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Results: 1-14 |
Results: 14

Authors: PETINOT F PLAIS F MENCARAGLIA D LEGAGNEUX P REITA C HUET O PRIBAT D
Citation: F. Petinot et al., DEFECTS IN SOLID-PHASE AND LASER CRYSTALLIZED POLYSILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 230, 1998, pp. 1207-1212

Authors: DAYOUB F KLEIDER JP MENCARAGLIA D
Citation: F. Dayoub et al., COMPARISON OF AL SIN/A-SI-H AND AL/SIO2/A-SI-H TOP GATE STRUCTURES UNDER THERMAL BIAS STRESSES/, Thin solid films, 296(1-2), 1997, pp. 137-140

Authors: ROLLAND A RICHARD J KLEIDER JP MENCARAGLIA D
Citation: A. Rolland et al., SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS, JPN J A P 1, 35(8), 1996, pp. 4257-4260

Authors: GUEDJ C BOULMER J BOUCHIER D CLERC C CALVARIN G GODET C CABARROCAS PRI HOUZE F MENCARAGLIA D
Citation: C. Guedj et al., BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 102, 1996, pp. 28-32

Authors: DAYOUB F KLEIDER JP LONGEAUD C MENCARAGLIA D REYNAUD J
Citation: F. Dayoub et al., THERMAL BIAS ANNEALING EXPERIMENTS ON ALUMINUM SILICON-NITRIDE HYDROGENATED AMORPHOUS-SILICON TOP GATE STRUCTURES, Journal of non-crystalline solids, 200, 1996, pp. 318-321

Authors: AOUCHER M MOHAMMEDBRAHIM T BODIN C MENCARAGLIA D
Citation: M. Aoucher et al., OXYGEN ADSORPTION-DESORPTION EFFECT ON THE ELECTRICAL-PROPERTIES OF A-SI-H LAYERS, Sensors and actuators. B, Chemical, 26(1-3), 1995, pp. 113-115

Authors: REYNAUD J KLEIDER JP MENCARAGLIA D
Citation: J. Reynaud et al., BIAS STRESS STUDIES OF A-SIN-H A-SI-H MIS STRUCTURES FROM QUASI-STATIC CAPACITANCE MEASUREMENTS/, Journal of non-crystalline solids, 187, 1995, pp. 313-318

Authors: KLEIDER JP MENCARAGLIA D
Citation: Jp. Kleider et D. Mencaraglia, THEORETICAL-STUDY OF THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES IN AMORPHOUS-SEMICONDUCTORS, Journal of applied physics, 78(6), 1995, pp. 3857-3866

Authors: FRUGIER T BOULAHIA A SAYAH A TONNEAU D BOUREE JE SIFFRE JM MENCARAGLIA D
Citation: T. Frugier et al., LASER-INDUCED DEPOSITION OF ALUMINUM ON GALLIUM-ARSENIDE AND SILICON-NITRIDE FROM TRIMETHYLAMINE ALANE, Applied surface science, 69(1-4), 1993, pp. 305-309

Authors: KLEIDER JP LONGEAUD C MENCARAGLIA D ROLLAND A VITROU P RICHARD J
Citation: Jp. Kleider et al., DENSITY-OF-STATES IN THIN-FILM TRANSISTORS FROM THE MODULATED PHOTOCURRENT TECHNIQUE - APPLICATION TO THE STUDY OF METASTABILITIES, Journal of non-crystalline solids, 166, 1993, pp. 739-742

Authors: MENCARAGLIA D DJEBBOUR Z SIB J ASSAL S
Citation: D. Mencaraglia et al., AGING EFFECTS IN A-SI-H PIN SOLAR-CELLS INVESTIGATED BY BELOW GAP MODULATED PHOTOCURRENT SPECTROSCOPY, Journal of non-crystalline solids, 166, 1993, pp. 247-250

Authors: BELDI N SIB J CHAHED L SMAIL T MOHAMMEDBRAHIM T DJEBBOUR Z KLEIDER JP LONGEAUD C MENCARAGLIA D
Citation: N. Beldi et al., OPTIMIZATION OF THE HYDROGEN CONTENT IN A-SI-H DEPOSITED AT HIGH-RATEBY DE MAGNETRON SPUTTERING, Journal of non-crystalline solids, 166, 1993, pp. 309-312

Authors: LONGEAUD C KLEIDER JP MENCARAGLIA D AMARAL A CARVALHO CN
Citation: C. Longeaud et al., DETERMINATION OF THE DENSITY-OF-STATES IN P-DOPED HYDROGENATED AMORPHOUS-SILICON BY MEANS OF THE MODULATED PHOTOCURRENT EXPERIMENT, Journal of non-crystalline solids, 166, 1993, pp. 423-426

Authors: ROLLAND A RICHARD J KLEIDER JP MENCARAGLIA D
Citation: A. Rolland et al., ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON TRANSISTORS AND MIS-DEVICES - COMPARATIVE-STUDY OF TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS, Journal of the Electrochemical Society, 140(12), 1993, pp. 3679-3683
Risultati: 1-14 |