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Results: 1-25 | 26-35
Results: 1-25/35
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
Authors: Visconti, P Reshchikov, MA Jones, KM Wang, DF Cingolani, R Morkoc, H Molnar, RJ Smith, DJ
Citation: P. Visconti et al., Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication, J VAC SCI B, 19(4), 2001, pp. 1328-1333
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
Authors: Hsu, JWP Manfra, MJ Lang, DV Baldwin, KW Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures, J ELEC MAT, 30(3), 2001, pp. 110-114
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Look, DC Molnar, RJ
Citation: Jwp. Hsu et al., Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy, J ELEC MAT, 30(3), 2001, pp. 115-122
Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n(+) diodes
Authors: Aggarwal, RL Melngailis, I Verghese, S Molnar, RJ Geis, MW Mahoney, LJ
Citation: Rl. Aggarwal et al., Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n(+) diodes, SOL ST COMM, 117(9), 2001, pp. 549-553
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
Authors: Look, DC Stutz, CE Molnar, RJ Saarinen, K Liliental-Weber, Z
Citation: Dc. Look et al., Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN, SOL ST COMM, 117(10), 2001, pp. 571-575
Evidence for shallow acceptors in GaN
Authors: Reynolds, DC Look, DC Jogai, B Molnar, RJ
Citation: Dc. Reynolds et al., Evidence for shallow acceptors in GaN, J APPL PHYS, 89(11), 2001, pp. 6272-6274
GaN avalanche photodiodes operating in linear-gain mode and Geiger mode
Authors: Verghese, S McIntosh, KA Molnar, RJ Mahoney, LJ Aggarwal, RL Geis, MW Molvar, KM Duerr, EK Melngailis, I
Citation: S. Verghese et al., GaN avalanche photodiodes operating in linear-gain mode and Geiger mode, IEEE DEVICE, 48(3), 2001, pp. 502-511
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
Authors: Moore, WJ Freitas, JA Braga, GCB Molnar, RJ Lee, SK Lee, KY Song, IJ
Citation: Wj. Moore et al., Identification of Si and O donors in hydride-vapor-phase epitaxial GaN, APPL PHYS L, 79(16), 2001, pp. 2570-2572
Spatial variation of luminescence in thick GaN films
Authors: Bertram, F Srinivasan, S Ponce, FA Riemann, T Christen, J Molnar, RJ
Citation: F. Bertram et al., Spatial variation of luminescence in thick GaN films, APPL PHYS L, 78(9), 2001, pp. 1222-1224
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
Authors: Fang, ZQ Look, DC Jasinski, J Benamara, M Liliental-Weber, Z Molnar, RJ
Citation: Zq. Fang et al., Evolution of deep centers in GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 78(3), 2001, pp. 332-334
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
Authors: Hsu, JWP Manfra, MJ Chu, SNG Chen, CH Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy, APPL PHYS L, 78(25), 2001, pp. 3980-3982
Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
Authors: Goss, SH Sun, XL Young, AP Brillson, LJ Look, DC Molnar, RJ
Citation: Sh. Goss et al., Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces, APPL PHYS L, 78(23), 2001, pp. 3630-3632
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes
Authors: Hsu, JWP Manfra, MJ Lang, DV Richter, S Chu, SNG Sergent, AM Kleiman, RN Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes, APPL PHYS L, 78(12), 2001, pp. 1685-1687
Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope
Authors: Florescu, DI Asnin, VA Mourokh, LG Pollak, FH Molnar, RJ
Citation: Di. Florescu et al., Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope, MRS I J N S, 5, 2000, pp. NIL_288-NIL_293
Sites and motion of Mu(-) defect centers in n-type gallium nitride
Authors: Lichti, RL Cox, SFJ Dawdy, MR Head, TL Hitti, B Molnar, RJ Schwab, C Vaudo, RP
Citation: Rl. Lichti et al., Sites and motion of Mu(-) defect centers in n-type gallium nitride, PHYSICA B, 289, 2000, pp. 542-545
Surface recombination and sulfide passivation of GaN
Authors: Martinez, GL Curiel, MR Skromme, BJ Molnar, RJ
Citation: Gl. Martinez et al., Surface recombination and sulfide passivation of GaN, J ELEC MAT, 29(3), 2000, pp. 325-331
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
Authors: Florescu, DI Asnin, VM Pollak, FH Molnar, RJ Wood, CEC
Citation: Di. Florescu et al., High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence, J APPL PHYS, 88(6), 2000, pp. 3295-3300
Strain variation with sample thickness in GaN grown by hydride vapor phaseepitaxy
Authors: Reynolds, DC Look, DC Jogai, B Hoelscher, JE Sherriff, RE Molnar, RJ
Citation: Dc. Reynolds et al., Strain variation with sample thickness in GaN grown by hydride vapor phaseepitaxy, J APPL PHYS, 88(3), 2000, pp. 1460-1463
Spectroscopy of competing mechanisms generating stimulated emission in gallium nitride
Authors: Herzog, WD Bunea, GE Unlu, MS Goldberg, BB Molnar, RJ
Citation: Wd. Herzog et al., Spectroscopy of competing mechanisms generating stimulated emission in gallium nitride, APPL PHYS L, 77(25), 2000, pp. 4145-4147
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
Authors: Visconti, P Jones, KM Reshchikov, MA Cingolani, R Morkoc, H Molnar, RJ
Citation: P. Visconti et al., Dislocation density in GaN determined by photoelectrochemical and hot-wet etching, APPL PHYS L, 77(22), 2000, pp. 3532-3534
Nature of the highly conducting interfacial layer in GaN films
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Molnar, RJ
Citation: Jwp. Hsu et al., Nature of the highly conducting interfacial layer in GaN films, APPL PHYS L, 77(18), 2000, pp. 2873-2875
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
Authors: Manfra, MJ Pfeiffer, LN West, KW Stormer, HL Baldwin, KW Hsu, JWP Lang, DV Molnar, RJ
Citation: Mj. Manfra et al., High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy, APPL PHYS L, 77(18), 2000, pp. 2888-2890
Electron beam and optical depth profiling of quasibulk GaN
Authors: Chernyak, L Osinsky, A Nootz, G Schulte, A Jasinski, J Benamara, M Liliental-Weber, Z Look, DC Molnar, RJ
Citation: L. Chernyak et al., Electron beam and optical depth profiling of quasibulk GaN, APPL PHYS L, 77(17), 2000, pp. 2695-2697
Ultraviolet photon counting with GaN avalanche photodiodes
Authors: McIntosh, KA Molnar, RJ Mahoney, LJ Molvar, KM Efremow, N Verghese, S
Citation: Ka. Mcintosh et al., Ultraviolet photon counting with GaN avalanche photodiodes, APPL PHYS L, 76(26), 2000, pp. 3938-3940
Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Authors: Birkhahn, R Hudgins, R Lee, D Steckl, AJ Molnar, RJ Saleh, A Zavada, JM
Citation: R. Birkhahn et al., Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates, J VAC SCI B, 17(3), 1999, pp. 1195-1199
Risultati: 1-25 | 26-35