AAAAAA

   
Results: 1-14 |
Results: 14
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
Authors: Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Kayander, IN Kondrat'eva, EY Livshits, DA Tarasov, IS Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate, SEMICONDUCT, 34(1), 2000, pp. 119-121
Quantum-dot injection heterolaser with 3.3 W output power
Authors: Kovsh, AR Livshits, DA Zhukov, AE Egorov, AY Maksimov, MV Ustinov, VM Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Quantum-dot injection heterolaser with 3.3 W output power, TECH PHYS L, 25(6), 1999, pp. 438-439
Gain characteristics of quantum-dot injection lasers
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Egorov, AY Ledentsov, NN Tsatsul'nikov, AF Maksimov, MV Zaitsev, SV Shernyakov, YM Lunev, AV Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Gain characteristics of quantum-dot injection lasers, SEMICONDUCT, 33(9), 1999, pp. 1013-1015
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
Authors: Tsatsul'nikov, AF Bedarev, DA Volovik, BV Ivanov, SV Maksimov, MV Musikhin, YG Ledentsov, NN Mel'tser, BY Solov'ev, VA Kop'ev, PS Chernyshov, AY Belousov, MV
Citation: Af. Tsatsul'Nikov et al., Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface, SEMICONDUCT, 33(8), 1999, pp. 886-888
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Authors: Volovik, BV Tsatsul'nikov, AF Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Suvorova, AA Ustinov, VM Kop'ev, PS Alferov, ZI Bimberg, D Werner, P
Citation: Bv. Volovik et al., Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands, SEMICONDUCT, 33(8), 1999, pp. 901-905
Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures
Authors: Kovsh, AR Zhukov, AE Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maksimov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kondrat'eva, EY Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures, SEMICONDUCT, 33(8), 1999, pp. 929-932
Investigation of MOVPE-grown GaN layers doped with As atoms
Authors: Tsatsul'nikov, AF Ber, BY Kartashova, AP Kudryavtsev, YA Ledentsov, NN Lundin, VV Maksimov, MV Sakharov, AV Usikov, AS Alferov, ZI Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
Authors: Tsatsul'nikov, AF Volovik, BV Ledentsov, NN Maksimov, MV Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Kop'ev, PS Alferov, ZI Kozin, IE Belousov, MV Bimberg, D
Citation: Af. Tsatsul'Nikov et al., Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host, SEMICONDUCT, 33(4), 1999, pp. 467-470
Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Egorov, AY Maleev, NA Ustinov, VM Volovik, BV Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Shernyakov, YM Lunev, AV Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI
Citation: Ae. Zhukov et al., Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates, SEMICONDUCT, 33(2), 1999, pp. 153-156
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
Authors: Zhukov, AE Egorov, AY Kovsh, AR Ustinov, VM Ledentsov, NN Maksimov, MV Tsatsul'nikov, AF Volovik, BV Kop'ev, PS Alferov, ZI
Citation: Ae. Zhukov et al., Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix, SEMICONDUCT, 33(2), 1999, pp. 165-168
Gain in injection lasers based on self-organized quantum dots
Authors: Kovsh, AR Zhukov, AE Egorov, AY Ustinov, VM Ledentsov, NN Maksimov, MV Tsatsul'nikov, AF Kop'ev, PS
Citation: Ar. Kovsh et al., Gain in injection lasers based on self-organized quantum dots, SEMICONDUCT, 33(2), 1999, pp. 184-191
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Authors: Zhen, Z Bedarev, DA Volovik, BV Ledentsov, NN Lunev, AV Maksimov, MV Tsatsul'nikov, AF Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Kop'ev, PS
Citation: Z. Zhen et al., Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix, SEMICONDUCT, 33(1), 1999, pp. 80-84
Self-organized InAs quantum dots in a silicon matrix
Authors: Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Maksimov, MV Cirlin, GE Ledentsov, NN Bimberg, D Werner, P Alferov, ZI
Citation: Ay. Egorov et al., Self-organized InAs quantum dots in a silicon matrix, J CRYST GR, 202, 1999, pp. 1202-1204
Risultati: 1-14 |