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Results: 1-10 |
Results: 10
IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY
Authors: DEGENDT S KNOTTER DM KENIS K DEPAS M MEURIS M MERTENS PW HEYNS MM
Citation: S. Degendt et al., IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY, JPN J A P 1, 37(9A), 1998, pp. 4649-4655
POINT OF USE HF PURIFICATION FOR SILICON SURFACE PREPARATION BY ION-EXCHANGE
Authors: FYEN W MOUCHE L MEURIS M HEYNS MM
Citation: W. Fyen et al., POINT OF USE HF PURIFICATION FOR SILICON SURFACE PREPARATION BY ION-EXCHANGE, Journal of the Electrochemical Society, 144(6), 1997, pp. 2189-2196
LIGHT POINT-DEFECT GENERATION DURING PHOTORESIST SPIN-COATING - CHARACTERIZATION AND CONTROLLING PARAMETERS
Authors: MOUCHE L MEURIS M HEYNS MM
Citation: L. Mouche et al., LIGHT POINT-DEFECT GENERATION DURING PHOTORESIST SPIN-COATING - CHARACTERIZATION AND CONTROLLING PARAMETERS, Journal of the Electrochemical Society, 144(10), 1997, pp. 3608-3613
IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS
Authors: TEERLINCK I MERTENS PW SCHMIDT HF MEURIS M HEYNS MM
Citation: I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327
H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY
Authors: SCHMIDT HF MEURIS M MERTENS PW ROTONDARO ALP HEYNS MM HURD TQ HATCHER Z
Citation: Hf. Schmidt et al., H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY, JPN J A P 1, 34(2B), 1995, pp. 727-731
WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
Authors: DEPAS M VERMEIRE B MARTENS PW MEURIS M HEYNS MM
Citation: M. Depas et al., WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING, Semiconductor science and technology, 10(6), 1995, pp. 753-758
THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES
Authors: MEURIS M MERTENS PW OPDEBEECK A SCHMIDT HF DEPAS M VEREECKE G HEYNS MM PHILIPOSSIAN A
Citation: M. Meuris et al., THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES, Solid state technology, 38(7), 1995, pp. 109
SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS
Authors: LI L BENDER H TRENKLER T MERTENS PW MEURIS M VANDERVORST W HEYNS MM
Citation: L. Li et al., SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS, Journal of applied physics, 77(3), 1995, pp. 1323-1325
SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING
Authors: ROTONDARO ALP MEURIS M SCHMIDT HF HEYNS MM CLAEYS C HELLEMANS L SNAUWAERT J
Citation: Alp. Rotondaro et al., SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING, Journal of the Electrochemical Society, 142(1), 1995, pp. 211-216
CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY
Authors: MEURIS M VERHAVERBEKE S MERTENS PW SCHMIDT HF HEYNS MM KUBOTA M PHILIPOSSIAN A DILLENBECK K GRAF D SCHNEGG A DEBLANK R
Citation: M. Meuris et al., CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY, Microelectronic engineering, 22(1-4), 1993, pp. 21-28
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