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Results: 1-25 | 26-33
Results: 1-25/33
1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots
Authors: Zhukov, AE Volovik, BV Mikhrin, SS Maleev, NA Tsatsul'nikov, AF Nikitina, EV Kayander, IN Ustinov, VM Ledentsov, NN
Citation: Ae. Zhukov et al., 1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots, TECH PHYS L, 27(9), 2001, pp. 734-736
Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Vasil'ev, AP Ustinov, VM Ledentsov, NN Alferov, ZI
Citation: Na. Maleev et al., Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates, SEMICONDUCT, 35(7), 2001, pp. 847-853
1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them
Authors: Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation: Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
Authors: Odnoblyudov, VA Kovsh, AR Zhukov, AE Maleev, NA Semenova, ES Ustinov, VM
Citation: Va. Odnoblyudov et al., Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy, SEMICONDUCT, 35(5), 2001, pp. 533-538
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Authors: Maleev, NA Krestnikov, IL Kovsh, AR Sakharov, AV Zhukov, AE Ustinov, VM Mikhrin, SS Passenberg, W Pawlowski, E Moller, C Tsatsulnikov, AF Kunzel, H Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
Authors: Krestnikov, IL Maleev, NA Sakharov, AV Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Lott, JA
Citation: Il. Krestnikov et al., 1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices, SEMIC SCI T, 16(10), 2001, pp. 844-848
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Authors: Maleev, NA Sakharov, AV Moeller, C Krestnikov, IL Kovsh, AR Mikhrin, SS Zhukov, AE Ustinov, VM Passenberg, W Pawlowski, E Kunezel, H Tsatsul'nikov, AF Ledentsov, NN Bimberg, D Alferov, ZI
Citation: Na. Maleev et al., 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots, J CRYST GR, 227, 2001, pp. 1146-1150
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range
Authors: Maleev, NA Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Bedarev, DA Volovik, BV Krestnikov, IL Kayander, IN Odnoblyudov, VA Suvorova, AA Tsatsul'nikov, AF Shernyakov, YM Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range, SEMICONDUCT, 34(5), 2000, pp. 594-597
Power conversion efficiency of quantum dot laser diodes
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Odnoblyudov, VA Ustinov, VM Shernyakov, YM Kondrat'eva, EY Livshits, DA Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Power conversion efficiency of quantum dot laser diodes, SEMICONDUCT, 34(5), 2000, pp. 609-613
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
Authors: Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Kayander, IN Kondrat'eva, EY Livshits, DA Tarasov, IS Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate, SEMICONDUCT, 34(1), 2000, pp. 119-121
Long-wavelength quantum dot lasers on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Volovik, BV Musikhin, YG Shernyakov, YM Kondat'eva, EY Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength quantum dot lasers on GaAs substrates, NANOTECHNOL, 11(4), 2000, pp. 397-400
InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices
Authors: Maximov, MV Krestnikov, IL Shernyakov, YM Zhukov, AE Maleev, NA Musikhin, YG Ustinov, VM Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices, J ELEC MAT, 29(5), 2000, pp. 487-493
Kinetic approach to barrier capacitance calculation and its application tomodelling of microstructures with metal-semiconductor junctions
Authors: Kokorev, MF Maleev, NA
Citation: Mf. Kokorev et Na. Maleev, Kinetic approach to barrier capacitance calculation and its application tomodelling of microstructures with metal-semiconductor junctions, SEMIC SCI T, 15(3), 2000, pp. 301-307
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Shernyakov, YM Kaiander, IN Kondrat'eva, EY Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Musikhin, YG Kop'ev, PS Alferov, ZI Heitz, R Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Kop'ev, PS Alferov, ZI Vorob'ev, LE Firsov, DA Suvorova, AA Soshnikov, IP Werner, P Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates, MICROELEC J, 31(1), 2000, pp. 1-7
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m
Authors: Lott, JA Ledentsov, NN Ustinov, VM Maleev, NA Zhukov, AE Kovsh, AR Maximov, MV Volovik, BV Alferov, ZI Bimberg, D
Citation: Ja. Lott et al., InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m, ELECTR LETT, 36(16), 2000, pp. 1384-1385
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Authors: Volovik, BV Tsatsul'nikov, AF Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Suvorova, AA Ustinov, VM Kop'ev, PS Alferov, ZI Bimberg, D Werner, P
Citation: Bv. Volovik et al., Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands, SEMICONDUCT, 33(8), 1999, pp. 901-905
Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures
Authors: Kovsh, AR Zhukov, AE Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maksimov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kondrat'eva, EY Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures, SEMICONDUCT, 33(8), 1999, pp. 929-932
InGaAs GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 mu m
Authors: Maleev, NA Zhukov, AE Kovsh, AR Egorov, AY Ustinov, VM Krestnikov, IL Lunev, AV Sakharov, AV Volovik, BV Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InGaAs GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 mu m, SEMICONDUCT, 33(5), 1999, pp. 586-589
Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Volkov, VV Kokorev, MF
Citation: Na. Maleev et al., Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes, SEMICONDUCT, 33(3), 1999, pp. 345-349
Risultati: 1-25 | 26-33