AAAAAA
Results:
1-16
|
Results: 16
Authors:
Rao, CNR
Narayanamurti, V
Citation: Cnr. Rao et V. Narayanamurti, Electronic materials, CURR OP SOL, 5(4), 2001, pp. 251-251
Authors:
Appelbaum, I
Wang, TR
Fan, SH
Joannopoulos, JD
Narayanamurti, V
Citation: I. Appelbaum et al., Can silicon dimers form logic gates?, NANOTECHNOL, 12(3), 2001, pp. 391-393
Authors:
Narayanamurti, V
Kozhevnikov, M
Citation: V. Narayanamurti et M. Kozhevnikov, Beem imaging and spectroscopy of buried structures in semiconductors, PHYS REPORT, 349(6), 2001, pp. 447-514
Authors:
Ryou, JH
Dupuis, RD
Reddy, CV
Narayanamurti, V
Mathes, DT
Hull, R
Mintairov, A
Merz, JL
Citation: Jh. Ryou et al., Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates, J ELEC MAT, 30(5), 2001, pp. 471-476
Authors:
Altfeder, IB
Golovchenko, JA
Narayanamurti, V
Citation: Ib. Altfeder et al., Confinement-enhanced electron transport across a metal-semiconductor interface - art. no. 056801, PHYS REV L, 8705(5), 2001, pp. 6801
Authors:
Reddy, CV
Narayanamurti, V
Citation: Cv. Reddy et V. Narayanamurti, Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy, J APPL PHYS, 89(10), 2001, pp. 5797-5799
Authors:
Ryou, JH
Dupuis, RD
Walter, G
Kellogg, DA
Holonyak, N
Mathes, DT
Hull, R
Reddy, CV
Narayanamurti, V
Citation: Jh. Ryou et al., Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(26), 2001, pp. 4091-4093
Authors:
Ryou, JH
Dupuis, RD
Mathes, DT
Hull, R
Reddy, CV
Narayanamurti, V
Citation: Jh. Ryou et al., High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grownby metalorganic chemical vapor deposition, APPL PHYS L, 78(22), 2001, pp. 3526-3528
Authors:
Kozhevnikov, M
Narayanamurti, V
Reddy, CV
Xin, HP
Tu, CW
Mascarenhas, A
Zhang, Y
Citation: M. Kozhevnikov et al., Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy, PHYS REV B, 61(12), 2000, pp. R7861-R7864
Authors:
Smith, DL
Kozhevnikov, M
Lee, EY
Narayanamurti, V
Citation: Dl. Smith et al., Scattering theory of ballistic-electron-emission microscopy at nonepitaxial interfaces, PHYS REV B, 61(20), 2000, pp. 13914-13922
Authors:
Reddy, CV
Narayanamurti, V
Ryou, JH
Chowdhury, U
Dupuis, RD
Citation: Cv. Reddy et al., Observation of resonant tunneling through a quantized state in InP quantumdots in a double-barrier heterostructure, APPL PHYS L, 77(8), 2000, pp. 1167-1169
Authors:
Reddy, CV
Narayanamurti, V
Ryou, JH
Chowdhury, U
Dupuis, RD
Citation: Cv. Reddy et al., Imaging and local current transport measurements of AlInP quantum dots grown on GaP, APPL PHYS L, 76(11), 2000, pp. 1437-1439
Authors:
Kozhevnikov, M
Narayanamurti, V
Zheng, C
Chiu, YJ
Smith, DL
Citation: M. Kozhevnikov et al., Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures, PHYS REV L, 82(18), 1999, pp. 3677-3680
Authors:
Kozhevnikov, M
Narayanamurti, V
Mascarenhas, A
Zhang, Y
Olson, JM
Smith, DL
Citation: M. Kozhevnikov et al., Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy, APPL PHYS L, 75(8), 1999, pp. 1128-1130
Authors:
Bhargava, S
Blank, HR
Hall, E
Chin, MA
Kroemer, H
Narayanamurti, V
Citation: S. Bhargava et al., Staggered to straddling band lineups in InAs/Al(As,Sb), APPL PHYS L, 74(8), 1999, pp. 1135-1137
Authors:
Brazel, EG
Chin, MA
Narayanamurti, V
Citation: Eg. Brazel et al., Direct observation of localized high current densities in GaN films, APPL PHYS L, 74(16), 1999, pp. 2367-2369
Risultati:
1-16
|