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Results: 1-18 |
Results: 18
COMMENT ON ABSENCE OF CARRIER HOPPING IN POROUS SILICON - REPLY
Authors: MIHALCESCU I VIAL JC ROMESTAIN R
Citation: I. Mihalcescu et al., COMMENT ON ABSENCE OF CARRIER HOPPING IN POROUS SILICON - REPLY, Physical review letters, 81(17), 1998, pp. 3805-3805
ABSENCE OF CARRIER HOPPING IN POROUS SILICON
Authors: MIHALCESCU I VIAL JC ROMESTAIN R
Citation: I. Mihalcescu et al., ABSENCE OF CARRIER HOPPING IN POROUS SILICON, Physical review letters, 80(15), 1998, pp. 3392-3395
OPTICAL-ABSORPTION EVIDENCE OF QUANTUM CONFINEMENT IN SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: BASSANI F MIHALCESCU I VIAL JC DAVITAYA FA
Citation: F. Bassani et al., OPTICAL-ABSORPTION EVIDENCE OF QUANTUM CONFINEMENT IN SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied surface science, 117, 1997, pp. 670-676
POROUS SILICON ANISOTROPY INVESTIGATED BY GUIDED LIGHT
Authors: MIHALCESCU I LERONDEL G ROMESTAIN R
Citation: I. Mihalcescu et al., POROUS SILICON ANISOTROPY INVESTIGATED BY GUIDED LIGHT, Thin solid films, 297(1-2), 1997, pp. 245-249
CARRIER LOCALIZATION IN POROUS SILICON INVESTIGATED BY TIME-RESOLVED LUMINESCENCE ANALYSIS
Authors: MIHALCESCU I VIAL JC ROMESTAIN R
Citation: I. Mihalcescu et al., CARRIER LOCALIZATION IN POROUS SILICON INVESTIGATED BY TIME-RESOLVED LUMINESCENCE ANALYSIS, Journal of applied physics, 80(4), 1996, pp. 2404-2411
FABRICATION AND OPTICAL-PROPERTIES OF SI CAF2(111) MULTIQUANTUM WELLS/
Authors: BASSANI F VERVOORT L MIHALCESCU I VIAL JC DAVITAYA FA
Citation: F. Bassani et al., FABRICATION AND OPTICAL-PROPERTIES OF SI CAF2(111) MULTIQUANTUM WELLS/, Journal of applied physics, 79(8), 1996, pp. 4066-4071
SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT
Authors: ROMESTAIN R VIAL JC MIHALCESCU I BSIESY A
Citation: R. Romestain et al., SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT, Physica status solidi. b, Basic research, 190(1), 1995, pp. 77-84
EFFICIENT VISIBLE-LIGHT EMISSION FROM SI CAF2(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: VERVOORT L BASSANI F MIHALCESCU I VIAL JC DAVITAYA FA
Citation: L. Vervoort et al., EFFICIENT VISIBLE-LIGHT EMISSION FROM SI CAF2(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Physica status solidi. b, Basic research, 190(1), 1995, pp. 123-127
SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT
Authors: MIHALCESCU I VIAL JC BSIESY A MULLER F ROMESTAIN R MARTIN E DELERUE C LANNOO M ALLAN G
Citation: I. Mihalcescu et al., SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT, Physical review. B, Condensed matter, 51(24), 1995, pp. 17605-17613
FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS
Authors: HORY MA HERINO R LIGEON M MULLER F GASPARD F MIHALCESCU I VIAL JC
Citation: Ma. Hory et al., FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS, Thin solid films, 255(1-2), 1995, pp. 200-203
URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS
Authors: BUSTARRET E LIGEON M MIHALCESCU I OSWALD J
Citation: E. Bustarret et al., URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS, Thin solid films, 255(1-2), 1995, pp. 234-237
AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES
Authors: DELERUE C LANNOO M ALLAN G MARTIN E MIHALCESCU I VIAL JC ROMESTAIN R MULLER F BSIESY A
Citation: C. Delerue et al., AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 75(11), 1995, pp. 2228-2231
LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION
Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R
Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076
BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT
Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R
Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602
PREPARATION AND PROPERTIES OF ANODIZED AMORPHOUS-SILICON
Authors: BUSTARRET E CALI J CROS Y BRUNEL M MIHALCESCU I LIGEON M
Citation: E. Bustarret et al., PREPARATION AND PROPERTIES OF ANODIZED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 937-940
ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE
Authors: BSIESY A MULLER F MIHALCESCU I LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32
COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLYOXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON
Authors: BUSTARRET E MIHALCESCU I LIGEON M ROMESTAIN R VIAL JC MADEORE F
Citation: E. Bustarret et al., COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLYOXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 105-109
SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON
Authors: MIHALCESCU I LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: I. Mihalcescu et al., SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 111-115
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