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Results: 1-13 |
Results: 13
REDUCTION OF CURRENT LEAKAGE IN CHEMICAL-VAPOR-DEPOSITED TA2O5 THIN-FILMS BY OXYGEN-RADICAL ANNEALING
Authors: MATSUI Y TORII K HIRAYAMA M FUJISAKI Y IIJIMA S OHJI Y
Citation: Y. Matsui et al., REDUCTION OF CURRENT LEAKAGE IN CHEMICAL-VAPOR-DEPOSITED TA2O5 THIN-FILMS BY OXYGEN-RADICAL ANNEALING, IEEE electron device letters, 17(9), 1996, pp. 431-433
TIME-DEPENDENT CHARGING BY X-RAY-IRRADIAT ION OF ULTRATHIN SIO2-FILMSON SI
Authors: IWATA S OHJI Y ISHIZAKA A
Citation: S. Iwata et al., TIME-DEPENDENT CHARGING BY X-RAY-IRRADIAT ION OF ULTRATHIN SIO2-FILMSON SI, Nippon Kinzoku Gakkaishi, 60(12), 1996, pp. 1192-1199
SPATIALLY UNIFORM LEAD PEROVSKITE THIN-FILMS FORMED BY MOCVD
Authors: MIKI H MURAOKA K KANETOMO M OHJI Y
Citation: H. Miki et al., SPATIALLY UNIFORM LEAD PEROVSKITE THIN-FILMS FORMED BY MOCVD, Integrated ferroelectrics, 6(1-4), 1995, pp. 165-172
VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS
Authors: TAKEDA E IKUZAKI K KATTO H OHJI Y HINODE K HAMADA A SAKUTA T FUNABIKI T SASAKI T
Citation: E. Takeda et al., VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS, Microelectronics and reliability, 35(3), 1995, pp. 325-363
POSITION ANNIHILATION IN SIO2 SI STRUCTURE AT LOW-TEMPERATURE/
Authors: UEDONO A MORIYA T TANIGAWA S KAWANO T OHJI Y
Citation: A. Uedono et al., POSITION ANNIHILATION IN SIO2 SI STRUCTURE AT LOW-TEMPERATURE/, Journal of applied physics, 78(5), 1995, pp. 3269-3273
UNIFORM ULTRA-THIN PB(ZR,TI)O-3 FILMS FORMED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AND THEIR ELECTRICAL CHARACTERISTICS
Authors: MIKI H OHJI Y
Citation: H. Miki et Y. Ohji, UNIFORM ULTRA-THIN PB(ZR,TI)O-3 FILMS FORMED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AND THEIR ELECTRICAL CHARACTERISTICS, JPN J A P 1, 33(9B), 1994, pp. 5143-5146
PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY REACTIVE EVAPORATION
Authors: TORII K SAITOH S OHJI Y
Citation: K. Torii et al., PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY REACTIVE EVAPORATION, JPN J A P 1, 33(9B), 1994, pp. 5287-5290
DEFECTS IN SIO2 SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM/
Authors: UEDONO A WEI L TANIGAWA S OHJI Y
Citation: A. Uedono et al., DEFECTS IN SIO2 SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM/, JPN J A P 1, 33(6A), 1994, pp. 3330-3334
POSITRONIUM FORMATION IN SIO2-FILMS GROWN ON SI SUBSTRATES STUDIED BYMONOENERGETIC POSITRON BEAMS
Authors: UEDONO A WEI L TANIGAWA S SUZUKI R OHGAKI H MIKADO T KAWANO T OHJI Y
Citation: A. Uedono et al., POSITRONIUM FORMATION IN SIO2-FILMS GROWN ON SI SUBSTRATES STUDIED BYMONOENERGETIC POSITRON BEAMS, Journal of applied physics, 75(8), 1994, pp. 3822-3828
POSITRON-ANNIHILATION IN A METAL-OXIDE-SEMICONDUCTOR STUDIED BY USINGA PULSED MONOENERGETIC POSITRON BEAM
Authors: UEDONO A WEI L TANIGAWA S SUZUKI R OHGAKI H MIKADO T OHJI Y
Citation: A. Uedono et al., POSITRON-ANNIHILATION IN A METAL-OXIDE-SEMICONDUCTOR STUDIED BY USINGA PULSED MONOENERGETIC POSITRON BEAM, Journal of applied physics, 74(12), 1993, pp. 7251-7256
STOICHIOMETRY MEASUREMENT AND ELECTRIC CHARACTERISTICS OF THIN-FILM TA2O5 INSULATOR FOR ULTRA-LARGE-SCALE INTEGRATION
Authors: SHIMIZU K KATAYAMA M FUNAKI H ARAI E NAKATA M OHJI Y IMURA R
Citation: K. Shimizu et al., STOICHIOMETRY MEASUREMENT AND ELECTRIC CHARACTERISTICS OF THIN-FILM TA2O5 INSULATOR FOR ULTRA-LARGE-SCALE INTEGRATION, Journal of applied physics, 74(1), 1993, pp. 375-380
VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS
Authors: TAKEDA E IKUZAKI K KATTO H OHJI Y HINODE K HAMADA A SAKUTA T FUNABIKI T SASAKI T
Citation: E. Takeda et al., VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS, Proceedings of the IEEE, 81(5), 1993, pp. 653-674
256-MB DRAM CIRCUIT TECHNOLOGIES FOR FILE APPLICATIONS
Authors: KITSUKAWA G HORIGUCHI M KAWAJIRI Y KAWAHARA T AKIBA T KAWASE Y TACHIBANA T SAKAI T AOKI M SHUKURI S SAGARA K NAGAI R OHJI Y HASEGAWA N YOKOYAMA N KISU T YAMASHITA H KURE T NISHIDA T
Citation: G. Kitsukawa et al., 256-MB DRAM CIRCUIT TECHNOLOGIES FOR FILE APPLICATIONS, IEEE journal of solid-state circuits, 28(11), 1993, pp. 1105-1113
Risultati: 1-13 |