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Results:
1-16
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Results: 16
Authors:
LYSENKO VS
TYAGULSKI IP
GOMENIUK YV
OSIYUK IN
PATEL CJ
NUR O
WILLANDER M
Citation: Vs. Lysenko et al., THE ELECTRICAL ASSESSMENT OF SI1-XGEX SI HETEROSTRUCTURES/, Journal de physique. IV, 8(P3), 1998, pp. 87-90
Authors:
CHRETIEN O
YOUSIF MYA
NUR O
PATEL CJ
WILLANDER M
Citation: O. Chretien et al., ANALYSIS OF SI SI1-XGEX RETROGRADED DOUBLE-QUANTUM-WELL P-TYPE MOSFET/, Semiconductor science and technology, 13(9), 1998, pp. 999-1005
Authors:
YOUSIF MYA
NUR O
CHRETIEN O
FU Y
WILLANDER M
Citation: Mya. Yousif et al., THRESHOLD VOLTAGE AND CHARGE CONTROL CONSIDERATIONS IN DOUBLE-QUANTUM-WELL SI SI1-XGEX P-TYPE MOSFETS/, Solid-state electronics, 42(6), 1998, pp. 951-956
Authors:
ZHAO QX
NUR O
SODERVALL U
PATEL CJ
WILLANDER M
HOLTZ PO
DEBOER WB
Citation: Qx. Zhao et al., OPTICAL STUDY OF APCVD-GROWN SI1-XGEX SI QUANTUM-WELL STRUCTURES UNDER DIFFERENT POSTGROWTH ANNEALING CONDITIONS/, Journal of crystal growth, 193(3), 1998, pp. 328-334
Authors:
PATEL CJ
ZHAO QX
NUR O
WILLANDER M
Citation: Cj. Patel et al., PHOTOLUMINESCENCE OF PSEUDOMORPHIC SIGE FORMED BY GE-74(-IMPLANTATIONIN THE OVERLAYER OF SILICON-ON-INSULATOR MATERIAL() ION), Applied physics letters, 72(23), 1998, pp. 3047-3049
Authors:
NUR O
WILLANDER M
TURAN R
SARDELA MR
RADAMSON HH
HANSSON GV
Citation: O. Nur et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF PTSI P-SI1-XGEX LOW SCHOTTKY-BARRIER JUNCTIONS PREPARED BY COSPUTTERING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 241-246
Authors:
NUR O
WILLANDER M
TURAN R
SARDELA MR
HANSSON GV
Citation: O. Nur et al., LOW SCHOTTKY-BARRIER JUNCTIONS ON STRAINED P-SI1-XGEX FOR INFRARED DETECTION, Physica scripta. T, T69, 1997, pp. 250-254
Authors:
WAHAB Q
KARLSTEEN M
NUR O
HULTMAN L
WILLANDER M
SUNDGREN JE
Citation: Q. Wahab et al., HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/, Journal of electronic materials, 25(9), 1996, pp. 1495-1500
Authors:
RADAMSON HH
NUR O
NI WX
JOELSSON KB
WILLANDER M
HULTMAN L
HANSSON GV
Citation: Hh. Radamson et al., ELECTRICAL CHARACTERIZATION AND THE STRAIN COMPENSATION EFFECT AND THERMAL-STABILITY OF B-DOPED SI1-XGEX SI HETEROSTRUCTURES/, Semiconductor science and technology, 11(10), 1996, pp. 1396-1401
Authors:
OUACHA H
NUR O
WILLANDER M
FU Y
OUACHA A
Citation: H. Ouacha et al., 1 F NOISE CHARACTERIZATION OF IR/P-SI AND IR/PSI(1-X)GE(X) LOW SCHOTTKY-BARRIER JUNCTIONS/, Applied physics letters, 69(16), 1996, pp. 2382-2384
Authors:
NUR O
WILLANDER M
TURAN R
SARDELA MR
HANSSON GV
Citation: O. Nur et al., METAL-SEMICONDUCTOR JUNCTIONS ON P-TYPE STRAINED SI1-XGEX LAYERS, Applied physics letters, 68(8), 1996, pp. 1084-1086
Authors:
NUR O
SARDELA MR
WILLANDER M
TURAN R
Citation: O. Nur et al., SCHOTTKY-BARRIER HEIGHTS OF IR P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS/, Semiconductor science and technology, 10(4), 1995, pp. 551-555
Authors:
NUR O
WILLANDER M
HULTMAN L
RADAMSON HH
HANSSON GV
SARDELA MR
GREENE JE
Citation: O. Nur et al., COSI2 SI1-XGEX/SI(001) HETEROSTRUCTURES FORMED THROUGH DIFFERENT REACTION ROUTES - SILICIDATION-INDUCED STRAIN RELAXATION, DEFECT FORMATION, AND INTERLAYER DIFFUSION/, Journal of applied physics, 78(12), 1995, pp. 7063-7069
Authors:
NUR O
SARDELA MR
RADAMSON HH
WILLANDER M
HANSSON GV
HATZIKONSTANTINIDOU S
Citation: O. Nur et al., STRAIN RELAXATION IN EPITAXIAL SI1-XGEX LAYERS DURING SOME SILICIDATION PROCESSES, Physica scripta. T, 54, 1994, pp. 294-296
Authors:
NUR O
WILLANDER M
RADAMSON HH
SARDELA MR
HANSSON GV
PETERSSON CS
MAEX K
Citation: O. Nur et al., STRAIN CHARACTERIZATION OF COSI2 N-SI0.9GE0.1/P-SI HETEROSTRUCTURES/, Applied physics letters, 64(4), 1994, pp. 440-442
Authors:
RADAMSON HH
SARDELA MR
NUR O
WILLANDER M
SERNELIUS BE
NI WX
HANSSON GV
Citation: Hh. Radamson et al., ELECTRON-MOBILITY ENHANCEMENT IN SI USING DOUBLY DELTA-DOPED LAYERS, Applied physics letters, 64(14), 1994, pp. 1842-1844
Risultati:
1-16
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