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Results: 1-19 |
Results: 19
POSITIVE CHARGE GENERATION AT A SIO2 SI INTERFACE DUE TO BOMBARDMENT WITH METASTABLE ATOMS/
Authors: ONO T ITABASHI N OCHIAI I YAMAMOTO S MOCHIJI K
Citation: T. Ono et al., POSITIVE CHARGE GENERATION AT A SIO2 SI INTERFACE DUE TO BOMBARDMENT WITH METASTABLE ATOMS/, JPN J A P 1, 36(11), 1997, pp. 6718-6721
OPTICAL-EMISSION SPECTROSCOPY OF SPUTTERED AL ATOMS FROM AL AND AL2O3SURFACES INTERACTED WITH ARQ-9)( (Q = 1)
Authors: MOTOHASHI K TSURUBUCHI S SHIMIZU H MOCHIJI K TANUMA H KOBAYASHI N
Citation: K. Motohashi et al., OPTICAL-EMISSION SPECTROSCOPY OF SPUTTERED AL ATOMS FROM AL AND AL2O3SURFACES INTERACTED WITH ARQ-9)( (Q = 1), Physica scripta. T, T73, 1997, pp. 329-331
EXTRACTION OF TRAPPED IONS FROM THE TOKYO ELECTRON-BEAM ION-TRAP
Authors: MOTOHASHI K ASADA J CURRELL FJ FUKAMI T HIRAYAMA T MOCHIJI K NAKAMURA N NOJIKAWA E OKAZAKI K OHTANI S SAKURAI M SHIRAISHI H TSURUBUCHI S WATANABE H
Citation: K. Motohashi et al., EXTRACTION OF TRAPPED IONS FROM THE TOKYO ELECTRON-BEAM ION-TRAP, Physica scripta. T, T73, 1997, pp. 368-370
SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY STUDY OF GRAPHITE DEFECTS PRODUCED BY BOMBARDING WITH HIGHLY-CHARGED IONS
Authors: MOCHIJI K YAMAMOTO S SHIMIZU H OHTANI S SEGUCHI T KOBAYASHI N
Citation: K. Mochiji et al., SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY STUDY OF GRAPHITE DEFECTS PRODUCED BY BOMBARDING WITH HIGHLY-CHARGED IONS, Journal of applied physics, 82(12), 1997, pp. 6037-6040
SELECTIVE GENERATION OF DEFECTS IN POLYDIACETYLENE LANGMUIR-BLODGETT-FILMS ON SI SUBSTRATES AS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: YAMAMOTO S OGAWA T MOCHIJI K TOMIOKA Y
Citation: S. Yamamoto et al., SELECTIVE GENERATION OF DEFECTS IN POLYDIACETYLENE LANGMUIR-BLODGETT-FILMS ON SI SUBSTRATES AS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY, JPN J A P 1, 35(10), 1996, pp. 5453-5456
SURFACE-REACTION WITH CORE ELECTRON-EXCITATION
Authors: MOCHIJI K
Citation: K. Mochiji, SURFACE-REACTION WITH CORE ELECTRON-EXCITATION, Optoelectronics, 11(1), 1996, pp. 81-90
DESORPTION INDUCED BY ELECTRONIC POTENTIAL-ENERGY OF MULTIPLY-CHARGEDIONS
Authors: MOCHIJI K ITABASHI N YAMAMOTO S SHIMIZU H OHTANI S KATO Y TANUMA H OKUNO K KOBAYASHI N
Citation: K. Mochiji et al., DESORPTION INDUCED BY ELECTRONIC POTENTIAL-ENERGY OF MULTIPLY-CHARGEDIONS, Surface science, 358(1-3), 1996, pp. 673-677
THERMAL AND ION-INDUCED REACTIONS ON A CHLORINE-ADSORBED GAAS(100) SURFACE STUDIED BY METASTABLE-ATOM DEEXCITATION ELECTRON-SPECTROSCOPY
Authors: ITABASHI N ONO T OCHIAI I YAMAMOTO S MOCHIJI K
Citation: N. Itabashi et al., THERMAL AND ION-INDUCED REACTIONS ON A CHLORINE-ADSORBED GAAS(100) SURFACE STUDIED BY METASTABLE-ATOM DEEXCITATION ELECTRON-SPECTROSCOPY, JPN J A P 1, 34(7A), 1995, pp. 3631-3636
DESORPTION OF GA AND AS ATOMS FROM GAAS SURFACE-INDUCED BY SLOW MULTIPLY-CHARGED AR IONS
Authors: ITABASHI N MOCHIJI K SHIMIZU H OHTANI S KATO Y TANUMA H KOBAYASHI N
Citation: N. Itabashi et al., DESORPTION OF GA AND AS ATOMS FROM GAAS SURFACE-INDUCED BY SLOW MULTIPLY-CHARGED AR IONS, JPN J A P 1, 34(12B), 1995, pp. 6861-6865
TRAPPING AND LOW-ENERGY EXTRACTION OF PHOTODISSOCIATED IONS OF SF6
Authors: YAMAMOTO S MOCHIJI K MIKAMI N
Citation: S. Yamamoto et al., TRAPPING AND LOW-ENERGY EXTRACTION OF PHOTODISSOCIATED IONS OF SF6, JPN J A P 2, 34(3B), 1995, pp. 393-395
EXCIMER-LASER ASSISTED ETCHING OF ALGAAS AND GAAS
Authors: TAKATANI S YAMAMOTO S TAKAZAWA H MOCHIJI K
Citation: S. Takatani et al., EXCIMER-LASER ASSISTED ETCHING OF ALGAAS AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2340-2343
SURFACE-REACTION INDUCED BY MULTIPLY-CHARGED IONS
Authors: MOCHIJI K ITABASHI N YAMAMOTO S OCHIAI I OKUNO K
Citation: K. Mochiji et al., SURFACE-REACTION INDUCED BY MULTIPLY-CHARGED IONS, JPN J A P 1, 33(12B), 1994, pp. 7108-7111
PHOTODISSOCIATION OF SF6 NEAR THE F 1S ABSORPTION-EDGE
Authors: MOCHIJI K LEE K MA CI KIM DY MAHALINGAM M HANSON DM
Citation: K. Mochiji et al., PHOTODISSOCIATION OF SF6 NEAR THE F 1S ABSORPTION-EDGE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 216-218
PHOTON-STIMULATED ION DESORPTION FROM CHLORINE-ADSORBED GAAS-SURFACES
Authors: ITABASHI N OCHIAI I YAMAMOTO S ONO T MOCHIJI K
Citation: N. Itabashi et al., PHOTON-STIMULATED ION DESORPTION FROM CHLORINE-ADSORBED GAAS-SURFACES, Applied surface science, 80, 1994, pp. 67-71
PHOTON-STIMULATED ION DESORPTION AND PHOTOELECTRON-SPECTROSCOPY OF A CHLORINE-ADSORBED GAAS(111)B SURFACE
Authors: MOCHIJI K OCHIAI I YAMAMOTO S TAKATANI S
Citation: K. Mochiji et al., PHOTON-STIMULATED ION DESORPTION AND PHOTOELECTRON-SPECTROSCOPY OF A CHLORINE-ADSORBED GAAS(111)B SURFACE, Surface science, 311(1-2), 1994, pp. 120000677-120000681
LOW-TEMPERATURE SYNCHROTRON-RADIATION-EXCITED ETCHING OF SILICON DIOXIDE WITH SULFUR-HEXAFLUORIDE ADSORPTION
Authors: OGAWA T MOCHIJI K OCHIAI I YAMAMOTO S TANAKA K
Citation: T. Ogawa et al., LOW-TEMPERATURE SYNCHROTRON-RADIATION-EXCITED ETCHING OF SILICON DIOXIDE WITH SULFUR-HEXAFLUORIDE ADSORPTION, Journal of applied physics, 75(9), 1994, pp. 4680-4685
PHOTON-STIMULATED ION DESORPTION FROM SEMICONDUCTOR SURFACES
Authors: MOCHIJI K OCHIAI I OGAWA T YAMAMOTO S ITABASHI N LEE K HANSON DM
Citation: K. Mochiji et al., PHOTON-STIMULATED ION DESORPTION FROM SEMICONDUCTOR SURFACES, JPN J A P 1, 32(12B), 1993, pp. 6173-6177
SYNCHROTRON-RADIATION IN SEMICONDUCTOR FI ELD .3. PHOTON-STIMULATED ION DESORPTION
Authors: MOCHIJI K
Citation: K. Mochiji, SYNCHROTRON-RADIATION IN SEMICONDUCTOR FI ELD .3. PHOTON-STIMULATED ION DESORPTION, Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 61(10), 1993, pp. 1161-1163
PHOTON-STIMULATED DESORPTION FROM CHEMICALLY TREATED SI SURFACES
Authors: OCHIAI I OGAWA T TAKAKUWA Y MOCHIJI K
Citation: I. Ochiai et al., PHOTON-STIMULATED DESORPTION FROM CHEMICALLY TREATED SI SURFACES, Surface science, 287, 1993, pp. 175-177
Risultati: 1-19 |