Authors:
NAGY G
LEVY M
SCARMOZZINO R
OSGOOD RM
DAI H
SMALLEY RE
MICHAELS CA
FLYNN GW
MCLANE GF
Citation: G. Nagy et al., CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS, Applied physics letters, 73(4), 1998, pp. 529-531
Authors:
NAGY G
LEVY M
SCARMOZZINO R
OSGOOD RM
DAI H
SMALLEY RE
MICHAELS CA
SEVY ET
FLYNN GW
MCLANE GF
Citation: G. Nagy et al., CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS (VOL 73, PG 529, 1998), Applied physics letters, 73(10), 1998, pp. 1448-1448
Citation: Gf. Mclane et al., DRY-ETCHING OF GERMANIUM IN MAGNETRON ENHANCED SF6 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 990-992
Authors:
MCLANE GF
WOOD MC
ECKART DW
LEE JW
LEE KN
PEARTON SJ
ABERNATHY CR
Citation: Gf. Mclane et al., DRY-ETCHING OF INGAP IN MAGNETRON ENHANCED BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 622-625
Authors:
CHAO LL
CARGILL GS
LEVY M
OSGOOD RM
MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING (VOL 70, PG 408, 1997), Applied physics letters, 71(4), 1997, pp. 558-558
Authors:
CHAO LL
CARGILL GS
LEVY M
OSGOOD RM
MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING, Applied physics letters, 70(4), 1997, pp. 408-410
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GROUP III-NITRIDE TERNARY ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1046-1049
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 724-726
Authors:
FREILER M
MCLANE GF
KIM S
LEVY M
SCARMOZZINO R
HERMAN IP
OSGOOD RM
Citation: M. Freiler et al., LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES, Applied physics letters, 67(26), 1995, pp. 3883-3885
Authors:
MCLANE GF
CASAS L
PEARTON SJ
ABERNATHY CR
Citation: Gf. Mclane et al., HIGH ETCH RATES OF GAN WITH MAGNETRON REACTIVE ION ETCHING IN BCL3 PLASMAS, Applied physics letters, 66(24), 1995, pp. 3328-3330
Authors:
MCLANE GF
CASAS L
REID JS
KOLAWA E
NICOLET MA
Citation: Gf. Mclane et al., REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CF4+O2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2352-2355
Citation: Gf. Mclane et al., MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4 H2/AR - SURFACE DAMAGE STUDY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1356-1359
Authors:
MCLANE GF
MEYYAPPAN M
LEE HS
COLE MW
ECKART DW
LAREAU RT
NAMAROFF M
SASSERATH J
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 333-336
Citation: Mw. Cole et al., A COMPARATIVE MATERIALS STUDY OF MAGNETRON ION ETCHED GAAS USING FREON-12, SICL4 AND BCL3, Scanning, 15(4), 1993, pp. 225-231