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Results:
1-20
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Results: 20
Authors:
Sugihara, K
Miura, N
Furukawa, T
Nakahata, T
Oishi, T
Maruno, S
Abe, Y
Citation: K. Sugihara et al., A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned pocket implantation which takes advantage of elevated source/drain configurations, JPN J A P 1, 40(4B), 2001, pp. 2611-2615
Authors:
Maruno, S
Furukawa, T
Nakahata, T
Abe, Y
Citation: S. Maruno et al., A chemical mechanism for determining the influence of boron on silicon epitaxial growth, JPN J A P 1, 40(11), 2001, pp. 6202-6207
Authors:
Furukawa, T
Nakahata, T
Maruno, S
Tanimura, J
Tokuda, Y
Satoh, S
Citation: T. Furukawa et al., Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition, JPN J A P 2, 40(10A), 2001, pp. L1051-L1053
Authors:
Kawaguchi, T
Hanaichi, T
Hasegawa, M
Maruno, S
Citation: T. Kawaguchi et al., Dextran-magnetite complex: conformation of dextran chains and stability ofsolution, J MAT S-M M, 12(2), 2001, pp. 121-127
Authors:
Sakamoto, I
Chen, GF
Ohara, S
Harima, H
Maruno, S
Citation: I. Sakamoto et al., De Haas-van Alphen effect in LuAl3, J ALLOY COM, 323, 2001, pp. 623-627
Authors:
Nakahata, T
Sugihara, K
Furukawa, T
Nishioka, Y
Maruno, S
Abe, Y
Tokuda, Y
Satoh, S
Citation: T. Nakahata et al., Improvement of alignment tolerance against contact hole etching by growingof underlying silicon-selective epitaxial layer, MICROEL ENG, 56(3-4), 2001, pp. 281-287
Authors:
Yamada, K
Imamura, K
Itoh, H
Iwata, H
Maruno, S
Citation: K. Yamada et al., Bone bonding behavior of the hydroxyapatite containing glass-titanium composite prepared by the Cullet method, BIOMATERIAL, 22(16), 2001, pp. 2207-2214
Authors:
Nakahata, T
Yamamoto, K
Maruno, S
Inagaki, T
Sugihara, K
Abe, Y
Miyamoto, A
Ozeki, T
Citation: T. Nakahata et al., Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition, J CRYST GR, 233(1-2), 2001, pp. 82-87
Authors:
Nakahata, T
Yamamoto, K
Tanimura, J
Inagaki, T
Furukawa, T
Maruno, S
Tokuda, Y
Miyamoto, A
Satoh, S
Kiyama, H
Citation: T. Nakahata et al., Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth, J CRYST GR, 226(4), 2001, pp. 443-450
Authors:
Miura, N
Abe, Y
Sugihara, K
Oishi, T
Furukawa, T
Nakahata, T
Shiozawa, K
Maruno, S
Citation: N. Miura et al., Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs, IEEE DEVICE, 48(9), 2001, pp. 1969-1974
Authors:
Sugihara, K
Miura, N
Furukawa, T
Nakahata, T
Nishioka, Y
Yamakawa, S
Abe, Y
Maruno, S
Tokuda, Y
Citation: K. Sugihara et al., Parasitic resistance reduction in deep submicron dual-gate transistors with partially elevated source/drain extension regions fabricated by complementary metal-oxide-semiconductor technologies, JPN J A P 1, 39(2A), 2000, pp. 387-389
Authors:
Maruno, S
Nakahata, T
Furukawa, T
Tokuda, Y
Satoh, S
Yamamoto, K
Inagaki, T
Kiyama, H
Citation: S. Maruno et al., Selective epitaxial growth by ultrahigh-vacuum chemical vapor deposition with alternating gas supply of Si2H6 and Cl-2, JPN J A P 1, 39(11), 2000, pp. 6139-6142
Authors:
Maruno, S
Murao, T
Kuroiwa, T
Mikami, N
Tomikawa, A
Nagata, M
Yasue, T
Koshikawa, T
Citation: S. Maruno et al., Effects of oxygen vacancy diffusion on leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitor, JPN J A P 2, 39(5A), 2000, pp. L416-L419
Authors:
Nakahata, T
Sugihara, K
Furukawa, T
Yamakawa, S
Maruno, S
Tokuda, Y
Yamamoto, K
Inagaki, T
Kiyama, H
Citation: T. Nakahata et al., Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition, MAT SCI E B, 68(3), 2000, pp. 171-174
Authors:
Arikawa, M
Maruno, S
Citation: M. Arikawa et S. Maruno, Improvement of tool-using skills through understanding mechanical laws andusing shop equipment, JPN J EDU P, 48(4), 2000, pp. 501-511
Authors:
Furukawa, T
Nakahata, T
Maruno, S
Tokuda, Y
Satoh, S
Citation: T. Furukawa et al., Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition, JPN J A P 1, 38(9A), 1999, pp. 5046-5047
Authors:
Nakahata, T
Maruno, S
Yamakawa, S
Furukawa, T
Tokuda, Y
Satoh, S
Citation: T. Nakahata et al., Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition, JPN J A P 1, 38(7A), 1999, pp. 4045-4046
Authors:
Ban, S
Maruno, S
Citation: S. Ban et S. Maruno, pH distribution around the electrode during electrochemical deposition process for producing bioactive apatite, JPN J A P 2, 38(5A), 1999, pp. L537-L539
Authors:
Yamakawa, S
Sugihara, K
Furukawa, T
Nishioka, Y
Nakahata, T
Abe, Y
Maruno, S
Tokuda, Y
Citation: S. Yamakawa et al., Drivability improvement on deep-submicron MOSFET's by elevation of source drain regions, IEEE ELEC D, 20(7), 1999, pp. 366-368
Authors:
Ando, Y
Sakamoto, I
Suzuki, I
Maruno, S
Citation: Y. Ando et al., Resistivity and structural defects of reactively sputtered TiN and HfN films, THIN SOL FI, 344, 1999, pp. 246-249
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