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Results: 1-12 |
Results: 12
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES
Authors: NIKISHIN SA TEMKIN H ANTIPOV VG GURIEV AI ZUBRILOV AS ELYUKHIN VA FALEEV NN KYUTT RN CHIN AK
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES, Applied physics letters, 72(19), 1998, pp. 2361-2363
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation: Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
METALORGANIC MOLECULAR-BEAM EPITAXY OF GAASN WITH DIMETHYLHYDRAZINE
Authors: QIU Y JIN C FRANCOEUR S NIKISHIN SA TEMKIN H
Citation: Y. Qiu et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF GAASN WITH DIMETHYLHYDRAZINE, Applied physics letters, 72(16), 1998, pp. 1999-2001
ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX
Authors: MINTAIROV AM BLAGNOV PA MELEHIN VG FALEEV NN MERZ JL QIU Y NIKISHIN SA TEMKIN H
Citation: Am. Mintairov et al., ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX, Physical review. B, Condensed matter, 56(24), 1997, pp. 15836-15841
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF CUBIC GAN GAAS(001) USING HYDRAZINE/
Authors: NIKISHIN SA SERYOGIN GA TEMKIN H ANTIPOV VG RUVIMOV SS MERKULOV AV
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF CUBIC GAN GAAS(001) USING HYDRAZINE/, Journal of crystal growth, 175, 1997, pp. 139-144
GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
Authors: QIU Y NIKISHIN SA TEMKIN H FALEEV NN KUDRIAVTSEV YA
Citation: Y. Qiu et al., GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(24), 1997, pp. 3242-3244
THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS
Authors: QIU Y NIKISHIN SA TEMKIN H ELYUKHIN VA KUDRIAVTSEV YA
Citation: Y. Qiu et al., THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS, Applied physics letters, 70(21), 1997, pp. 2831-2833
HIGH-QUALITY GAN-INGAN HETEROSTRUCTURES GROWN ON (111)SILICON SUBSTRATES
Authors: YANG JW SUN CJ CHEN Q ANWAR MZ KHAN MA NIKISHIN SA SERYOGIN GA OSINSKY AV CHERNYAK L TEMKIN H HU CM MAHAJAN S
Citation: Jw. Yang et al., HIGH-QUALITY GAN-INGAN HETEROSTRUCTURES GROWN ON (111)SILICON SUBSTRATES, Applied physics letters, 69(23), 1996, pp. 3566-3568
NUCLEATION OF CUBIC GAN GAAS(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG RUVIMOV SS SERYOGIN GA TEMKIN H
Citation: Sa. Nikishin et al., NUCLEATION OF CUBIC GAN GAAS(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Applied physics letters, 69(21), 1996, pp. 3227-3229
MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE
Authors: ANTIPOV VG ZUBRILOV AS MERKULOV AV NIKISHIN SA SITNIKOVA AA STEPANOV MV TROSHKOV SI ULIN VP FALEEV NN
Citation: Vg. Antipov et al., MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE, Semiconductors, 29(10), 1995, pp. 946-951
PHOTODETECTOR ALGAAS GAAS STRUCTURES FORMED ON SI SUBSTRATES BY COMBINING LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY METHODS/
Authors: ANDREEV AM ANTIPOV VG KALINOVSKII VS KALLION RV NIKISHIN SA RUVIMOV SS STEPANOV MV TANKLEVSKAYA EM KHVOSTIKOV VP
Citation: Am. Andreev et al., PHOTODETECTOR ALGAAS GAAS STRUCTURES FORMED ON SI SUBSTRATES BY COMBINING LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY METHODS/, Semiconductors, 27(1), 1993, pp. 74-76
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