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Results:
1-17
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Results: 17
Authors:
Mao, LF
Zhang, HQ
Wei, JL
Mu, FC
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(7), 2001, pp. 1081-1084
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(5), 2001, pp. 773-776
Authors:
Mu, FC
Mao, LF
Wei, JL
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode, SOL ST ELEC, 45(3), 2001, pp. 385-389
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 531-534
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current, SOL ST COMM, 119(2), 2001, pp. 67-71
Authors:
Xu, MZ
Tan, CH
Mao, LF
Citation: Mz. Xu et al., The double level calculation of oxygen related donor states in Si and SiO2, SOL ST COMM, 117(6), 2001, pp. 365-367
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures, MICROEL REL, 41(6), 2001, pp. 927-931
Authors:
Mao, LF
Yang, Y
Wei, JL
Zhang, HQ
Xu, MZ
Tan, CH
Citation: Lf. Mao et al., Effect of SiO2/Si interface roughness on gate current, MICROEL REL, 41(11), 2001, pp. 1903-1907
Authors:
Mao, LF
Tan, CH
Xu, MZ
Wei, JL
Citation: Lf. Mao et al., Study of Fowler-Nordheim tunneling current oscillations in ultra-thin insulator MOS structure by interference method, ACT PHY C E, 49(5), 2000, pp. 974-982
Authors:
Wang, BW
Ma, XB
Xu, GH
Mao, LF
Citation: Bw. Wang et al., Optimization of cyclical process for CO coupling regeneration reactions, COMPUT CH E, 24(2-7), 2000, pp. 1337-1341
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Study of Fowler-Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method, SOL ST ELEC, 44(8), 2000, pp. 1501-1506
Authors:
Wei, JL
Mao, LF
Xu, MZ
Tan, CH
Duan, XR
Citation: Jl. Wei et al., Stress-induced high-field gate leakage current in ultra-thin gate oxide, SOL ST ELEC, 44(6), 2000, pp. 977-980
Authors:
Wei, JL
Mao, LF
Xu, MZ
Tan, CH
Citation: Jl. Wei et al., Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures, SOL ST ELEC, 44(11), 2000, pp. 2021-2025
Authors:
Mao, LF
Wei, JL
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Determination of the effective mass of ballistic electrons in thin siliconoxides films using tunneling current oscillations, SOL ST COMM, 114(7), 2000, pp. 383-387
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Thickness measurements for ultrathin-film insulator metal-oxide-semiconductor structures using Fowler-Nordheim tunneling current oscillations, J APPL PHYS, 88(11), 2000, pp. 6560-6563
Authors:
Mao, LF
Chen, D
Cai, B
Kong, QP
Citation: Lf. Mao et al., Torsional vibration frequency and internal friction under tensile stress in thin ribbon specimens, PHYS ST S-A, 172(2), 1999, pp. 363-371
Authors:
Wang, XQ
Mao, LF
Citation: Xq. Wang et Lf. Mao, Many-body effects on the low-lying energy levels of three-electron quantumdots in a magnetic field, J PHYS-COND, 10(48), 1998, pp. 11025-11031
Risultati:
1-17
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