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Results: 1-17 |
Results: 17
Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si
Authors: Han, JP GUo, X Broadbridge, CC Ma, TP Ils, A Cantoni, M Sallese, JM Fazan, P
Citation: Jp. Han et al., Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si, INTEGR FERR, 34(1-4), 2001, pp. 1505-1512
Body explorer 2.0
Authors: Ma, TP
Citation: Tp. Ma, Body explorer 2.0, CLIN ANAT, 14(5), 2001, pp. 392-394
Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric
Authors: Lu, Q Yeo, YC Yang, KJ Lin, R Polishchuk, I King, TJ Hu, CM Song, SC Luan, HF Kwong, DL Guo, X Luo, ZJ Wang, XW Ma, TP
Citation: Q. Lu et al., Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric, IEEE ELEC D, 22(7), 2001, pp. 324-326
High-quality oxide/nitride/oxide gate insulator for GaN MIS structures
Authors: Gaffey, B Guido, LJ Wang, XW Ma, TP
Citation: B. Gaffey et al., High-quality oxide/nitride/oxide gate insulator for GaN MIS structures, IEEE DEVICE, 48(3), 2001, pp. 458-464
Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV
Authors: Melik-Martirosian, A Ma, TP
Citation: A. Melik-martirosian et Tp. Ma, Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV, IEEE DEVICE, 48(10), 2001, pp. 2303-2309
Temperature dependence of gate currents in thin Ta2O5 and TiO2 films
Authors: Luo, ZJ Guo, X Ma, TP Tamagawa, T
Citation: Zj. Luo et al., Temperature dependence of gate currents in thin Ta2O5 and TiO2 films, APPL PHYS L, 79(17), 2001, pp. 2803-2804
Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration
Authors: Tseng, HH Veteran, J Tobin, PJ Mogab, J Tsui, PGY Wang, V Khare, M Wang, XW Ma, TP Hobbs, C Hegde, R Hartig, M Kenig, G Blumenthal, R Cotton, R Kaushik, V Tamagawa, T Halpern, BL Cui, GJ Schmitt, JJ
Citation: Hh. Tseng et al., Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration, MAT SC S PR, 3(3), 2000, pp. 173-178
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
Authors: Lu, W Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J VAC SCI B, 18(6), 2000, pp. 3488-3492
Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers
Authors: Ils, A Cantoni, M Sallese, JM Fazan, P Han, JP Guo, X Ma, TP
Citation: A. Ils et al., Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers, J VAC SCI B, 18(4), 2000, pp. 1915-1918
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Authors: Yeo, YC Lu, Q Lee, WC King, TJ Hu, CM Wang, XW Guo, X Ma, TP
Citation: Yc. Yeo et al., Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 21(11), 2000, pp. 540-542
High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's
Authors: Lu, W Kuliev, A Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's, IEEE DEVICE, 47(8), 2000, pp. 1645-1652
High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric
Authors: Wang, XW Luo, ZJ Ma, TP
Citation: Xw. Wang et al., High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric, IEEE DEVICE, 47(2), 2000, pp. 458-463
Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
Authors: Han, JP Ma, TP
Citation: Jp. Han et Tp. Ma, Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM), INTEGR FERR, 27(1-4), 1999, pp. 1053-1062
P-type SiGe transistors with low gate leakage using SiN gate dielectric
Authors: Lu, W Wang, XW Hammond, R Kuliev, A Koester, S Chu, JO Ismail, K Ma, TP Adesida, I
Citation: W. Lu et al., P-type SiGe transistors with low gate leakage using SiN gate dielectric, IEEE ELEC D, 20(10), 1999, pp. 514-516
Transconductance in nitride-gate or oxynitride-gate transistors
Authors: Khare, M Wang, XW Ma, TP
Citation: M. Khare et al., Transconductance in nitride-gate or oxynitride-gate transistors, IEEE ELEC D, 20(1), 1999, pp. 57-59
Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics
Authors: Shi, Y Wang, XW Ma, TP
Citation: Y. Shi et al., Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics, IEEE DEVICE, 46(2), 1999, pp. 362-368
Productivity in wood machining processes - a question of simple economics?
Authors: Ratnasingam, J Ma, TP Perkins, MC
Citation: J. Ratnasingam et al., Productivity in wood machining processes - a question of simple economics?, HOLZ ROH WE, 57(1), 1999, pp. 51-56
Risultati: 1-17 |