Authors:
SAVELEV IG
KRESHCHUK AM
NOVIKOV SV
SHIK AY
REMENYI G
KOVACS G
PODOR B
GOMBOS G
Citation: Ig. Savelev et al., SPIN SPLITTING OF THE LANDAU-LEVELS AND EXCHANGE INTERACTION OF A NONIDEAL 2-DIMENSIONAL ELECTRON-GAS IN INXGA1-XAS INP HETEROSTRUCTURES/, Journal of physics. Condensed matter, 8(46), 1996, pp. 9025-9036
Authors:
CHENG TS
FOXON CT
JENKINS LC
HOOPER SE
LACKLISON DE
ORTON JW
BER BY
MERKULOV AV
NOVIKOV SV
Citation: Ts. Cheng et al., SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE), Semiconductor science and technology, 11(4), 1996, pp. 538-541
Authors:
IZUMI A
KAWABATA K
TSUTSUI K
SOKOLOV NS
NOVIKOV SV
KHILKO AY
Citation: A. Izumi et al., GROWTH OF CDF2 CAF2SI(111) HETEROSTRUCTURE WITH ABRUPT INTERFACES BY USING THIN CAF2 BUFFER LAYER/, Applied surface science, 104, 1996, pp. 417-421
Citation: Ts. Cheng et al., MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 158(4), 1996, pp. 399-402
Citation: Lc. Jenkins et al., AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1585-1590
Citation: Ae. Kunitsyn et al., ANALYSIS OF THE PHOTOLUMINESCENCE SPECTRA OF GAAS-LAYERS GROWN FROM GA-BI FLUX SOLUTIONS, Semiconductors, 29(11), 1995, pp. 1090-1091
Citation: Sv. Novikov et Av. Vannikov, CLUSTER STRUCTURE IN THE DISTRIBUTION OF THE ELECTROSTATIC POTENTIAL IN A LATTICE OF RANDOMLY ORIENTED DIPOLES, Journal of physical chemistry, 99(40), 1995, pp. 14573-14576
Authors:
KRESHCHUK AM
NOVIKOV SV
POLYANSKAYA TA
SAVELEV IG
SHIK AY
Citation: Am. Kreshchuk et al., QUANTUM TRANSPORT EFFECTS IN A 2-DIMENSIONAL ELECTRON-GAS AS A TOOL FOR THE INVESTIGATION OF HETEROINTERFACES, Journal of crystal growth, 146(1-4), 1995, pp. 153-158
Authors:
NOVIKOV SV
FOXON CT
CHENG TS
TANSLEY TL
ORTON JW
LACKLISON DE
JOHNSTON D
BABAALI N
HOOPER SE
JENKINS LC
EAVES L
Citation: Sv. Novikov et al., AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 340-343
Citation: Sv. Novikov et Av. Vannikov, DISTRIBUTION OF ELECTROSTATIC POTENTIAL I N A LATTICE RANDOMLY ORIENTED DIPOLES, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 106(3), 1994, pp. 877-885
Citation: Sd. Bystrov et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/, Semiconductors, 28(2), 1994, pp. 180-182
Authors:
DROZDOV SV
KIPSHIZDE GD
KRESHCHUK AM
KULAGINA MM
NOVIKOV SV
SAVELEV IG
Citation: Sv. Drozdov et al., QUANTUM WIRES WITH CONTROLLABLE CONDUCTING-CHANNEL WIDTH BASED ON IN0.53GA0.47AS INP HETEROSTRUCTURES/, Semiconductors, 28(2), 1994, pp. 183-187
Citation: Sv. Novikov et Av. Vannikov, EFFECT OF DIPOLE-MOMENT ON CHARGE-CARRIER TRANSPORT IN DISORDERED ORGANIC MATRICES - A COMPARISON WITH THE DIPOLE TRAP MODEL, Journal of imaging science and technology, 38(4), 1994, pp. 355-358
Citation: Sv. Novikov et Av. Vannikov, DIPOLE-TRAP MODEL AND NONDISPERSIVE CHARGE-CARRIER TRANSPORT IN POLYMERS OF VARIOUS STRUCTURES, Journal of physics. Condensed matter, 6(48), 1994, pp. 10519-10531
Authors:
KRESCHUK AM
KULAGINA MM
NOVIKOV SV
SAVELEV IG
SHIK A
KIPSHIDZE GD
Citation: Am. Kreschuk et al., QUANTUM WIRES WITH THE TUNABLE WIDTH OF CONDUCTING CHANNEL IN IN0.53GA0.47AS INP HETEROSTRUCTURES/, Superlattices and microstructures, 16(2), 1994, pp. 153-156
Citation: Sv. Novikov et Av. Vannikov, DIPOLE TRAP MODEL AND CONCENTRATION-DEPENDENCE OF CHARGE-CARRIER MOBILITY IN DISORDERED ORGANIC MATRICES, Chemical physics, 187(3), 1994, pp. 289-2985