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Results: 1-18 |
Results: 18
CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS
Authors: NAGY G LEVY M SCARMOZZINO R OSGOOD RM DAI H SMALLEY RE MICHAELS CA FLYNN GW MCLANE GF
Citation: G. Nagy et al., CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS, Applied physics letters, 73(4), 1998, pp. 529-531
CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS (VOL 73, PG 529, 1998)
Authors: NAGY G LEVY M SCARMOZZINO R OSGOOD RM DAI H SMALLEY RE MICHAELS CA SEVY ET FLYNN GW MCLANE GF
Citation: G. Nagy et al., CARBON NANOTUBE TIPPED ATOMIC-FORCE MICROSCOPY FOR MEASUREMENT OF LESS-THAN-100NM ETCH MORPHOLOGY ON SEMICONDUCTORS (VOL 73, PG 529, 1998), Applied physics letters, 73(10), 1998, pp. 1448-1448
DRY-ETCHING OF GERMANIUM IN MAGNETRON ENHANCED SF6 PLASMAS
Authors: MCLANE GF DUBEY M WOOD MC LYNCH KE
Citation: Gf. Mclane et al., DRY-ETCHING OF GERMANIUM IN MAGNETRON ENHANCED SF6 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 990-992
DRY-ETCHING OF INGAP IN MAGNETRON ENHANCED BCL3 PLASMAS
Authors: MCLANE GF WOOD MC ECKART DW LEE JW LEE KN PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., DRY-ETCHING OF INGAP IN MAGNETRON ENHANCED BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 622-625
REACTIVE ION ETCHING OF III-V NITRIDES
Authors: PEARTON SJ SHUL RJ MCLANE GF CONSTANTINE C
Citation: Sj. Pearton et al., REACTIVE ION ETCHING OF III-V NITRIDES, Solid-state electronics, 41(2), 1997, pp. 159-163
CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING (VOL 70, PG 408, 1997)
Authors: CHAO LL CARGILL GS LEVY M OSGOOD RM MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING (VOL 70, PG 408, 1997), Applied physics letters, 71(4), 1997, pp. 558-558
CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING
Authors: CHAO LL CARGILL GS LEVY M OSGOOD RM MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING, Applied physics letters, 70(4), 1997, pp. 408-410
MAGNETRON REACTIVE ION ETCHING OF GROUP III-NITRIDE TERNARY ALLOYS
Authors: MCLANE GF MONAHAN T ECKART DW PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GROUP III-NITRIDE TERNARY ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1046-1049
HIGH ETCH RATES OF SIC IN MAGNETRON ENHANCED SF6 PLASMAS
Authors: MCLANE GF FLEMISH JR
Citation: Gf. Mclane et Jr. Flemish, HIGH ETCH RATES OF SIC IN MAGNETRON ENHANCED SF6 PLASMAS, Applied physics letters, 68(26), 1996, pp. 3755-3757
MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS
Authors: MCLANE GF CASAS L LAREAU RT ECKART DW VARTULI CB PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 724-726
REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CHF3-2(O)
Authors: MCLANE GF CASAS L REID JS NICOLET MA
Citation: Gf. Mclane et al., REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CHF3-2(O), Electronics Letters, 31(7), 1995, pp. 591-592
LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES
Authors: FREILER M MCLANE GF KIM S LEVY M SCARMOZZINO R HERMAN IP OSGOOD RM
Citation: M. Freiler et al., LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES, Applied physics letters, 67(26), 1995, pp. 3883-3885
HIGH ETCH RATES OF GAN WITH MAGNETRON REACTIVE ION ETCHING IN BCL3 PLASMAS
Authors: MCLANE GF CASAS L PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., HIGH ETCH RATES OF GAN WITH MAGNETRON REACTIVE ION ETCHING IN BCL3 PLASMAS, Applied physics letters, 66(24), 1995, pp. 3328-3330
REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CF4+O2
Authors: MCLANE GF CASAS L REID JS KOLAWA E NICOLET MA
Citation: Gf. Mclane et al., REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CF4+O2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2352-2355
MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4 H2/AR - SURFACE DAMAGE STUDY/
Authors: MCLANE GF BUCHWALD WR CASAS L COLE MW
Citation: Gf. Mclane et al., MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4 H2/AR - SURFACE DAMAGE STUDY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1356-1359
FABRICATION OF MULTIPOLAR MAGNETIC-FIELD SOURCES
Authors: LEUPOLD HA MCLANE GF
Citation: Ha. Leupold et Gf. Mclane, FABRICATION OF MULTIPOLAR MAGNETIC-FIELD SOURCES, Journal of applied physics, 76(10), 1994, pp. 6253-6255
MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE
Authors: MCLANE GF MEYYAPPAN M LEE HS COLE MW ECKART DW LAREAU RT NAMAROFF M SASSERATH J
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 333-336
A COMPARATIVE MATERIALS STUDY OF MAGNETRON ION ETCHED GAAS USING FREON-12, SICL4 AND BCL3
Authors: COLE MW MCLANE GF ECKART DW MEYYAPPAN M
Citation: Mw. Cole et al., A COMPARATIVE MATERIALS STUDY OF MAGNETRON ION ETCHED GAAS USING FREON-12, SICL4 AND BCL3, Scanning, 15(4), 1993, pp. 225-231
Risultati: 1-18 |