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Results: 1-13 |
Results: 13
EFFECT OF THE DISCHARGING AND RECHARGING OF THE STRESS GENERATED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON THE LOW-FIELD LEAKAGE CURRENT
Authors: MEINERTZHAGEN A PETIT C YARD G JOURDAIN M MONDON F
Citation: A. Meinertzhagen et al., EFFECT OF THE DISCHARGING AND RECHARGING OF THE STRESS GENERATED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON THE LOW-FIELD LEAKAGE CURRENT, Microelectronics and reliability, 38(2), 1998, pp. 221-225
A COUPLED I(V) AND CHARGE-PUMPING ANALYSIS OF STRESS-INDUCED LEAKAGE CURRENTS IN 5NM-THICK GATE OXIDES
Authors: GOGUENHEIM D BRAVAIX A VUILLAUME D MONDON F CANDELIER P JOURDAIN M MEINERTZHAGEN A
Citation: D. Goguenheim et al., A COUPLED I(V) AND CHARGE-PUMPING ANALYSIS OF STRESS-INDUCED LEAKAGE CURRENTS IN 5NM-THICK GATE OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 141-144
STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS
Authors: ELHDIY A SALACE G JOURDAIN M MEINERTZHAGEN A VUILLAUME D
Citation: A. Elhdiy et al., STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS, Thin solid films, 296(1-2), 1997, pp. 106-109
GENERATION OF HOT HOLES IN MOSFET
Authors: NEBEL F JOURDAIN M MEINERTZHAGEN A CANDELIER P
Citation: F. Nebel et al., GENERATION OF HOT HOLES IN MOSFET, Journal of non-crystalline solids, 216, 1997, pp. 168-173
COMPARISON OF THE CHARGES GENERATED BY FOWLER-NORDHEIM TUNNELING INJECTION IN DIFFERENT OXIDES OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: YARD G MEINERTZHAGEN A PETIT C JOURDAIN M MONDON F
Citation: G. Yard et al., COMPARISON OF THE CHARGES GENERATED BY FOWLER-NORDHEIM TUNNELING INJECTION IN DIFFERENT OXIDES OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of non-crystalline solids, 216, 1997, pp. 174-179
ON THE POSITIVE CHARGE AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MEINERTZHAGEN A PETIT C YARD G JOURDAIN M ELHDIY A
Citation: A. Meinertzhagen et al., ON THE POSITIVE CHARGE AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(1), 1996, pp. 271-277
ON THE DECAY OF THE TRAPPED HOLES AND THE SLOW STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MEINERTZHAGEN A PETIT C YARD G JAURDAIN M SALACE G
Citation: A. Meinertzhagen et al., ON THE DECAY OF THE TRAPPED HOLES AND THE SLOW STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 79(5), 1996, pp. 2549-2558
ON THE FREQUENCY LOSS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEPLETION AND WEAK INVERSION
Authors: MEINERTZHAGEN A ELRHARBI S PETIT C JOURDAIN M
Citation: A. Meinertzhagen et al., ON THE FREQUENCY LOSS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEPLETION AND WEAK INVERSION, Thin solid films, 256(1-2), 1995, pp. 253-256
COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES
Authors: MEINERTZHAGEN A YARD G PETIT C JOURDAIN M ELHDIY A SALACE G REIMBOLD G
Citation: A. Meinertzhagen et al., COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES, Journal of non-crystalline solids, 187, 1995, pp. 181-185
THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE
Authors: ELHDIY A SALACE G MEINERTZHAGEN A JOURDAIN M PETIT C AASSIME A
Citation: A. Elhdiy et al., THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE, Journal of non-crystalline solids, 187, 1995, pp. 216-220
CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS
Authors: ELRHARBI S JOURDAIN M MEINERTZHAGEN A ELHDIY A PETIT C
Citation: S. Elrharbi et al., CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS, Journal de physique. III, 4(6), 1994, pp. 1045-1051
ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MEINERTZHAGEN A HENRY V PETIT C ELHDIY A JOURDAIN M
Citation: A. Meinertzhagen et al., ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Solid-state electronics, 37(8), 1994, pp. 1553-1556
EFFECT OF TUNNELING ELECTRONS IN FOWLER-NORDHEIM REGIME ON THE CURRENT-VOLTAGE CHARACTERISTICS AND MODEL OF DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: ELRHARBI S JOURDAIN M MEINERTZHAGEN A
Citation: S. Elrharbi et al., EFFECT OF TUNNELING ELECTRONS IN FOWLER-NORDHEIM REGIME ON THE CURRENT-VOLTAGE CHARACTERISTICS AND MODEL OF DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 1013-1020
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