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Results: 1-12 |
Results: 12
THE EVOLUTION OF THE SUBSTRATE-DRAIN JUNCTION PARAMETERS DURING ELECTRICAL AGING FOR N-MOS TRANSISTOR CHARACTERIZATION
Authors: DELABARDONNIE M MIALHE P CHARLES JP
Citation: M. Delabardonnie et al., THE EVOLUTION OF THE SUBSTRATE-DRAIN JUNCTION PARAMETERS DURING ELECTRICAL AGING FOR N-MOS TRANSISTOR CHARACTERIZATION, Journal of physics. D, Applied physics, 31(1), 1998, pp. 151-157
CHARACTERIZATION OF MOSFETS DEGRADATION B Y IONIZING-RADIATIONS
Authors: BENDADA E RAIS K MIALHE P
Citation: E. Bendada et al., CHARACTERIZATION OF MOSFETS DEGRADATION B Y IONIZING-RADIATIONS, Journal de physique. III, 7(11), 1997, pp. 2131-2143
A DELTA-DOPED SUBSTRUCTURE IN SOLAR-CELLS - CARRIERS CONFINEMENT AND PHOTOCURRENT
Authors: PELANCHON F MOREAU Y MIALHE P
Citation: F. Pelanchon et al., A DELTA-DOPED SUBSTRUCTURE IN SOLAR-CELLS - CARRIERS CONFINEMENT AND PHOTOCURRENT, Journal de physique. III, 7(1), 1997, pp. 117-131
SILICON-OXIDE DEFECTS IN AGING OF MOS ELECTRONIC DEVICES
Authors: DELABARDONNIE M MAOUAD A MIALHE P
Citation: M. Delabardonnie et al., SILICON-OXIDE DEFECTS IN AGING OF MOS ELECTRONIC DEVICES, Journal of non-crystalline solids, 216, 1997, pp. 209-212
DIODE IDEALITY FACTOR FOR MOSFETS CHARACTERIZATION OF DOSE-EFFECT
Authors: BENDADA E DELABARDONNIE M MIALHE P CHARLES JP
Citation: E. Bendada et al., DIODE IDEALITY FACTOR FOR MOSFETS CHARACTERIZATION OF DOSE-EFFECT, Radiation effects and defects in solids, 138(1-2), 1996, pp. 39-48
DYNAMIC INTERFACE VELOCITY FOR JUNCTION CHARACTERIZATION
Authors: FARAH J AZAR B KHOURY A MIALHE P BLAISE P
Citation: J. Farah et al., DYNAMIC INTERFACE VELOCITY FOR JUNCTION CHARACTERIZATION, Solar energy materials and solar cells, 44(2), 1996, pp. 191-197
TOWARD A THEORETICAL LIMIT OF SOLAR-CELL EFFICIENCY WITH LIGHT TRAPPING AND SUBSTRUCTURE
Authors: PELANCHON F MIALHE P
Citation: F. Pelanchon et P. Mialhe, TOWARD A THEORETICAL LIMIT OF SOLAR-CELL EFFICIENCY WITH LIGHT TRAPPING AND SUBSTRUCTURE, Solar energy, 54(6), 1995, pp. 381-385
CHARACTERIZATION METHOD FOR IONIZING-RADIATION DEGRADATION IN POWER MOSFETS
Authors: DELABARDONNIE M MAOUAD A MIALHE P ELMAZRIA O HOFFMANN A LEPLEY B CHARLES JP
Citation: M. Delabardonnie et al., CHARACTERIZATION METHOD FOR IONIZING-RADIATION DEGRADATION IN POWER MOSFETS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1622-1627
MODELING OF THE MOLECULAR ION H2- AN UNIFIED APPROACH OF THE MAGNITUDE OF PHYSICAL PARAMETERS CHARACTERIZING DIATOMIC-MOLECULES( BY AID OF THE COULOMB AND OF THE DEBROGLIE RELATIONS )
Authors: BLAISE P HENRIROUSSEAU O MIALHE P
Citation: P. Blaise et al., MODELING OF THE MOLECULAR ION H2- AN UNIFIED APPROACH OF THE MAGNITUDE OF PHYSICAL PARAMETERS CHARACTERIZING DIATOMIC-MOLECULES( BY AID OF THE COULOMB AND OF THE DEBROGLIE RELATIONS ), Journal de chimie physique et de physico-chimie biologique, 91(9), 1994, pp. 1347-1385
DIODE PARAMETER DETERMINATION AS APPLIED TO MOSFETS FOR RADIATION EFFECTS CHARACTERIZATION
Authors: BENDADA M MIALHE P CHARLES JP
Citation: M. Bendada et al., DIODE PARAMETER DETERMINATION AS APPLIED TO MOSFETS FOR RADIATION EFFECTS CHARACTERIZATION, Radiation effects and defects in solids, 132(4), 1994, pp. 355-360
SOLAR-CELLS - NEW TRANSIENT VOLTAGE METHOD FOR LIFETIME AND RECOMBINATION DETERMINATION IN CONCENTRATED SOLAR IRRADIANCE
Authors: AFFOUR B MIALHE P PELANCHON F CHARLES JP
Citation: B. Affour et al., SOLAR-CELLS - NEW TRANSIENT VOLTAGE METHOD FOR LIFETIME AND RECOMBINATION DETERMINATION IN CONCENTRATED SOLAR IRRADIANCE, Renewable energy, 5(1-4), 1994, pp. 169-171
RECOMBINATION VIA RADIATION-INDUCED DEFECTS IN FIELD-EFFECT TRANSISTOR
Authors: LEBRAS L BENDADA M MIALHE P BLAMPAIN E CHARLES JP
Citation: L. Lebras et al., RECOMBINATION VIA RADIATION-INDUCED DEFECTS IN FIELD-EFFECT TRANSISTOR, Journal of applied physics, 76(10), 1994, pp. 5676-5680
Risultati: 1-12 |