AAAAAA
Results:
1-15
|
Results: 15
Authors:
Munetoh, S
Moriguchi, K
Shintani, A
Nishihara, K
Motooka, T
Citation: S. Munetoh et al., Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes - art. no. 193314, PHYS REV B, 6419(19), 2001, pp. 3314
Authors:
Moriguchi, K
Munetoh, S
Shintani, A
Motooka, T
Citation: K. Moriguchi et al., Empirical potential description of energetics and thermodynamic propertiesin expanded-volume silicon clathrates - art. no. 195409, PHYS REV B, 6419(19), 2001, pp. 5409
Authors:
Motooka, T
Nishihara, K
Munetoh, S
Moriguchi, K
Shintani, A
Citation: T. Motooka et al., Reply to "Comment on 'Molecular dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'" - art. no. 237402, PHYS REV B, 6323(23), 2001, pp. 7402-NIL_541
Authors:
Munetoh, S
Moriguchi, K
Kamei, K
Shintani, A
Motooka, T
Citation: S. Munetoh et al., Epitaxial growth of a low-density framework form of crystalline silicon: Amolecular-dynamics study, PHYS REV L, 86(21), 2001, pp. 4879-4882
Authors:
Watanabe, F
Ohmura, K
Kawai, S
Motooka, T
Citation: F. Watanabe et al., CVD grown silicon thin films with high carbon concentration: morphology and self-assembly controlled by surface segregation, J CRYST GR, 222(1-2), 2001, pp. 1-8
Authors:
Motooka, T
Nisihira, K
Munetoh, S
Moriguchi, K
Shintani, A
Citation: T. Motooka et al., Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms, PHYS REV B, 61(12), 2000, pp. 8537-8540
Authors:
Sato, M
Yamatani, T
Sowa, H
Mizue, H
Tajiri, E
Furuta, Y
Motooka, T
Shirataki, K
Citation: M. Sato et al., A unique case of central diabetes insipidus (DI) associated with transientpituitary stalk enlargement: Close observation over several years using magnetic resonance imaging (MRI) and hypophysial endocrine tests, ENDOCR J, 47(6), 2000, pp. 689-695
Authors:
Motooka, T
Kusano, Y
Nisihira, K
Kato, N
Citation: T. Motooka et al., Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers, APPL SURF S, 159, 2000, pp. 111-115
Authors:
Nishihira, K
Munetoh, S
Motooka, T
Citation: K. Nishihira et al., Uniaxial strain observed in solid/liquid interface during crystal growth from melted Si: a molecular dynamics study, J CRYST GR, 210(1-3), 2000, pp. 60-64
Authors:
Harada, S
Motooka, T
Citation: S. Harada et T. Motooka, Recrystallization and electrical properties of MeV P implanted 6H-SiC, J APPL PHYS, 87(5), 2000, pp. 2655-2657
Authors:
Bezerra, EF
Freire, VN
Souza, AG
Mendes, J
Lemos, V
Ikoma, Y
Watanabe, F
Motooka, T
Citation: Ef. Bezerra et al., Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices, APPL PHYS L, 77(26), 2000, pp. 4316-4318
Authors:
Ikoma, Y
Endo, T
Watanabe, F
Motooka, T
Citation: Y. Ikoma et al., Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonicfree jets of CH3SiH3, JPN J A P 2, 38(3B), 1999, pp. L301-L303
Authors:
Ishimaru, M
Tsunemori, T
Harada, S
Arita, M
Motooka, T
Citation: M. Ishimaru et al., Microstructural evolution of oxygen implanted silicon during annealing processes, NUCL INST B, 148(1-4), 1999, pp. 311-316
Authors:
Ikoma, Y
Endo, T
Watanabe, F
Motooka, T
Citation: Y. Ikoma et al., Growth of Si/3C-SiC/Si(100) heterostructures by pulsed supersonic free jets, APPL PHYS L, 75(25), 1999, pp. 3977-3979
Authors:
Ishimaru, M
Munetoh, S
Motooka, T
Moriguchi, K
Shintani, A
Citation: M. Ishimaru et al., Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt, PHYS REV B, 58(19), 1998, pp. 12583-12586
Risultati:
1-15
|