Authors:
MENEGHESSO G
MAGISTRALI F
SALA D
VANZI M
CANALI C
ZANONI E
Citation: G. Meneghesso et al., FAILURE MECHANISMS DUE TO METALLURGICAL INTERACTIONS IN COMMERCIALLY AVAILABLE ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 38(4), 1998, pp. 497-506
Authors:
HURT MJ
MENEGHESSO G
ZANONI E
PEATMAN WCB
TSAI R
SHUR MS
Citation: Mj. Hurt et al., BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1843-1845
Authors:
NEVIANI A
MENEGHESSO G
ZANONI E
HAFIZI M
CANALI C
Citation: A. Neviani et al., POSITIVE TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN IN0.53GA0.47AS INP HBTS/, IEEE electron device letters, 18(12), 1997, pp. 619-621
Citation: G. Meneghesso et al., LIGHT-EMISSION MEASUREMENTS - A PROMISING TOOL TO IDENTIFY HOT-CARRIER PHENOMENA, Physica status solidi. a, Applied research, 164(2), 1997, pp. 837-843
Citation: G. Meneghesso et al., FAILURE MECHANISMS OF ALGAAS INGAAS PSEUDOMORPHIC HEMTS - EFFECTS DUETO HOT-ELECTRONS AND MODULATION OF TRAPPED CHARGE/, Microelectronics and reliability, 37(7), 1997, pp. 1121-1129
Authors:
COVA P
MENOZZI R
FANTINI F
PAVESI M
MENEGHESSO G
Citation: P. Cova et al., A STUDY OF HOT-ELECTRON DEGRADATION EFFECTS IN PSEUDOMORPHIC HEMTS, Microelectronics and reliability, 37(7), 1997, pp. 1131-1135
Citation: P. Pavan et al., EFFECTS OF ESD PROTECTIONS ON LATCH-UP SENSITIVITY OF CMOS 4-STRIPE STRUCTURES, Microelectronics and reliability, 37(10-11), 1997, pp. 1561-1564
Authors:
MENEGHESSO G
COGLIATI B
DONZELLI G
SALA D
ZANONI E
Citation: G. Meneghesso et al., DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING, Microelectronics and reliability, 37(10-11), 1997, pp. 1679-1682
Authors:
MENEGHESSO G
MION A
HADDAB Y
PAVESI M
MANFREDI M
CANALI C
ZANONI E
Citation: G. Meneghesso et al., HOT-CARRIER EFFECTS IN ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS - FAILURE MECHANISMS INDUCED BY HOT-CARRIER TESTING/, Journal of applied physics, 82(11), 1997, pp. 5547-5554
Authors:
MENEGHESSO G
CANALI C
COVA P
DEBORTOLI E
ZANONI E
Citation: G. Meneghesso et al., TRAPPED CHARGE MODULATION - A NEW CAUSE OF INSTABILITY IN ALGAAS INGAAS PSEUDOMORPHIC HEMTS/, IEEE electron device letters, 17(5), 1996, pp. 232-234
Authors:
MENEGHESSO G
LUCHIES JRM
KUPER FG
MOUTHAAN AJ
Citation: G. Meneghesso et al., TURN-ON SPEED OF GROUNDED GATE NMOS ESD PROTECTION TRANSISTORS, Microelectronics and reliability, 36(11-12), 1996, pp. 1735-1738
Authors:
MENEGHESSO G
HADDAB Y
PERRINO N
CANALI C
ZANONI E
Citation: G. Meneghesso et al., DRAIN CURRENT DLTS ANALYSIS OF RECOVERABLE AND PERMANENT DEGRADATION EFFECTS IN ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 36(11-12), 1996, pp. 1895-1898
Authors:
MENEGHESSO G
PACCAGNELLA A
HADDAB Y
CANALI C
ZANONI E
Citation: G. Meneghesso et al., EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1411-1413
Authors:
MENEGHESSO G
DEBORTOLI E
PACCAGNELLA A
ZANONI E
CANALI C
Citation: G. Meneghesso et al., RECOVERY OF LOW-TEMPERATURE ELECTRON TRAPPING IN ALGAAS INGAAS PM-HEMTS DUE TO IMPACT-IONIZATION/, IEEE electron device letters, 16(7), 1995, pp. 336-338