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Results: 1-25/31
Authors:
NEOGI SS
VENABLES D
NA ZY
MAHER DM
Citation: Ss. Neogi et al., FACTORS AFFECTING 2-DIMENSIONAL DOPANT PROFILES OBTAINED BY TRANSMISSION ELECTRON-MICROSCOPY OF ETCHED P-N-JUNCTIONS IN SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 471-475
Authors:
LI VZQ
MIRABEDINI MR
HORNUNG BE
HEINISCH HH
XU M
BATCHELOR D
MAHER DM
WORTMAN JJ
KUEHN RT
Citation: Vzq. Li et al., STRUCTURE AND PROPERTIES OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SIO2 USING SI2H6, GEH4, AND B2H6 GASES, Journal of applied physics, 83(10), 1998, pp. 5469-5476
Authors:
SWAMINATHAN S
JONES IP
MAHER DM
JOHNSON AWS
FRASER HL
Citation: S. Swaminathan et al., EFFECTS OF DEBYE-WALLER FACTORS AND COMPOSITIONAL UNCERTAINTIES ON THE 200 STRUCTURE FACTOR REFINEMENT IN GAMMA-TIAL, Philosophical magazine letters, 75(5), 1997, pp. 261-270
Authors:
SWAMINATHAN S
ALTYNOV S
JONES IP
ZALUZEC NJ
MAHER DM
FRASER HL
Citation: S. Swaminathan et al., PRECISE AND ACCURATE REFINEMENTS OF THE 220 STRUCTURE FACTOR FOR SILICON BY THE SYSTEMATIC-ROW CBED METHOD, Ultramicroscopy, 69(3), 1997, pp. 169-183
Authors:
NEOGI SS
VENABLES D
MA ZY
MAHER DM
TAYLOR M
CORCORAN S
Citation: Ss. Neogi et al., MAPPING 2-DIMENSIONAL ARSENIC DISTRIBUTIONS IN SILICON USING DOPANT-SELECTIVE CHEMICAL ETCHING TECHNIQUE, Journal of applied physics, 82(11), 1997, pp. 5811-5815
Authors:
ONEIL PA
OZTURK MC
VIOLETTE KE
BATCHELOR D
CHRISTENSEN K
MAHER DM
Citation: Pa. Oneil et al., OPTIMIZATION OF PROCESS CONDITIONS FOR SELECTIVE SILICON EPITAXY USING DISILANE, HYDROGEN, AND CHLORINE, Journal of the Electrochemical Society, 144(9), 1997, pp. 3309-3315
Authors:
LI VZQ
MIRABEDINI MR
KUEHN RT
WORTMAN JJ
OZTURK MC
BATCHELOR D
CHRISTENSEN K
MAHER DM
Citation: Vzq. Li et al., RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 71(23), 1997, pp. 3388-3390
Authors:
HU YZ
DIEHL DJ
ZHAO CY
WANG CL
LIU Q
IRENE EA
CHRISTENSEN KN
VENABLE D
MAHER DM
Citation: Yz. Hu et al., REAL-TIME INVESTIGATION OF NUCLEATION AND GROWTH OF SILICON ON SILICON DIOXIDE USING SILANE AND DISILANE IN A RAPID THERMAL-PROCESSING SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 744-750
Authors:
VENABLES D
MAHER DM
Citation: D. Venables et Dm. Maher, QUANTITATIVE 2-DIMENSIONAL DOPANT PROFILES OBTAINED DIRECTLY FROM SECONDARY-ELECTRON IMAGES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 421-425
Authors:
CHO SM
CHRISTENSEN C
LUCOVSKY G
MAHER DM
Citation: Sm. Cho et al., DEPOSITION OF MICROCRYSTALLINE HYDROGENATED SILICON,GERMANIUM ALLOY (MU-C-SIXGE1-X-H) FILMS BY REACTIVE MAGNETRON SPUTTERING (RMS), Journal of non-crystalline solids, 200, 1996, pp. 587-591
Authors:
VIOLETTE KE
OZTURK MC
CHRISTENSEN KN
MAHER DM
Citation: Ke. Violette et al., SILICON NUCLEATION AND FILM EVOLUTION ON SILICON DIOXIDE USING DISILANE - RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF VERY SMOOTH SILICON ATHIGH DEPOSITION RATES, Journal of the Electrochemical Society, 143(2), 1996, pp. 649-657
Authors:
VIOLETTE KE
ONEIL PA
OZTURK MC
CHRISTENSEN K
MAHER DM
Citation: Ke. Violette et al., ON THE ROLE OF CHLORINE IN SELECTIVE SILICON EPITAXY BY CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 143(10), 1996, pp. 3290-3296
Authors:
AGARWAL A
CHRISTENSEN K
VENABLES D
MAHER DM
ROZGONYI GA
Citation: A. Agarwal et al., OXYGEN GETTERING AND PRECIPITATION AT MEV SI-IMPLANTATION INDUCED DAMAGE IN SILICON( ION), Applied physics letters, 69(25), 1996, pp. 3899-3901
Authors:
BAN IH
OZTURK MC
CHRISTENSEN K
MAHER DM
Citation: Ih. Ban et al., EFFECTS OF CARBON IMPLANTATION ON GENERATION LIFETIME IN SILICON, Applied physics letters, 68(4), 1996, pp. 499-501
Authors:
VIOLETTE KE
ONEIL PA
OZTURK MC
CHRISTENSEN K
MAHER DM
Citation: Ke. Violette et al., LOW-TEMPERATURE SELECTIVE SILICON EPITAXY BY ULTRA-HIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING SI2H6, H-2 AND CL-2, Applied physics letters, 68(1), 1996, pp. 66-68
Authors:
BUAUD PP
HU YZ
SPANOS L
IRENE EA
CHRISTENSEN KN
VENABLES D
MAHER DM
Citation: Pp. Buaud et al., A STUDY OF SILICON EPITAXIAL-GROWTH ON SILICON SUBSTRATES EXPOSED TO AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1442-1446
Authors:
LI M
HU YZ
IRENE EA
LIU L
CHRISTENSEN KN
MAHER DM
Citation: M. Li et al., ELLIPSOMETRY STUDY OF THE NUCLEATION OF SI EPITAXY BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 105-110
Authors:
ASHBURN SP
OZTURK MC
HARRIS G
MAHER DM
Citation: Sp. Ashburn et al., A STUDY OF SELF-ALIGNED FORMATION OF C54 TI(SI1-YGEY)(2) TO P(+) AND N(+) SI0.7GE0.3 ALLOYS USING RAPID THERMAL ANNEALING, Journal of electronic materials, 24(6), 1995, pp. 773-780
Authors:
VIOLETTE KE
OZTURK MC
CHRISTENSEN K
MAHER DM
Citation: Ke. Violette et al., SMOOTH AMORPHOUS-SILICON DEPOSITION ON SILICON DIOXIDE WITH HIGH DEPOSITION RATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING DISILANE, Materials letters, 25(5-6), 1995, pp. 305-309
Authors:
AUGUSTINE BH
IRENE EA
HE YJ
PRICE KJ
MCNEIL LE
CHRISTENSEN KN
MAHER DM
Citation: Bh. Augustine et al., VISIBLE-LIGHT EMISSION FROM THIN-FILMS CONTAINING SI, O, N, AND H, Journal of applied physics, 78(6), 1995, pp. 4020-4030
Authors:
SANGANERIA MK
OZTURK MC
HARRIS G
VIOLETTE KE
BAN I
LEE CA
MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ONTO (100)SILICON .1. THE INFLUENCE OF PREBAKE ON (EPITAXY SUBSTRATE) INTERFACIAL OXYGEN AND CARBON LEVELS, Journal of the Electrochemical Society, 142(11), 1995, pp. 3961-3969
Authors:
SANGANERIA MK
OZTURK MC
HARRIS G
VIOLETTE KE
LEE CA
MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ON (100)SILICON .2. CARBON INCORPORATION INTO LAYERS AND AT INTERFACES OF MULTILAYER STRUCTURES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3970-3974
Authors:
SANGANERIA MK
VIOLETTE KE
OZTURK MC
HARRIS G
MAHER DM
Citation: Mk. Sanganeria et al., BORON INCORPORATION IN EPITAXIAL SILICON USING SI2H6 AND B2H6 IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of the Electrochemical Society, 142(1), 1995, pp. 285-289
Authors:
SANGANERIA MK
OZTURK MC
VIOLETTE KE
HARRIS G
LEE CA
MAHER DM
Citation: Mk. Sanganeria et al., HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Applied physics letters, 66(10), 1995, pp. 1255-1257
Authors:
MAHER DM
ZHANG B
Citation: Dm. Maher et B. Zhang, CHARACTERIZATION OF STRUCTURE DOPANT BEHAVIOR BY ELECTRON-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 347-352