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Results: 1-16 |
Results: 16
Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures
Authors: Stoyanov, ND Mikhailova, MP Andreichuk, OV Moiseev, KD Andreev, IA Afrailov, MA Yakovlev, YP
Citation: Nd. Stoyanov et al., Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures, SEMICONDUCT, 35(4), 2001, pp. 453-458
Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties
Authors: Voronina, TI Zhurtanov, BE Lagunova, TS Mikhailova, MP Moiseev, KD Rozov, AE Yakovlev, YP
Citation: Ti. Voronina et al., Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties, SEMICONDUCT, 35(3), 2001, pp. 331-337
Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface
Authors: Bazhenov, NL Zegrya, GG Mikhailova, MP Mynbaev, KD Smirnov, VA Yakovlev, YP
Citation: Nl. Bazhenov et al., Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface, SEMIC SCI T, 16(9), 2001, pp. 812-815
Quantum magnetotransport at a type II broken-gap single heterointerface
Authors: Moiseev, KD Berezovets, VA Mikhailova, MP Nizhankovskii, VI Parfeniev, RV Yakovlev, YP
Citation: Kd. Moiseev et al., Quantum magnetotransport at a type II broken-gap single heterointerface, SURF SCI, 482, 2001, pp. 1083-1089
Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
Authors: Moiseev, KD Mikhailova, MP Yakovlev, YP Simecek, T Hulicius, E Oswald, J
Citation: Kd. Moiseev et al., Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs, J APPL PHYS, 90(6), 2001, pp. 2813-2817
Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
Authors: Ivanov, SV Solov'ev, VA Moiseev, KD Sedova, IV Terent'ev, YV Toropov, AA Meltzer, BY Mikhailova, MP Yakovlev, YP Kop'ev, PS
Citation: Sv. Ivanov et al., Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy, APPL PHYS L, 78(12), 2001, pp. 1655-1657
Magnetotransport in a semimetal channel in p-Ga1-xInxAsySb1-y/p-InAs heterostructures with various compositions of the solid solution
Authors: Voronina, TI Lagunova, TS Mikhailova, MP Moiseev, KD Rozov, AE Yakovlev, YP
Citation: Ti. Voronina et al., Magnetotransport in a semimetal channel in p-Ga1-xInxAsySb1-y/p-InAs heterostructures with various compositions of the solid solution, SEMICONDUCT, 34(2), 2000, pp. 189-194
Photoluminescence of Ga1-xInxAsySb1-y solid solutions lattice-matched to InAs
Authors: Moiseev, KD Toropov, AA Terent'ev, YV Mikhailova, MP Yakovlev, YP
Citation: Kd. Moiseev et al., Photoluminescence of Ga1-xInxAsySb1-y solid solutions lattice-matched to InAs, SEMICONDUCT, 34(12), 2000, pp. 1376-1380
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
Authors: Zegrya, GG Mikhailova, MP Danilova, TN Imenkov, AN Moiseev, KD Sherstnev, VV Yakovlev, YP
Citation: Gg. Zegrya et al., Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions, SEMICONDUCT, 33(3), 1999, pp. 350-354
Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
Authors: Zhurtanov, BE Moiseev, KD Mikhailova, MP Voronina, TI Stoyanov, ND Yakovlev, YP
Citation: Be. Zhurtanov et al., Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure, SEMICONDUCT, 33(3), 1999, pp. 355-358
Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary
Authors: Andreev, IA Kunitsyna, EV Mikhailova, MP Yakovlev, YP
Citation: Ia. Andreev et al., Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary, SEMICONDUCT, 33(2), 1999, pp. 216-220
Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3-5 mu m
Authors: Moiseev, KD Mikhailova, MP Zhurtanov, BI Voronina, TI Andreychuk, OV Stoyanov, ND Yakovlev, YP
Citation: Kd. Moiseev et al., Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3-5 mu m, APPL SURF S, 142(1-4), 1999, pp. 257-261
Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
Authors: Moiseev, KD Mikhailova, MP Stoyanov, ND Yakovlev, YP Hulicius, E Simecek, T Oswald, J Pangrac, J
Citation: Kd. Moiseev et al., Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures, J APPL PHYS, 86(11), 1999, pp. 6264-6268
Interface-induced phenomena in type II antimonide-arsenide heterostructures
Authors: Mikhailova, MP Moiseev, KD Berezovets, YA Parfeniev, RV Bazhenov, NL Smirnov, VA Yakovlev, YP
Citation: Mp. Mikhailova et al., Interface-induced phenomena in type II antimonide-arsenide heterostructures, IEE P-OPTO, 145(5), 1998, pp. 268-274
Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates
Authors: L'vova, TV Andreev, IA Kunitsyna, EV Mikhailova, MP Ulin, VP Yakovlev, YP
Citation: Tv. L'Vova et al., Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates, IEE P-OPTO, 145(5), 1998, pp. 303-306
Scanning electron microscopy of long-wavelength laser structures
Authors: Solov'ev, VA Mikhailova, MP Moiseev, KD Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Va. Solov'Ev et al., Scanning electron microscopy of long-wavelength laser structures, SEMICONDUCT, 32(11), 1998, pp. 1157-1161
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