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Results: 26-36/36
Authors:
MEEHAN A
OSULLIVAN P
HURLEY P
MATHEWSON A
Citation: A. Meehan et al., HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL, Quality and reliability engineering international, 11(4), 1995, pp. 269-272
Authors:
HURLEY PK
WALL L
MORAN S
MATHEWSON A
Citation: Pk. Hurley et al., CAPACITANCE-VOLTAGE CHARACTERISTICS OF HEAVILY-DOPED SILICON INSULATOR SILICON CAPACITORS, Semiconductor science and technology, 10(2), 1995, pp. 190-196
Authors:
WRIXON R
TWOMEY A
OSULLIVAN P
MATHEWSON A
Citation: R. Wrixon et al., ENHANCED THICKNESS UNIFORMITY AND ELECTRICAL PERFORMANCE OF ULTRATHINDIELECTRICS GROWN BY RTP USING VARIOUS N2O-OXYNITRIDATION PROCESSES, Journal of the Electrochemical Society, 142(8), 1995, pp. 2738-2742
Authors:
POWER JA
DONNELLAN B
MATHEWSON A
LANE WA
Citation: Ja. Power et al., RELATING STATISTICAL OSFET MODEL PARAMETER VARIABILITIES TO IC MANUFACTURING PROCESS FLUCTUATIONS ENABLING REALISTIC WORST-CASE DESIGN, IEEE transactions on semiconductor manufacturing, 7(3), 1994, pp. 306-318
Authors:
MATHEWSON A
OSULLIVAN P
Citation: A. Mathewson et P. Osullivan, THE 5TH ESPRIT WORKSHOP ON THE CHARACTERIZATION AND GROWTH OF THIN DIELECTRICS IN MICROELECTRONICS, Microelectronics, 25(7), 1994, pp. 21-22
Authors:
MEEHAN A
OSULLIVAN P
HURLEY P
MATHEWSON A
Citation: A. Meehan et al., EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS, Microelectronics, 25(7), 1994, pp. 463-467
Authors:
CONCANNON A
MATHEWSON A
PICCININI F
MEI GL
BEZ R
LOMBARDI C
Citation: A. Concannon et al., A MODEL FOR HOT-ELECTRON AND HOT-HOLE INJECTION IN FLASH EEPROM PROGRAMMING, Microelectronics, 25(7), 1994, pp. 469-473
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
MASON B
BEECH C
Citation: A. Martin et al., EVALUATION OF THE LIFETIME AND FAILURE PROBABILITY FOR INTER-POLY OXIDES FROM RVS MEASUREMENTS, Microelectronics, 25(7), 1994, pp. 553-557
Authors:
MATHEWSON A
Citation: A. Mathewson, ONTARIO WOODLOTS - GOING ... GOING, Forestry Chronicle, 70(3), 1994, pp. 291-293
Authors:
OSULLIVAN P
MATHEWSON A
Citation: P. Osullivan et A. Mathewson, IMPLICATIONS OF A LOCALIZED DEFECT MODEL FOR WAFER LEVEL RELIABILITY MEASUREMENTS OF THIN DIELECTRICS, Microelectronics and reliability, 33(11-12), 1993, pp. 1679-1685
Authors:
CONCANNON A
KEENEY S
MATHEWSON A
BEZ R
LOMBARDI C
Citation: A. Concannon et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1258-1262