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Results: 1-11 |
Results: 11
CHOOSING PROPER APPROXIMATION FOR SEMICONDUCTOR-DEVICE ANALYTICAL MODELING AT LOW-TEMPERATURE
Authors: MNATSAKANOV TT POMORTSEVA LI SCHRODER D SCHLOGL A
Citation: Tt. Mnatsakanov et al., CHOOSING PROPER APPROXIMATION FOR SEMICONDUCTOR-DEVICE ANALYTICAL MODELING AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 71-74
EFFECT OF HIGH INJECTION LEVEL PHENOMENA ON THE FEASIBILITY OF DIFFUSIVE APPROXIMATION IN SEMICONDUCTOR-DEVICE MODELING
Authors: MNATSAKANOV TT SCHRODER D SCHLOGL A
Citation: Tt. Mnatsakanov et al., EFFECT OF HIGH INJECTION LEVEL PHENOMENA ON THE FEASIBILITY OF DIFFUSIVE APPROXIMATION IN SEMICONDUCTOR-DEVICE MODELING, Solid-state electronics, 42(1), 1998, pp. 153-163
ELECTRON-HOLE SCATTERING IN P-TYPE SILICON WITH A LOW CHARGE-CARRIER INJECTION LEVEL
Authors: MNATSAKANOV TT POMORTSEVA LI SHUMAN VB
Citation: Tt. Mnatsakanov et al., ELECTRON-HOLE SCATTERING IN P-TYPE SILICON WITH A LOW CHARGE-CARRIER INJECTION LEVEL, Semiconductors, 31(7), 1997, pp. 707-709
INVESTIGATION INTO THE EFFECT OF AUGER RECOMBINATION ON CHARGE-CARRIER TRANSPORT AND STATIC CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES
Authors: MNATSAKANOV TT POMORTSEVA LI SHUMAN VB
Citation: Tt. Mnatsakanov et al., INVESTIGATION INTO THE EFFECT OF AUGER RECOMBINATION ON CHARGE-CARRIER TRANSPORT AND STATIC CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES, Solid-state electronics, 41(12), 1997, pp. 1871-1880
STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS
Authors: MNATSAKANOV TT POMORTSEVA LI SHUMAN VB
Citation: Tt. Mnatsakanov et al., STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS, Journal de physique. IV, 6(C3), 1996, pp. 81-86
EFFECT OF HEAVY DOPING AND HIGH INJECTION LEVELS ON THE PHOTOVOLTAIC EFFECT IN P(-N-N(+)-STRUCTURES WITH VERTICAL JUNCTIONS())
Authors: MNATSAKANOV TT SHUMAN VB
Citation: Tt. Mnatsakanov et Vb. Shuman, EFFECT OF HEAVY DOPING AND HIGH INJECTION LEVELS ON THE PHOTOVOLTAIC EFFECT IN P(-N-N(+)-STRUCTURES WITH VERTICAL JUNCTIONS()), Semiconductors, 30(7), 1996, pp. 680-682
PARAMETERS THAT CHARACTERIZE ELECTRON-HOLE SCATTERING IN SEMICONDUCTORS WHEN THE INJECTION LEVEL IS LOW
Authors: MNATSAKANOV TT POMORTSEVA LI SHUMAN VB GUK EG
Citation: Tt. Mnatsakanov et al., PARAMETERS THAT CHARACTERIZE ELECTRON-HOLE SCATTERING IN SEMICONDUCTORS WHEN THE INJECTION LEVEL IS LOW, Semiconductors, 29(9), 1995, pp. 808-812
INVESTIGATION OF THE EFFECT OF ELECTRON-HOLE SCATTERING ON CHARGE-CARRIER TRANSPORT IN SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES UNDER LOW INJECTION CONDITIONS
Authors: MNATSAKANOV TT GRESSEROV BN POMORTSEVA LI
Citation: Tt. Mnatsakanov et al., INVESTIGATION OF THE EFFECT OF ELECTRON-HOLE SCATTERING ON CHARGE-CARRIER TRANSPORT IN SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES UNDER LOW INJECTION CONDITIONS, Solid-state electronics, 38(1), 1995, pp. 225-233
MODELING OF ELECTRON-HOLE SCATTERING IN SEMICONDUCTOR-DEVICES - COMMENT
Authors: MNATSAKANOV TT
Citation: Tt. Mnatsakanov, MODELING OF ELECTRON-HOLE SCATTERING IN SEMICONDUCTOR-DEVICES - COMMENT, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2251-2253
ESTIMATE OF THE EFFECTIVE NARROWING OF THE BAND-GAP IN HEAVILY-DOPED LAYERS OF SILICON STRUCTURES
Authors: MNATSAKANOV TT POMORTSEVA LI YAKOVLEV DG
Citation: Tt. Mnatsakanov et al., ESTIMATE OF THE EFFECTIVE NARROWING OF THE BAND-GAP IN HEAVILY-DOPED LAYERS OF SILICON STRUCTURES, Semiconductors, 28(11), 1994, pp. 1059-1061
PARAMETERS OF FORCE SILICON DIODES IRRADI ATED WITH LOW-ENERGY ELECTRONS
Authors: ARINUSHKIN VN BERMAN LS GEIFMAN EM KONYUKHOV AV LOMASOV VN MNATSAKANOV TT REMENYUK AD
Citation: Vn. Arinushkin et al., PARAMETERS OF FORCE SILICON DIODES IRRADI ATED WITH LOW-ENERGY ELECTRONS, Zurnal tehniceskoj fiziki, 63(8), 1993, pp. 41-45
Risultati: 1-11 |