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Results: 1-10 |
Results: 10
2ND-GENERATION LIQUID SOURCE MISTED CHEMICAL-DEPOSITION (LSMCD) TECHNOLOGY FOR FERROELECTRIC THIN-FILMS
Authors: SOLAYAPPAN N MCMILLAN LD DEARAUJO CAP GRANT B
Citation: N. Solayappan et al., 2ND-GENERATION LIQUID SOURCE MISTED CHEMICAL-DEPOSITION (LSMCD) TECHNOLOGY FOR FERROELECTRIC THIN-FILMS, Integrated ferroelectrics, 18(1-4), 1997, pp. 127-136
CHARACTERIZATION OF SELF-PATTERNED SBT SBNT THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS/
Authors: UCHIDA H SOYAMA N KAGEYAMA K OGI K SCOTT MC CUCHIARO JD MCMILLAN LD DEARAUJO CAP
Citation: H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SBT SBNT THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS/, Integrated ferroelectrics, 18(1-4), 1997, pp. 249-261
CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS
Authors: UCHIDA H SOYAMA N KAGEYAMA K OGI K SCOTT MC CUCHIARO JD DERBENWICK GF MCMILLAN LD DEARAUJO CAP
Citation: H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS, Integrated ferroelectrics, 16(1-4), 1997, pp. 41-52
CONFORMAL LSMCD DEPOSITION OF SRBI2(TA1-XNBX)(2)O-9
Authors: SOLAYAPPAN N DERBENWICK GF MCMILLAN LD DEARAUJO CAP HAYASHI S
Citation: N. Solayappan et al., CONFORMAL LSMCD DEPOSITION OF SRBI2(TA1-XNBX)(2)O-9, Integrated ferroelectrics, 14(1-4), 1997, pp. 237-246
APPLICATIONS OF ELECTRON-MICROSCOPY IN COLLABORATIVE INDUSTRIAL-RESEARCH
Authors: ROSS FM KRISHNAN KM THANGARAJ N FARROW RFC MARKS RF CEBOLLADA A PARKIN SSP TONEY MF HUFFMAN M DEARAUJO CAP MCMILLAN LD CUCHIARO J SCOTT MC ECHER C PONCE F OKEEFE MA NELSON EC
Citation: Fm. Ross et al., APPLICATIONS OF ELECTRON-MICROSCOPY IN COLLABORATIVE INDUSTRIAL-RESEARCH, MRS bulletin, 21(5), 1996, pp. 17-23
256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/
Authors: SUMI T MORIWAKI N NAKANE G NAKAKUMA T JUDAI Y UEMOTO Y NAGANO Y HAYASHI S AZUMA M OTSUKI T KANO G CUCHIARO JD SCOTT MC MCMILLAN LD DEARAUJO CAP
Citation: T. Sumi et al., 256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/, Integrated ferroelectrics, 6(1-4), 1995, pp. 1-13
A MODEL OF VOLTAGE-DEPENDENT DIELECTRIC LOSSES FOR FERROELECTRIC MMICDEVICES
Authors: SCOTT JF GALT D PRICE JC BEALL JA ONO RH DEARAUJO CAP MCMILLAN LD
Citation: Jf. Scott et al., A MODEL OF VOLTAGE-DEPENDENT DIELECTRIC LOSSES FOR FERROELECTRIC MMICDEVICES, Integrated ferroelectrics, 6(1-4), 1995, pp. 189-203
INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS
Authors: SHIMADA Y NAGANO Y FUJII E AZUMA M UEMOTO Y SUMI T JUDAI Y HAYASHI S MORIWAKI N NAKANE J OTSUKI T DEARAUJO CAP MCMILLAN LD
Citation: Y. Shimada et al., INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS, Integrated ferroelectrics, 11(1-4), 1995, pp. 229-245
FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
Authors: DEARAUJO CAP CUCHIARO JD MCMILLAN LD SCOTT MC SCOTT JF
Citation: Cap. Dearaujo et al., FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES, Nature, 374(6523), 1995, pp. 627-629
APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES
Authors: ARITA K FUJII E SHIMADA Y UEMOTO Y AZUMA M HAYASHI S NASU T INOUE A MATSUDA A NAGANO Y KATSU S OTSUKI T KANO G MCMILLAN LD DEARAUJO CAP
Citation: K. Arita et al., APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES, IEICE transactions on electronics, E77C(3), 1994, pp. 392-398
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