors:
MNASRI T
DHAHRI E
FOURATI N
CHEIKHROUHOU A
MADAR R
Citation: T. Mnasri et al., EFFECT OF STRONTIUM-TITANATE SRTIO3 ON THE SUPERCONDUCTOR OXIDE YBA2CU3O7-DELTA, Annales de chimie, 22(3-4), 1997, pp. 259-264
Authors:
BOUDAYA C
DHAHRI E
CHEIKHROUHOU A
MADAR R
Citation: C. Boudaya et al., SUPERCONDUCTOR-MGO SUBSTRATE INTERACTIONS OF Y-BA-CU OXIDE POWDERS, Phase transitions, 60(4), 1997, pp. 247-260
Authors:
PERRIER C
KIRSCHEN M
VINCENT H
GOTTLIEB U
CHENEVIER B
MADAR R
Citation: C. Perrier et al., SYNTHESIS AND CRYSTAL-STRUCTURES OF 2 NEW PLATINUM PHOSPHOSILICIDES, PTSI3P2 AND PTSI2P2 - ELECTRICAL-RESISTIVITY OF PTSI3P2, Journal of solid state chemistry, 133(2), 1997, pp. 473-478
Authors:
KREISEL J
CHAIXPLUCHERY O
GENET F
LUCAZEAU G
VINCENT H
MADAR R
Citation: J. Kreisel et al., A RAMAN-STUDY OF NEW PHOSPHO-SILICIDES - RHSI3P3 AND IRSI3P3, Journal of solid state chemistry, 128(1), 1997, pp. 142-149
Authors:
TORRES J
MERMET JL
MADAR R
CREAN G
GESSNER T
BERTZ A
HASSE W
PLOTNER M
BINDER F
SAVE D
Citation: J. Torres et al., COPPER-BASED METALLIZATION FOR ULSI CIRCUITS, Microelectronic engineering, 34(1), 1996, pp. 119-122
Authors:
AFFRONTE M
LABORDE O
LASJAUNIAS JC
GOTTLIEB U
MADAR R
Citation: M. Affronte et al., ELECTRONIC-PROPERTIES OF TISI2 SINGLE-CRYSTALS AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 54(11), 1996, pp. 7799-7806
Authors:
ROUCH H
PONS M
BENEZECH A
BERNARD C
MADAR R
Citation: H. Rouch et al., THERMODYNAMIC-EQUILIBRIUM AND MASS-TRANSPORT COUPLED MODELING OF THE CHEMICAL-VAPOR-DEPOSITION PROCESS, Thin solid films, 282(1-2), 1996, pp. 64-67
Authors:
LABORDE O
SULPICE A
GOTTLIEB U
MADAR R
Citation: O. Laborde et al., MAGNETIC-SUSCEPTIBILITY OF SEMICONDUCTING RESI1.75, Solid state communications, 97(5), 1996, pp. 323-327
Authors:
BALKASHIN OP
JANSEN AGM
GOTTLIEB U
LABORDE O
MADAR R
Citation: Op. Balkashin et al., ELECTRON-PHONON INTERACTION SPECTRA OF TASI2, NBSI2 AND VSI2, Solid state communications, 100(5), 1996, pp. 293-296