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Results: 1-25/53
Authors:
Dutta, M
Alexson, D
Bergman, L
Nemanich, RJ
Dupuis, R
Kim, KW
Komirenko, S
Stroscio, M
Citation: M. Dutta et al., Phonons in III-V nitrides: Confined phonons and interface phonons, PHYSICA E, 11(2-3), 2001, pp. 277-280
Authors:
Kock, FAM
Garguilo, JM
Nemanich, RJ
Citation: Fam. Kock et al., Imaging electron emission from diamond film surfaces: N-doped diamond vs. nanostructured diamond, DIAM RELAT, 10(9-10), 2001, pp. 1714-1718
Authors:
Nemanich, RJ
Citation: Rj. Nemanich, Thank you Vicki Miller, DIAM RELAT, 10(12), 2001, pp. V-V
Authors:
Nemanich, RJ
Citation: Rj. Nemanich, Advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials, DIAM RELAT, 10(1), 2001, pp. VII-VII
Authors:
Platow, W
Wood, DE
Burnette, JE
Nemanich, RJ
Sayers, DE
Citation: W. Platow et al., XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001), J SYNCHROTR, 8, 2001, pp. 475-477
Authors:
Platow, W
Wood, DK
Tracy, KM
Burnette, JE
Nemanich, RJ
Sayers, DE
Citation: W. Platow et al., Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312, PHYS REV B, 6311(11), 2001, pp. 5312
Authors:
Gracin, D
Bogdanovic, I
Borjanovic, V
Jaksic, M
Pastuovic, Z
Dutta, JM
Vlahovic, B
Nemanich, RJ
Citation: D. Gracin et al., Quantitative analysis of a-Si1-xCx : H thin films by vibrational spectroscopy and nuclear methods, VACUUM, 61(2-4), 2001, pp. 303-308
Authors:
Platow, W
Nemanich, RJ
Sayers, DE
Hartman, JD
Davis, RF
Citation: W. Platow et al., Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si), J APPL PHYS, 90(12), 2001, pp. 5924-5927
Authors:
Park, M
Teng, CW
Sakhrani, V
McLaurin, MB
Kolbas, RM
Sanwald, RC
Nemanich, RJ
Hren, JJ
Cuomo, JJ
Citation: M. Park et al., Optical characterization of wide band gap amorphous semiconductors (a-Si :C : H): Effect of hydrogen dilution, J APPL PHYS, 89(2), 2001, pp. 1130-1137
Authors:
Alexson, D
Bergman, L
Nemanich, RJ
Dutta, M
Stroscio, MA
Parker, CA
Bedair, SM
El-Masry, NA
Adar, F
Citation: D. Alexson et al., Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys, J APPL PHYS, 89(1), 2001, pp. 798-800
Authors:
Ballarotto, VW
Siegrist, K
Phaneuf, RJ
Williams, ED
Yang, WC
Nemanich, RJ
Citation: Vw. Ballarotto et al., Photon energy dependence of contrast in photoelectron emission microscopy of Si devices, APPL PHYS L, 78(22), 2001, pp. 3547-3549
Authors:
Ward, BL
Hartman, JD
Hurt, EH
Tracy, KM
Davis, RF
Nemanich, RJ
Citation: Bl. Ward et al., Schottky barrier height and electron affinity of titanium on AIN, J VAC SCI B, 18(4), 2000, pp. 2082-2087
Authors:
O'Brien, ML
Koitzsch, C
Nemanich, RJ
Citation: Ml. O'Brien et al., Photoemission of the SiO2-SiC heterointerface, J VAC SCI B, 18(3), 2000, pp. 1776-1784
Authors:
Sowers, AT
Ward, BL
English, SL
Nemanich, RJ
Citation: At. Sowers et al., Measurement of field emission from nitrogen-doped diamond films, DIAM RELAT, 9(9-10), 2000, pp. 1569-1573
Authors:
Nemanich, RJ
Citation: Rj. Nemanich, Advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials, DIAM RELAT, 9(1), 2000, pp. VII-VII
Authors:
Balkas, CM
Sitar, Z
Bergman, L
Shmagin, IK
Muth, JF
Kolbas, R
Nemanich, RJ
Davis, RF
Citation: Cm. Balkas et al., Growth and characterization of GaN single crystals, J CRYST GR, 208(1-4), 2000, pp. 100-106
Authors:
Jeon, H
Jung, B
Kim, YD
Yang, WC
Nemanich, RJ
Citation: H. Jeon et al., Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111), J APPL PHYS, 88(5), 2000, pp. 2467-2471
Authors:
Christman, JA
Kim, SH
Maiwa, H
Maria, JP
Rodriguez, BJ
Kingon, AI
Nemanich, RJ
Citation: Ja. Christman et al., Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy, J APPL PHYS, 87(11), 2000, pp. 8031-8034
Authors:
Carter, RJ
Hauser, JR
Nemanich, RJ
Citation: Rj. Carter et al., Surface residue island nucleation in anhydrous HF/alcohol vapor processingof Si surfaces, J ELCHEM SO, 147(9), 2000, pp. 3512-3518
Authors:
Bilbro, GL
Nemanich, RJ
Citation: Gl. Bilbro et Rj. Nemanich, Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures, APPL PHYS L, 76(7), 2000, pp. 891-893
Authors:
Bergman, L
Dutta, M
Stroscio, MA
Komirenko, SM
Nemanich, RJ
Eiting, CJ
Lambert, DJH
Kwon, HK
Dupuis, RD
Citation: L. Bergman et al., Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice, APPL PHYS L, 76(15), 2000, pp. 1969-1971
Authors:
Bergman, L
Dutta, M
Nemanich, RJ
Citation: L. Bergman et al., Raman scattering spectroscopy and analyses of III-V nitride-based materials, SPR S MAT S, 42, 2000, pp. 273-313
Authors:
Park, M
McGregor, DR
Bergman, L
Nemanich, RJ
Hren, JJ
Cuomo, JJ
Choi, WB
Zhirnov, VV
Citation: M. Park et al., Raman analysis and field emission study of ion beam etched diamond films, J VAC SCI B, 17(2), 1999, pp. 700-704
Authors:
Park, M
Sowers, AT
Rinne, CL
Schlesser, R
Bergman, L
Nemanich, RJ
Sitar, Z
Hren, JJ
Cuomo, JJ
Zhirnov, VV
Choi, WB
Citation: M. Park et al., Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond, J VAC SCI B, 17(2), 1999, pp. 734-739
Authors:
Alexson, D
Bergman, L
Dutta, M
Kim, KW
Komirenko, S
Nemanich, RJ
Lee, BC
Stroscio, MA
Yu, SG
Citation: D. Alexson et al., Confined phonon and phonon-mode properties of III-V nitrides with wurtzitecrystal structure, PHYSICA B, 263, 1999, pp. 510-513