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Results: 1-10 |
Results: 10
Investigations of chemical vapor deposition of GaN using synchrotron radiation
Authors: Thompson, C Stephenson, GB Eastman, JA Munkholm, A Auciello, O Murty, MVR Fini, P DenBaars, SP Speck, JS
Citation: C. Thompson et al., Investigations of chemical vapor deposition of GaN using synchrotron radiation, J ELCHEM SO, 148(5), 2001, pp. C390-C394
Morphological stability of nanostructures
Authors: Murty, MVR
Citation: Mvr. Murty, Morphological stability of nanostructures, PHYS REV B, 62(24), 2000, pp. 17004-17011
Step bunching on the vicinal GaN(0001) surface
Authors: Murty, MVR Fini, P Stephenson, GB Thompson, C Eastman, JA Munkholm, A Auciello, O Jothilingam, R DenBaars, SP Speck, JS
Citation: Mvr. Murty et al., Step bunching on the vicinal GaN(0001) surface, PHYS REV B, 62(16), 2000, pp. R10661-R10664
Characteristics of root growth and water uptake from soil in upland rice and maize under water stress
Authors: Kondo, M Murty, MVR Aragones, DV
Citation: M. Kondo et al., Characteristics of root growth and water uptake from soil in upland rice and maize under water stress, SOIL SCI PL, 46(3), 2000, pp. 721-732
In situ studies of the effect of silicon on GaN growth modes
Authors: Munkholm, A Stephenson, GB Eastman, JA Auciello, O Murty, MVR Thompson, C Fini, P Speck, JS DenBaars, SP
Citation: A. Munkholm et al., In situ studies of the effect of silicon on GaN growth modes, J CRYST GR, 221, 2000, pp. 98-105
Persistent layer-by-layer sputtering of Au(111)
Authors: Murty, MVR Couture, AJ Cooper, BH Woll, AR Brock, JD Headrick, RL
Citation: Mvr. Murty et al., Persistent layer-by-layer sputtering of Au(111), J APPL PHYS, 88(1), 2000, pp. 597-599
Layer-by-layer growth of GaN induced by silicon
Authors: Munkholm, A Thompson, C Murty, MVR Eastman, JA Auciello, O Stephenson, GB Fini, P DenBaars, SP Speck, JS
Citation: A. Munkholm et al., Layer-by-layer growth of GaN induced by silicon, APPL PHYS L, 77(11), 2000, pp. 1626-1628
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
Authors: Fini, P Munkholm, A Thompson, C Stephenson, GB Eastman, JA Murty, MVR Auciello, O Zhao, L DenBaars, SP Speck, JS
Citation: P. Fini et al., In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN, APPL PHYS L, 76(26), 2000, pp. 3893-3895
Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111)
Authors: Murty, MVR Curcic, T Judy, A Cooper, BH Woll, AR Brock, JD Kycia, S Headrick, RL
Citation: Mvr. Murty et al., Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111), PHYS REV B, 60(24), 1999, pp. 16956-16964
Instability in molecular beam epitaxy due to fast edge diffusion and corner diffusion barriers
Authors: Murty, MVR Cooper, BH
Citation: Mvr. Murty et Bh. Cooper, Instability in molecular beam epitaxy due to fast edge diffusion and corner diffusion barriers, PHYS REV L, 83(2), 1999, pp. 352-355
Risultati: 1-10 |