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Results: 1-18 |
Results: 18
TEMPERATURE INDEPENDENT CURRENT BLOCKING DUE TO HOT-ELECTRONS IN INALAS INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH COMPOSITE COLLECTORS/
Authors: MCKINNON WR DRIAD R MCALISTER SP RENAUD A WASILEWSKI ZR
Citation: Wr. Mckinnon et al., TEMPERATURE INDEPENDENT CURRENT BLOCKING DUE TO HOT-ELECTRONS IN INALAS INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH COMPOSITE COLLECTORS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 846-849
HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION
Authors: PAWLOWICZ C TARR NG BERNDT LP WILLIAMS RL LANDHEER D XU DX ABID R MCALISTER SP
Citation: C. Pawlowicz et al., HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 864-867
PASSIVATION OF INGAAS SURFACES AND INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS BY SULFUR TREATMENT/
Authors: DRIAD R LU ZH CHARBONNEAU S MCKINNON WR LAFRAMBOISE S POOLE PJ MCALISTER SP
Citation: R. Driad et al., PASSIVATION OF INGAAS SURFACES AND INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS BY SULFUR TREATMENT/, Applied physics letters, 73(5), 1998, pp. 665-667
USE OF DIPOLE DOPING TO SUPPRESS SWITCHING IN INDIUM-PHOSPHIDE DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: MCALISTER SP MCKINNON WR DRIAD R RENAUD AP
Citation: Sp. Mcalister et al., USE OF DIPOLE DOPING TO SUPPRESS SWITCHING IN INDIUM-PHOSPHIDE DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS, Journal of applied physics, 82(10), 1997, pp. 5231-5234
IMPROVEMENT OF F(T) BY DIPOLE DOPING AT THE COLLECTOR HETEROJUNCTION IN INP DOUBLE HBTS
Authors: MCALISTER SP MCKINNON WR DRIAD R
Citation: Sp. Mcalister et al., IMPROVEMENT OF F(T) BY DIPOLE DOPING AT THE COLLECTOR HETEROJUNCTION IN INP DOUBLE HBTS, Electronics Letters, 33(11), 1997, pp. 991-993
CURRENT BLOCKING IN INP INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS/
Authors: MCKINNON WR MCALISTER SP ABID Z GUZZO EE
Citation: Wr. Mckinnon et al., CURRENT BLOCKING IN INP INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS/, Journal of applied physics, 79(5), 1996, pp. 2771-2778
CURRENT DISTRIBUTIONS IN SILICON-GERMANIUM P-MOSFETS
Authors: MCALISTER SP MCKINNON WR BRADFORD T
Citation: Sp. Mcalister et al., CURRENT DISTRIBUTIONS IN SILICON-GERMANIUM P-MOSFETS, Canadian journal of physics, 74, 1996, pp. 177-181
THE USE OF MULTIPLE-GATED MOSFETS IN A SIMPLE APPLICATION
Authors: BRADFORD T MCALISTER SP
Citation: T. Bradford et Sp. Mcalister, THE USE OF MULTIPLE-GATED MOSFETS IN A SIMPLE APPLICATION, Canadian journal of physics, 74, 1996, pp. 182-185
A COMPARISON OF THE DC AND RF CHARACTERISTICS OF SINGLE AND DOUBLE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MCKINNON WR MCALISTER SP ABID Z GUZZO EE LAFRAMBOISE S
Citation: Wr. Mckinnon et al., A COMPARISON OF THE DC AND RF CHARACTERISTICS OF SINGLE AND DOUBLE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Canadian journal of physics, 74, 1996, pp. 239-242
ON THE DESIGN OF COMPOSITE-COLLECTOR HBTS
Authors: GHODSIAN B PULFREY DL ABID Z MCALISTER SP
Citation: B. Ghodsian et al., ON THE DESIGN OF COMPOSITE-COLLECTOR HBTS, Solid-state electronics, 38(6), 1995, pp. 1275-1278
NUMERICAL DRIFT-DIFFUSION SIMULATION OF AUGER HOT-ELECTRON TRANSPORT IN INGAASP INP DOUBLE-HETEROJUNCTION LASER-DIODES
Authors: CHAI KW LI ZM MCALISTER SP SIMMONS JG
Citation: Kw. Chai et al., NUMERICAL DRIFT-DIFFUSION SIMULATION OF AUGER HOT-ELECTRON TRANSPORT IN INGAASP INP DOUBLE-HETEROJUNCTION LASER-DIODES, International journal of numerical modelling, 7(4), 1994, pp. 267-281
TEMPERATURE-DEPENDENT DC CHARACTERISTICS OF AN INP INGAAS INGAASP HBT
Authors: ABID Z MCALISTER SP MCKINNON WR GUZZO EE
Citation: Z. Abid et al., TEMPERATURE-DEPENDENT DC CHARACTERISTICS OF AN INP INGAAS INGAASP HBT, IEEE electron device letters, 15(5), 1994, pp. 178-180
A COMPARISON OF SOME APPROXIMATIONS FOR THE FERMI-DIRAC INTEGRAL OF ORDER-1 2/
Authors: WONG SA MCALISTER SP LI ZM
Citation: Sa. Wong et al., A COMPARISON OF SOME APPROXIMATIONS FOR THE FERMI-DIRAC INTEGRAL OF ORDER-1 2/, Solid-state electronics, 37(1), 1994, pp. 61-64
HYSTERESIS IN THE SWITCHING OF HOT-ELECTRONS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MCALISTER SP MCKINNON WR ABID Z GUZZO EE
Citation: Sp. Mcalister et al., HYSTERESIS IN THE SWITCHING OF HOT-ELECTRONS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(4), 1994, pp. 2559-2561
AN APPROXIMATE K-CENTER-DOT-P THEORY FOR OPTICAL GAIN OF STRAINED INGAASP QUANTUM-WELL LASERS
Authors: LI ZM DION M ZOU Y WANG J DAVIES M MCALISTER SP
Citation: Zm. Li et al., AN APPROXIMATE K-CENTER-DOT-P THEORY FOR OPTICAL GAIN OF STRAINED INGAASP QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 538-546
DC AND TEMPERATURE-DEPENDENT CHARACTERISTICS OF INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH QUATERNARY COLLECTOR
Authors: MCALISTER SP ABID ZE MCKINNON WR DAVIES M
Citation: Sp. Mcalister et al., DC AND TEMPERATURE-DEPENDENT CHARACTERISTICS OF INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH QUATERNARY COLLECTOR, Electronics Letters, 29(16), 1993, pp. 1415-1417
A VERSATILE 2-DIMENSIONAL MODEL FOR INGAASP QUANTUM-WELL SEMICONDUCTOR-LASERS
Authors: LI ZM DAVIES M DION M MCALISTER SP
Citation: Zm. Li et al., A VERSATILE 2-DIMENSIONAL MODEL FOR INGAASP QUANTUM-WELL SEMICONDUCTOR-LASERS, Canadian journal of physics, 70(10-11), 1992, pp. 937-942
SIDEGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) - ROLE OF STATIONARY GUNN DOMAINS
Authors: MCKINNON WR MCALISTER SP
Citation: Wr. Mckinnon et Sp. Mcalister, SIDEGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) - ROLE OF STATIONARY GUNN DOMAINS, Canadian journal of physics, 70(10-11), 1992, pp. 1064-1069
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