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Results: 1-10 |
Results: 10
MONTE-CARLO SIMULATION OF HEMT BASED ON SELF-CONSISTENT METHOD
Authors: UENO H YAMAKAWA S HAMAGUCHI C MIYATSUJI K
Citation: H. Ueno et al., MONTE-CARLO SIMULATION OF HEMT BASED ON SELF-CONSISTENT METHOD, VLSI design (Print), 6(1-4), 1998, pp. 13-16
ELECTRON-MOBILITY AND MONTE-CARLO DEVICE SIMULATION OF MOSFETS
Authors: YAMAKAWA S UENO H TANIGUCHI K HAMAGUCHI C MIYATSUJI K MASAKI K RAVAIOLI U
Citation: S. Yamakawa et al., ELECTRON-MOBILITY AND MONTE-CARLO DEVICE SIMULATION OF MOSFETS, VLSI design (Print), 6(1-4), 1998, pp. 27-30
TEMPERATURE-INDEPENDENT TRANSCONDUCTANCE IN 0.05 MU-M-GATE ALGAAS GAAS MODFET/
Authors: UEDA T MIYATSUJI K UEDA D
Citation: T. Ueda et al., TEMPERATURE-INDEPENDENT TRANSCONDUCTANCE IN 0.05 MU-M-GATE ALGAAS GAAS MODFET/, Solid-state electronics, 39(1), 1996, pp. 21-26
STUDY OF INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON-MOBILITY IN SI INVERSION-LAYERS USING THE MONTE-CARLO METHOD
Authors: YAMAKAWA S UENO H TANIGUCHI K HAMAGUCHI C MIYATSUJI K MASAKI K RAVAIOLI U
Citation: S. Yamakawa et al., STUDY OF INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON-MOBILITY IN SI INVERSION-LAYERS USING THE MONTE-CARLO METHOD, Journal of applied physics, 79(2), 1996, pp. 911-916
A NOVEL GAAS POWER MESFET WITH LOW DISTORTION CHARACTERISTICS EMPLOYING SEMIINSULATING SETBACK LAYER UNDER THE GATE
Authors: FURUKAWA H TATEOKA K MIYATSUJI K SUGIMURA A UEDA D
Citation: H. Furukawa et al., A NOVEL GAAS POWER MESFET WITH LOW DISTORTION CHARACTERISTICS EMPLOYING SEMIINSULATING SETBACK LAYER UNDER THE GATE, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 193-200
A GAAS SINGLE VOLTAGE-CONTROLLED RF SWITCH IC
Authors: MIYATSUJI K UEDA D
Citation: K. Miyatsuji et D. Ueda, A GAAS SINGLE VOLTAGE-CONTROLLED RF SWITCH IC, IEICE transactions on electronics, E78C(8), 1995, pp. 931-935
A GAAS HIGH-POWER RF SINGLE POLE DUAL THROW SWITCH IC FOR DIGITAL MOBILE COMMUNICATION-SYSTEM
Authors: MIYATSUJI K UEDA D
Citation: K. Miyatsuji et D. Ueda, A GAAS HIGH-POWER RF SINGLE POLE DUAL THROW SWITCH IC FOR DIGITAL MOBILE COMMUNICATION-SYSTEM, IEEE journal of solid-state circuits, 30(9), 1995, pp. 979-983
FREQUENCY DISPERSION AND MODULATED SIGNAL DISTORTION CHARACTERISTICS OF GAAS POWER MESFETS AT LARGE-SIGNAL OPERATION
Authors: MIYATSUJI K FURUKAWA H UEDA D
Citation: K. Miyatsuji et al., FREQUENCY DISPERSION AND MODULATED SIGNAL DISTORTION CHARACTERISTICS OF GAAS POWER MESFETS AT LARGE-SIGNAL OPERATION, Electronics & communications in Japan. Part 2, Electronics, 77(11), 1994, pp. 82-88
HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI SIGE HETEROSTRUCTURE/
Authors: MIYATSUJI K UEDA D MASAKI K YAMAKAWA S HAMAGUCHI C
Citation: K. Miyatsuji et al., HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI SIGE HETEROSTRUCTURE/, JPN J A P 1, 33(4B), 1994, pp. 2378-2380
HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI SIGE HETEROSTRUCTURES/
Authors: MIYATSUJI K UEDA D MASAKI K YAMAKAWA S HAMAGUCHI C
Citation: K. Miyatsuji et al., HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI SIGE HETEROSTRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 772-774
Risultati: 1-10 |