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Results: 1-25/45
Authors:
BREUKER D
MONCH W
PETERMANN F
KIRSTEN D
LOOS U
Citation: D. Breuker et al., QUALITY-OF-LIFE AND COPING WITH ILLNESS - SELF-HELP INITIATIVES FOR PATIENTS WITH SARCOIDOSIS, Zeitschrift fur klinische Psychologie, Psychiatrie und Psychotherapie, 46(4), 1998, pp. 304-315
Authors:
EYCKELER M
MONCH W
KAMPEN TU
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: M. Eyckeler et al., NEGATIVE ELECTRON-AFFINITY OF CESIATED P-GAN(0001) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2224-2228
Authors:
VANELSBERGEN V
ROHLEDER M
MONCH W
Citation: V. Vanelsbergen et al., FORMATION OF NITRIDE LAYERS ON 6H-SIC SURFACES, Applied surface science, 134(1-4), 1998, pp. 197-201
Authors:
KAMPEN TU
EYCKELER M
MONCH W
Citation: Tu. Kampen et al., ELECTRONIC-PROPERTIES OF CESIUM-COVERED GAN(0001) SURFACES, Applied surface science, 123, 1998, pp. 28-32
Authors:
GRABOWSKI SP
KAMPEN TU
NIENHAUS H
MONCH W
Citation: Sp. Grabowski et al., VIBRATIONAL PROPERTIES OF GAN(0001) SURFACES, Applied surface science, 123, 1998, pp. 33-37
Authors:
VANELSBERGEN V
NIENHAUS H
MONCH W
Citation: V. Vanelsbergen et al., DYNAMICAL PROPERTIES OF 3C-SIC, 4H-SIC, AND 6H-SIC SURFACES, Applied surface science, 123, 1998, pp. 38-42
Authors:
MONCH W
Citation: W. Monch, COMMENT ON A STUDY ON BARRIER HEIGHT IN AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2 - BY KHAN,M.R.H., NAKAYAMA,H., DETCHPROHM,T., HIRAMATSU,K. AND SAWAKI,N. IN SOLID-STATE ELECTRONICS, 1997 VOL 41, PG 287, Solid-state electronics, 42(3), 1998, pp. 470-471
Authors:
MONCH W
Citation: W. Monch, VALENCE-BAND OFFSETS AND SCHOTTKY-BARRIER HEIGHTS OF LAYERED SEMICONDUCTORS EXPLAINED BY INTERFACE-INDUCED GAP STATES, Applied physics letters, 72(15), 1998, pp. 1899-1901
Authors:
SCHMITSDORF RF
KAMPEN TU
MONCH W
Citation: Rf. Schmitsdorf et al., EXPLANATION OF THE LINEAR CORRELATION BETWEEN BARRIER HEIGHTS AND IDEALITY FACTORS OF REAL METAL-SEMICONDUCTOR CONTACTS BY LATERALLY NONUNIFORM SCHOTTKY BARRIERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1221-1226
Authors:
TOPF M
MEISTER D
DIRNSTORFER I
STEUDE G
FISCHER S
MEYER BK
KRTSCHIL A
WITTE H
CHRISTEN J
KAMPEN TU
MONCH W
Citation: M. Topf et al., ELECTRICAL AND OPTICAL-PROPERTIES OF P-SIC N-GAN HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 302-306
Authors:
VANELSBERGEN V
JANZEN O
MONCH W
Citation: V. Vanelsbergen et al., OXIDATION OF CLEAN AND H-TERMINATED SIC SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 366-369
Authors:
MONCH W
Citation: W. Monch, ELEMENTARY CALCULATION OF THE BRANCH-POINT ENERGY IN THE CONTINUUM OFINTERFACE-INDUCED GAP STATES, Applied surface science, 117, 1997, pp. 380-387
Authors:
KAMPEN TU
MONCH W
Citation: Tu. Kampen et W. Monch, BARRIER HEIGHTS OF GAN SCHOTTKY CONTACTS, Applied surface science, 117, 1997, pp. 388-393
Authors:
MONCH W
Citation: W. Monch, MULTISPLITTING METHOD WITH REGULAR DECOMP OSITIONS FOR NONLINEAR-SYSTEMS OF EQUATIONS, Zeitschrift fur angewandte Mathematik und Mechanik, 77, 1997, pp. 623-624
Authors:
MONCH W
Citation: W. Monch, HYDROGEN-MODIFICATION OF ELECTRONIC SURFACE, BULK, AND INTERFACE PROPERTIES OF SILICON, Physica status solidi. a, Applied research, 159(1), 1997, pp. 25-37
Authors:
NIENHAUS H
GRABOWSKI SP
MONCH W
Citation: H. Nienhaus et al., HYDROGEN STRETCHING VIBRATIONS AT GAAS(110) AND INP(110) SURFACES - AN ELECTRON-ENERGY-LOSS FINE-STRUCTURE STUDY, Physica status solidi. a, Applied research, 159(1), 1997, pp. 175-183
Authors:
MONCH W
Citation: W. Monch, CALCULATION OF VALENCE-BAND OFFSETS OF LATTICE-MATCHED GAINTIP INP HETEROSTRUCTURES AND OF SCHOTTKY-BARRIER HEIGHTS OF METAL-GAINTIP CONTACTS/, Applied physics letters, 71(9), 1997, pp. 1231-1233
Authors:
MONCH W
Citation: W. Monch, ELECTRONIC-PROPERTIES OF IDEAL AND INTERFACE-MODIFIED METAL-SEMICONDUCTOR INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2985-2993
Authors:
MONCH W
Citation: W. Monch, CHEMICAL TRENDS OF BARRIER HEIGHTS IN METAL-SEMICONDUCTOR CONTACTS - ON THE THEORY OF THE SLOPE PARAMETER, Applied surface science, 92, 1996, pp. 367-371
Authors:
NIENHAUS H
MONCH W
Citation: H. Nienhaus et W. Monch, FLUORINE ADSORPTION ON GAAS(110) SURFACES AND THE ONSET OF ETCHING AFTER XEF2 EXPOSURES, Applied surface science, 104, 1996, pp. 95-100
Authors:
NIENHAUS H
GRABOWSKI SP
MONCH W
Citation: H. Nienhaus et al., VIBRATIONAL-MODES OF HYDROGEN AND DEUTERIUM AT INP(110) SURFACES, Surface science, 368, 1996, pp. 196-201
Authors:
VANELSBERGEN V
KAMPEN TU
MONCH W
Citation: V. Vanelsbergen et al., SURFACE-ANALYSIS OF 6H-SIC, Surface science, 365(2), 1996, pp. 443-452
Authors:
GRABOWSKI SP
NIENHAUS H
MONCH W
Citation: Sp. Grabowski et al., BENDING AND STRETCHING VIBRATIONS OF HYDROGEN AND DEUTERIUM AT GAAS(110) SURFACES, Surface science, 352, 1996, pp. 310-314
Authors:
SCHMITSDORF RF
MONCH W
Citation: Rf. Schmitsdorf et W. Monch, OXIDATION OF SILVER-PASSIVATED SI(111) - AG-(ROOT-3X-ROOT-3)R30-DEGREES, Surface science, 352, 1996, pp. 322-326
Authors:
MONCH W
Citation: W. Monch, EMPIRICAL TIGHT-BINDING CALCULATION OF THE BRANCH-POINT ENERGY OF THECONTINUUM OF INTERFACE-INDUCED GAP STATES, Journal of applied physics, 80(9), 1996, pp. 5076-5082