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Results: 26-49/49
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Kaschner, A
Bechstedt, F
Amano, H
Akasaki, I
Citation: G. Steude et al., Strain modification of GaN in AlGaN/GaN epitaxial films, JPN J A P 2, 38(5A), 1999, pp. L498-L500
Authors:
Hofmann, DM
Meyer, BK
Leiter, F
von Forster, W
Alves, H
Romanov, N
Amano, H
Akasaki, I
Citation: Dm. Hofmann et al., Optical transitions of the Mg acceptor in GaN, JPN J A P 2, 38(12A), 1999, pp. L1422-L1424
Authors:
Bohm, M
Henecker, F
Hofstaetter, A
Luh, M
Meyer, BK
Scharmann, A
Kondratiev, OV
Korzhik, MV
Citation: M. Bohm et al., Electron traps in the scintillator material PbWO4 and their correlation tothermally stimulated luminescence, RADIAT EFF, 150(1-4), 1999, pp. 21-27
Authors:
Suski, T
Jun, J
Leszczynski, M
Teisseyre, H
Grzegory, I
Porowski, S
Dollinger, G
Saarinen, K
Laine, T
Nissila, J
Burkhard, W
Kriegseis, W
Meyer, BK
Citation: T. Suski et al., High pressure fabrication and processing of GaN : Mg, MAT SCI E B, 59(1-3), 1999, pp. 1-5
Authors:
Strittmatter, A
Krost, A
Turck, V
Strassburg, M
Bimberg, D
Blasing, J
Hempel, T
Christen, J
Neubauer, B
Gerthsen, D
Christmann, T
Meyer, BK
Citation: A. Strittmatter et al., LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs andZnO nucleation layers, MAT SCI E B, 59(1-3), 1999, pp. 29-32
Authors:
Topf, M
Cavas, F
Meyer, BK
Kempf, B
Betz, W
Veit, P
Citation: M. Topf et al., Ion beam sputter etching of galliumnitride grown by chloride transport LP-CVD, MAT SCI E B, 59(1-3), 1999, pp. 345-349
Authors:
Hofmann, DM
Burkhardt, W
Leiter, F
von Forster, W
Alves, H
Hofstaetter, A
Meyer, BK
Romanov, NG
Amano, H
Akasaki, I
Citation: Dm. Hofmann et al., Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration, PHYSICA B, 274, 1999, pp. 43-45
Authors:
Wetzel, C
Ager, JW
Topf, M
Meyer, BK
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Correlation of vibrational modes and DX-like centers in GaN : O, PHYSICA B, 274, 1999, pp. 109-112
Authors:
Borner, F
Gebauer, J
Eichler, S
Krause-Rehberg, R
Dirnstorfer, I
Meyer, BK
Karg, F
Citation: F. Borner et al., Defects in CuIn(Ga)Se-2 solar cell material characterized by positron annihilation: post-growth annealing effects, PHYSICA B, 274, 1999, pp. 930-933
Authors:
Hagele, D
Zimmermann, R
Oestreich, M
Hofmann, MR
Ruhle, WW
Meyer, BK
Amano, H
Akasaki, I
Citation: D. Hagele et al., Energy loss rate of excitons in GaN, PHYSICA B, 272(1-4), 1999, pp. 409-411
Authors:
Steude, G
Hofmann, DM
Meyer, BK
Hartdegen, H
Hollfelder, M
Citation: G. Steude et al., Transport investigations on high purity MOVPE grown GaAs, PHYS ST S-B, 216(2), 1999, pp. 1039-1047
Authors:
Gil, B
Meyer, BK
Monemar, B
Citation: B. Gil et al., Papers presented at the Third International Conference on Nitride Semiconductors (ICNS'99) Montpellier, France, July 5 to 9, 1999 - Chairmen's preface, PHYS ST S-B, 216(1), 1999, pp. 3-3
Authors:
Rodina, AV
Dietrich, M
Goldner, A
Eckey, L
Efros, AL
Rosen, M
Hoffmann, A
Meyer, BK
Citation: Av. Rodina et al., Exciton energy structure in wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 21-26
Authors:
Meyer, BK
Steude, G
Goldner, A
Hoffmann, A
Amano, H
Akasaki, I
Citation: Bk. Meyer et al., Photoluminescence investigations of AlGaN on GaN epitaxial films, PHYS ST S-B, 216(1), 1999, pp. 187-191
Authors:
Meister, D
Topf, M
Dirnstorfer, I
Meyer, BK
Schwarz, R
Heuken, M
Citation: D. Meister et al., Photoconductivity in AlxGa1-xN with different Al contents, PHYS ST S-B, 216(1), 1999, pp. 749-753
Authors:
Hagele, D
Zimmermann, R
Oestreich, M
Hofmann, MR
Ruhle, WW
Meyer, BK
Amano, H
Akasaki, I
Citation: D. Hagele et al., Cooling dynamics of excitons in GaN, PHYS REV B, 59(12), 1999, pp. R7797-R7800
Authors:
Meyer, BK
Citation: Bk. Meyer, Magnetic resonance investigations on group III-nitrides, SEM SEMIMET, 57, 1999, pp. 371-406
Authors:
Burkhardt, W
Christmann, T
Meyer, BK
Niessner, W
Schalch, D
Scharmann, A
Citation: W. Burkhardt et al., W- and F-doped VO2 films studied by photoelectron spectrometry, THIN SOL FI, 345(2), 1999, pp. 229-235
Authors:
Gil, B
Meyer, BK
Monemar, B
Citation: B. Gil et al., Papers presented at the Third International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France, July 5 to 9, 1999 - Growth and device applications to group-III nitrides - Chairmen's preface, PHYS ST S-A, 176(1), 1999, pp. 3-3
Authors:
Dirnstorfer, I
Hofmann, DM
Meister, D
Meyer, BK
Citation: I. Dirnstorfer et al., Postgrowth thermal treatment of CuIn(Ga)Se-2: Characterization of doping levels in In-rich thin films, J APPL PHYS, 85(3), 1999, pp. 1423-1428
Authors:
Meyer, BK
Perdew, GH
Citation: Bk. Meyer et Gh. Perdew, Characterization of the AhR-hsp90-XAP2 core complex and the role of the immunophilin-related protein XAP2 in AhR stabilization, BIOCHEM, 38(28), 1999, pp. 8907-8917
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Bertram, F
Christen, J
Amano, H
Akasaki, I
Citation: G. Steude et al., Optical investigations of AlGaN on GaN epitaxial films, APPL PHYS L, 74(17), 1999, pp. 2456-2458
Authors:
Witte, H
Krtschil, A
Lisker, M
Christen, J
Topf, M
Meister, D
Meyer, BK
Citation: H. Witte et al., Interface and bulk defects in SiC/GaN heterostructures characterized usingthermal admittance spectroscopy, APPL PHYS L, 74(10), 1999, pp. 1424-1426
Authors:
Fiederle, M
Eiche, C
Salk, M
Schwarz, R
Benz, KW
Stadler, W
Hofmann, DM
Meyer, BK
Citation: M. Fiederle et al., Modified compensation model of CdTe, J APPL PHYS, 84(12), 1998, pp. 6689-6692