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Results: 1-25 | 26-40
Results: 1-25/40
MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE
Authors: DEWSNIP DJ ORTON JW LACKLISON DE FLANNERY L ANDRIANOV AV HARRISON I HOOPER SE CHENG TS FOXON CT NOVIKOV SN BER BY KUDRIAVTSEV YA
Citation: Dj. Dewsnip et al., MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE, Semiconductor science and technology, 13(8), 1998, pp. 927-935
PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN
Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I ORTON JW LACKLISON DE REN GB HOOPER SE CHENG TS FOXON CT
Citation: Dj. Dewsnip et al., PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN, Semiconductor science and technology, 13(5), 1998, pp. 500-504
THE ELECTRON-MOBILITY AND COMPENSATION IN N-TYPE GAN
Authors: ORTON JW FOXON CT
Citation: Jw. Orton et Ct. Foxon, THE ELECTRON-MOBILITY AND COMPENSATION IN N-TYPE GAN, Semiconductor science and technology, 13(3), 1998, pp. 310-313
SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BER BY KUDRIAVTSEV YA MERKULOV AV NOVIKOV SV LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: By. Ber et al., SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 13(1), 1998, pp. 71-74
GROUP-III NITRIDE SEMICONDUCTORS FOR SHORT-WAVELENGTH LIGHT-EMITTING DEVICES
Authors: ORTON JW FOXON CT
Citation: Jw. Orton et Ct. Foxon, GROUP-III NITRIDE SEMICONDUCTORS FOR SHORT-WAVELENGTH LIGHT-EMITTING DEVICES, Reports on progress in physics, 61(1), 1998, pp. 1
STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B
Authors: FOXON CT CHENG TS JEFFS NJ DEWSNIP J FLANNERY L ORTON JW HARRISON I NOVIKOV SV BER BY KUDRIAVTSEV YA
Citation: Ct. Foxon et al., STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B, Journal of crystal growth, 190, 1998, pp. 516-518
DONOR-ACCEPTOR PAIR IN MOLECULAR-BEAM EPITAXY-GROWN GAN
Authors: REN GB DEWSNIP DJ LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: Gb. Ren et al., DONOR-ACCEPTOR PAIR IN MOLECULAR-BEAM EPITAXY-GROWN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 242-245
EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT REN GB ORTON JW MELNIK YV NIKITINA IP NIKOLAEV AE NOVIKOV SV DMITRIEV VA
Citation: Ts. Cheng et al., EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 917-920
OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN
Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I LACKLISON DE ORTON JW MORGAN J REN GB CHENG TS HOOPER SE FOXON CT
Citation: Dj. Dewsnip et al., OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN, Semiconductor science and technology, 12(1), 1997, pp. 55-58
PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE
Authors: ANDRIANOV AV LACKLISON DE ORTON JW CHENG TS FOXON CT ODONNELL KP NICHOLLS JFH
Citation: Av. Andrianov et al., PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE, Semiconductor science and technology, 12(1), 1997, pp. 59-63
EXCITON SPECTRA AND SPIN-ORBIT-SPLITTING IN GAN EPITAXIAL-FILMS
Authors: ORTON JW
Citation: Jw. Orton, EXCITON SPECTRA AND SPIN-ORBIT-SPLITTING IN GAN EPITAXIAL-FILMS, Semiconductor science and technology, 12(1), 1997, pp. 64-68
PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES
Authors: ORTON JW LACKLISON DE ANDRIANOV AV CHENG TS DEWSNIP DJ FOXON CT JENKINS LC HOOPER SE
Citation: Jw. Orton et al., PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 219-222
MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES
Authors: FOXON CT CHENG TS HOOPER SE JENKINS LC ORTON JW LACKLISON DE NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ct. Foxon et al., MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2346-2348
IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY
Authors: BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW
Citation: By. Ber et al., IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 30(3), 1996, pp. 293-296
OPTOELECTRONIC IMPLEMENTATION OF A MULTIFUNCTION CELLULAR NEURAL-NETWORK
Authors: HUNG KS CURTIS KM ORTON JW
Citation: Ks. Hung et al., OPTOELECTRONIC IMPLEMENTATION OF A MULTIFUNCTION CELLULAR NEURAL-NETWORK, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 43(8), 1996, pp. 601-608
PRACTICAL OPTOELECTRONIC NEURAL-NETWORK REALIZATIONS BASED ON THE FAULT-TOLERANCE OF THE BACKPROPAGATION ALGORITHM
Authors: ALLEN TJ HUNG KS CURTIS KM ORTON JW
Citation: Tj. Allen et al., PRACTICAL OPTOELECTRONIC NEURAL-NETWORK REALIZATIONS BASED ON THE FAULT-TOLERANCE OF THE BACKPROPAGATION ALGORITHM, IEEE transactions on neural networks, 7(2), 1996, pp. 488-500
EFFECT OF STRAIN ON GAN EXCITON SPECTRA
Authors: ORTON JW
Citation: Jw. Orton, EFFECT OF STRAIN ON GAN EXCITON SPECTRA, Semiconductor science and technology, 11(7), 1996, pp. 1026-1029
SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE)
Authors: CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW BER BY MERKULOV AV NOVIKOV SV
Citation: Ts. Cheng et al., SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE), Semiconductor science and technology, 11(4), 1996, pp. 538-541
LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE
Authors: ANDRIANOV AV LACKLISON DE ORTON JW DEWSNIP DJ HOOPER SE FOXON CT
Citation: Av. Andrianov et al., LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE, Semiconductor science and technology, 11(3), 1996, pp. 366-371
OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES
Authors: CHENG TS HOOPER SE JENKINS LC FOXON CT LACKLISON DE DEWSNIP JD ORTON JW
Citation: Ts. Cheng et al., OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 597-600
MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT JENKINS LC HOOPER SE ORTON JW NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ts. Cheng et al., MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 158(4), 1996, pp. 399-402
ELECTRICAL CHARACTERIZATION OF SINGLE BARRIER GAAS GAN/GAAS HETEROSTRUCTURES/
Authors: HUANG X CHENG TS HOOPER SE FOSTER TJ JENKINS LC WANG J FOXON CT ORTON JW EAVES L MAIN PC
Citation: X. Huang et al., ELECTRICAL CHARACTERIZATION OF SINGLE BARRIER GAAS GAN/GAAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1582-1584
AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES
Authors: JENKINS LC CHENG TS FOXON CT HOOPER SE ORTON JW NOVIKOV SV TRETYAKOV VV
Citation: Lc. Jenkins et al., AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1585-1590
REDUCED-THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: MATIN MA BENSON TM ORTON JW LACKLISON DE JEZIERSKI AF FOXON CT ROBERTS JS SALE TE
Citation: Ma. Matin et al., REDUCED-THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASER, Microwave and optical technology letters, 9(1), 1995, pp. 10-12
THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES
Authors: ORTON JW LACKLISON DE BABAALI N FOXON CT CHENG TS NOVIKOV SV JOHNSTON DFC HOOPER SE JENKINS LC CHALLIS LJ TANSLEY TL
Citation: Jw. Orton et al., THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES, Journal of electronic materials, 24(4), 1995, pp. 263-268
Risultati: 1-25 | 26-40