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Results: 1-15 |
Results: 15
FAILURE MECHANISMS DUE TO METALLURGICAL INTERACTIONS IN COMMERCIALLY AVAILABLE ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/
Authors: MENEGHESSO G MAGISTRALI F SALA D VANZI M CANALI C ZANONI E
Citation: G. Meneghesso et al., FAILURE MECHANISMS DUE TO METALLURGICAL INTERACTIONS IN COMMERCIALLY AVAILABLE ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 38(4), 1998, pp. 497-506
BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/
Authors: HURT MJ MENEGHESSO G ZANONI E PEATMAN WCB TSAI R SHUR MS
Citation: Mj. Hurt et al., BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1843-1845
POSITIVE TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN IN0.53GA0.47AS INP HBTS/
Authors: NEVIANI A MENEGHESSO G ZANONI E HAFIZI M CANALI C
Citation: A. Neviani et al., POSITIVE TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN IN0.53GA0.47AS INP HBTS/, IEEE electron device letters, 18(12), 1997, pp. 619-621
LIGHT-EMISSION MEASUREMENTS - A PROMISING TOOL TO IDENTIFY HOT-CARRIER PHENOMENA
Authors: MENEGHESSO G PAVESI M PAVESI S
Citation: G. Meneghesso et al., LIGHT-EMISSION MEASUREMENTS - A PROMISING TOOL TO IDENTIFY HOT-CARRIER PHENOMENA, Physica status solidi. a, Applied research, 164(2), 1997, pp. 837-843
FAILURE MECHANISMS OF ALGAAS INGAAS PSEUDOMORPHIC HEMTS - EFFECTS DUETO HOT-ELECTRONS AND MODULATION OF TRAPPED CHARGE/
Authors: MENEGHESSO G DEBORTOLI E SALA D ZANONI E
Citation: G. Meneghesso et al., FAILURE MECHANISMS OF ALGAAS INGAAS PSEUDOMORPHIC HEMTS - EFFECTS DUETO HOT-ELECTRONS AND MODULATION OF TRAPPED CHARGE/, Microelectronics and reliability, 37(7), 1997, pp. 1121-1129
A STUDY OF HOT-ELECTRON DEGRADATION EFFECTS IN PSEUDOMORPHIC HEMTS
Authors: COVA P MENOZZI R FANTINI F PAVESI M MENEGHESSO G
Citation: P. Cova et al., A STUDY OF HOT-ELECTRON DEGRADATION EFFECTS IN PSEUDOMORPHIC HEMTS, Microelectronics and reliability, 37(7), 1997, pp. 1131-1135
EFFECTS OF ESD PROTECTIONS ON LATCH-UP SENSITIVITY OF CMOS 4-STRIPE STRUCTURES
Authors: PAVAN P PELLESI A MENEGHESSO G ZANONI E
Citation: P. Pavan et al., EFFECTS OF ESD PROTECTIONS ON LATCH-UP SENSITIVITY OF CMOS 4-STRIPE STRUCTURES, Microelectronics and reliability, 37(10-11), 1997, pp. 1561-1564
DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING
Authors: MENEGHESSO G COGLIATI B DONZELLI G SALA D ZANONI E
Citation: G. Meneghesso et al., DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING, Microelectronics and reliability, 37(10-11), 1997, pp. 1679-1682
HOT-CARRIER EFFECTS IN ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS - FAILURE MECHANISMS INDUCED BY HOT-CARRIER TESTING/
Authors: MENEGHESSO G MION A HADDAB Y PAVESI M MANFREDI M CANALI C ZANONI E
Citation: G. Meneghesso et al., HOT-CARRIER EFFECTS IN ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS - FAILURE MECHANISMS INDUCED BY HOT-CARRIER TESTING/, Journal of applied physics, 82(11), 1997, pp. 5547-5554
STUDY OF NEUTRON DAMAGE IN GAAS-MESFETS
Authors: MENEGHESSO G PACCAGNELLA A CAMIN DV FEDYAKIN N PESSINA G CANALI C
Citation: G. Meneghesso et al., STUDY OF NEUTRON DAMAGE IN GAAS-MESFETS, IEEE transactions on nuclear science, 44(3), 1997, pp. 840-846
TRAPPED CHARGE MODULATION - A NEW CAUSE OF INSTABILITY IN ALGAAS INGAAS PSEUDOMORPHIC HEMTS/
Authors: MENEGHESSO G CANALI C COVA P DEBORTOLI E ZANONI E
Citation: G. Meneghesso et al., TRAPPED CHARGE MODULATION - A NEW CAUSE OF INSTABILITY IN ALGAAS INGAAS PSEUDOMORPHIC HEMTS/, IEEE electron device letters, 17(5), 1996, pp. 232-234
TURN-ON SPEED OF GROUNDED GATE NMOS ESD PROTECTION TRANSISTORS
Authors: MENEGHESSO G LUCHIES JRM KUPER FG MOUTHAAN AJ
Citation: G. Meneghesso et al., TURN-ON SPEED OF GROUNDED GATE NMOS ESD PROTECTION TRANSISTORS, Microelectronics and reliability, 36(11-12), 1996, pp. 1735-1738
DRAIN CURRENT DLTS ANALYSIS OF RECOVERABLE AND PERMANENT DEGRADATION EFFECTS IN ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/
Authors: MENEGHESSO G HADDAB Y PERRINO N CANALI C ZANONI E
Citation: G. Meneghesso et al., DRAIN CURRENT DLTS ANALYSIS OF RECOVERABLE AND PERMANENT DEGRADATION EFFECTS IN ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 36(11-12), 1996, pp. 1895-1898
EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: MENEGHESSO G PACCAGNELLA A HADDAB Y CANALI C ZANONI E
Citation: G. Meneghesso et al., EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1411-1413
RECOVERY OF LOW-TEMPERATURE ELECTRON TRAPPING IN ALGAAS INGAAS PM-HEMTS DUE TO IMPACT-IONIZATION/
Authors: MENEGHESSO G DEBORTOLI E PACCAGNELLA A ZANONI E CANALI C
Citation: G. Meneghesso et al., RECOVERY OF LOW-TEMPERATURE ELECTRON TRAPPING IN ALGAAS INGAAS PM-HEMTS DUE TO IMPACT-IONIZATION/, IEEE electron device letters, 16(7), 1995, pp. 336-338
Risultati: 1-15 |