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Results: 1-22 |
Results: 22
PHOTOCONDUCTIVITY OF UNDOPED, NITROGEN-DOPED AND BORON-DOPED CVD-DIAMOND AND SYNTHETIC DIAMOND
Authors: ROHRER E NEBEL CE STUTZMANN M FLOTER A ZACHAI R JIANG X KLAGES CP
Citation: E. Rohrer et al., PHOTOCONDUCTIVITY OF UNDOPED, NITROGEN-DOPED AND BORON-DOPED CVD-DIAMOND AND SYNTHETIC DIAMOND, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 879-883
ELECTRICAL AND STRUCTURAL-PROPERTIES OF ALGAN - A COMPARISON WITH CVDDIAMOND
Authors: STUTZMANN M AMBACHER O ANGERER H NEBEL CE ROHRER E
Citation: M. Stutzmann et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF ALGAN - A COMPARISON WITH CVDDIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 123-128
CARRIER TRAPPING AND RELEASE IN CVD-DIAMOND RIMS
Authors: NEBEL CE STUTZMANN M LACHER F KOIDL P ZACHAI R
Citation: Ce. Nebel et al., CARRIER TRAPPING AND RELEASE IN CVD-DIAMOND RIMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 556-559
HIGH-RESOLUTION THERMAL-PROCESSING OF SEMICONDUCTORS USING PULSED-LASER INTERFERENCE PATTERNING
Authors: KELLY MK ROGG J NEBEL CE STUTZMANN M KATAI S
Citation: Mk. Kelly et al., HIGH-RESOLUTION THERMAL-PROCESSING OF SEMICONDUCTORS USING PULSED-LASER INTERFERENCE PATTERNING, Physica status solidi. a, Applied research, 166(2), 1998, pp. 651-657
LASER-INTERFERENCE CRYSTALLIZATION OF AMORPHOUS-SILICON - APPLICATIONS AND PROPERTIES
Authors: NEBEL CE CHRISTIANSEN S STRUNK HP DAHLHEIMER B KARRER U STUTZMANN M
Citation: Ce. Nebel et al., LASER-INTERFERENCE CRYSTALLIZATION OF AMORPHOUS-SILICON - APPLICATIONS AND PROPERTIES, Physica status solidi. a, Applied research, 166(2), 1998, pp. 667-674
CONDUCTIVE MICROCRYSTALLINE-SI FILMS PRODUCED BY LASER PROCESSING
Authors: DAHLHEIMER B KARRER U NEBEL CE STUTZMANN M
Citation: B. Dahlheimer et al., CONDUCTIVE MICROCRYSTALLINE-SI FILMS PRODUCED BY LASER PROCESSING, Journal of non-crystalline solids, 230, 1998, pp. 916-920
DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SYNTHETIC TYPE IIB DIAMOND
Authors: ZEISEL R NEBEL CE STUTZMANN M
Citation: R. Zeisel et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SYNTHETIC TYPE IIB DIAMOND, Journal of applied physics, 84(11), 1998, pp. 6105-6108
SUB-BANDGAP SPECTROSCOPY OF CHEMICAL-VAPOR-DEPOSITION DIAMOND
Authors: ROHRER E GRAEFF CFO NEBEL CE STUTZMANN M GUTTLER H ZACHAI R
Citation: E. Rohrer et al., SUB-BANDGAP SPECTROSCOPY OF CHEMICAL-VAPOR-DEPOSITION DIAMOND, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 115-118
ELECTRONIC-PROPERTIES OF CVD AND SYNTHETIC DIAMOND
Authors: NEBEL CE MUNZ J STUTZMANN M ZACHAI R GUTTLER H
Citation: Ce. Nebel et al., ELECTRONIC-PROPERTIES OF CVD AND SYNTHETIC DIAMOND, Physical review. B, Condensed matter, 55(15), 1997, pp. 9786-9791
REALIZATION OF ALGAAS ANTIDOT ARRAYS BY PULSED-LASER INTERFERENCE GRATINGS
Authors: NEBEL CE ROGG J KELLY MK DAHLHEIMER B ROTHER M BICHLER M WEGSCHEIDER W STUTZMANN M
Citation: Ce. Nebel et al., REALIZATION OF ALGAAS ANTIDOT ARRAYS BY PULSED-LASER INTERFERENCE GRATINGS, Journal of applied physics, 82(3), 1997, pp. 1497-1499
CHARACTERIZATION OF TEXTURED POLYCRYSTALLINE DIAMOND BY ELECTRON-SPIN-RESONANCE SPECTROSCOPY
Authors: GRAEFF CFO NEBEL CE STUTZMANN M FLOTER A ZACHAI R
Citation: Cfo. Graeff et al., CHARACTERIZATION OF TEXTURED POLYCRYSTALLINE DIAMOND BY ELECTRON-SPIN-RESONANCE SPECTROSCOPY, Journal of applied physics, 81(1), 1997, pp. 234-237
THE SIGN OF THE HALL-EFFECT IN HYDROGENATED AMORPHOUS AND DISORDERED CRYSTALLINE SILICON
Authors: NEBEL CE ROTHER M STUTZMANN M SUMMONTE C HEINTZE M
Citation: Ce. Nebel et al., THE SIGN OF THE HALL-EFFECT IN HYDROGENATED AMORPHOUS AND DISORDERED CRYSTALLINE SILICON, Philosophical magazine letters, 74(6), 1996, pp. 455-463
SUBMICRON SILICON STRUCTURES FOR THIN-FILM SOLAR-CELLS
Authors: NEBEL CE DAHLHEIMER B SCHONIGER S STUTZMANN M
Citation: Ce. Nebel et al., SUBMICRON SILICON STRUCTURES FOR THIN-FILM SOLAR-CELLS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 55-67
NITROGEN-RELATED DOPANT AND DEFECT STATES IN CVD DIAMOND
Authors: ROHRER E GRAEFF CFO JANSSEN R NEBEL CE STUTZMANN M GUTTLER H ZACHAI R
Citation: E. Rohrer et al., NITROGEN-RELATED DOPANT AND DEFECT STATES IN CVD DIAMOND, Physical review. B, Condensed matter, 54(11), 1996, pp. 7874-7880
OPTICAL-EXCITATION OF PARAMAGNETIC NITROGEN IN CHEMICAL-VAPOR-DEPOSITED DIAMOND
Authors: GRAEFF CFO ROHRER E NEBEL CE STUTZMANN M GUTTLER H ZACHAI R
Citation: Cfo. Graeff et al., OPTICAL-EXCITATION OF PARAMAGNETIC NITROGEN IN CHEMICAL-VAPOR-DEPOSITED DIAMOND, Applied physics letters, 69(21), 1996, pp. 3215-3217
LATERAL STRUCTURING OF III-V QUANTUM-WELL SYSTEMS WITH PULSED-LASER-INDUCED TRANSIENT THERMAL GRATINGS
Authors: KELLY MK NEBEL CE STUTZMANN M BOHM G
Citation: Mk. Kelly et al., LATERAL STRUCTURING OF III-V QUANTUM-WELL SYSTEMS WITH PULSED-LASER-INDUCED TRANSIENT THERMAL GRATINGS, Applied physics letters, 68(14), 1996, pp. 1984-1986
KINETICS OF METASTABILITY IN DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: NEBEL CE STREET RA JACKSON WB JOHNSON NM
Citation: Ce. Nebel et al., KINETICS OF METASTABILITY IN DOPED HYDROGENATED AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 291-306
LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION
Authors: HEINTZE M SANTOS PV NEBEL CE STUTZMANN M
Citation: M. Heintze et al., LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION, Applied physics letters, 64(23), 1994, pp. 3148-3150
SPACE-CHARGE-LIMITED CURRENTS AT LOW-TEMPERATURES IN HYDROGENATED AMORPHOUS-SILICON
Authors: NEBEL CE STREET RA
Citation: Ce. Nebel et Ra. Street, SPACE-CHARGE-LIMITED CURRENTS AT LOW-TEMPERATURES IN HYDROGENATED AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 67(5), 1993, pp. 721-731
THERMODYNAMIC-EQUILIBRIUM KINETICS OF PHOSPHORUS AND BORON-DOPED A-SI-H
Authors: NEBEL CE STREET RA JACKSON WB JOHNSON NM
Citation: Ce. Nebel et al., THERMODYNAMIC-EQUILIBRIUM KINETICS OF PHOSPHORUS AND BORON-DOPED A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 203-206
HALL EXPERIMENTS AND INTERPRETATION IN A-SI-H AND A-SIC-H
Authors: NEBEL CE STREET RA
Citation: Ce. Nebel et Ra. Street, HALL EXPERIMENTS AND INTERPRETATION IN A-SI-H AND A-SIC-H, Journal of non-crystalline solids, 166, 1993, pp. 449-452
A-SIH ELECTRON-DRIFT MOBILITY MEASURED UNDER EXTREMELY HIGH ELECTRIC-FIELD
Authors: KOCKA J KLIMA O SIPEK E NEBEL CE BAUER GH JUSKA G HOHEISEL M
Citation: J. Kocka et al., A-SIH ELECTRON-DRIFT MOBILITY MEASURED UNDER EXTREMELY HIGH ELECTRIC-FIELD, Physical review. B, Condensed matter, 45(12), 1992, pp. 6593-6600
Risultati: 1-22 |