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Results:
1-12
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Results: 12
Authors:
MESTRIC R
RENAUD M
POMMEREAU F
MARTIN B
GABORIT F
LACOSTE G
JANZ C
LECLERC D
OTTENWALDER D
Citation: R. Mestric et al., 4-CHANNEL WAVELENGTH SELECTOR MONOLITHICALLY INTEGRATED ON INP, Electronics Letters, 34(19), 1998, pp. 1841-1843
Authors:
JANZ C
POINGT F
POMMEREAU F
GABORIT F
OTTENWALDER D
GUILLEMOT I
DAGENS B
RENAUD M
Citation: C. Janz et al., ALL-ACTIVE DUAL-ORDER MODE MACH-ZEHNDER WAVELENGTH CONVERTER FOR CO-PROPAGATIVE OPERATION, Electronics Letters, 34(19), 1998, pp. 1848-1849
Authors:
HANGLEITER A
GEIGER M
KNORR C
KONIG P
OTTENWALDER D
RIEDL T
SCHOLZ F
ZIMMERMANN M
HILLMER H
STEINHAGEN F
BURKHARD H
Citation: A. Hangleiter et al., CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 570-573
Authors:
OTTENWALDER D
FRANKOWSKY G
GFRORER O
HANGLEITER A
SCHOLZ F
Citation: D. Ottenwalder et al., CONTROL OF MONOLAYER TERRACE FORMATION IN SELECTIVE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 695-699
Authors:
GRIESINGER UA
KRONMULLER S
GEIGER M
OTTENWALDER D
SCHOLZ F
SCHWEIZER H
Citation: Ua. Griesinger et al., FABRICATION AND INVESTIGATION OF NANOSTRUCTURES AND THEIR APPLICATIONIN NEW LASER DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4058-4061
Authors:
GRIESINGER UA
SCHWEIZER H
KRONMULLER S
GEIGER M
OTTENWALDER D
SCHOLZ F
PILKUHN MH
Citation: Ua. Griesinger et al., REALIZATION OF DOT DFB LASERS, IEEE photonics technology letters, 8(5), 1996, pp. 587-589
Authors:
GEIGER M
OTTENWALDER D
SCHOLZ F
GLANZ M
RECKER C
WINTERFELD J
SCHUMANN H
Citation: M. Geiger et al., BIS-PHOSPHINO-METHANE - A NEW PRECURSOR FOR METALORGANIC VAPOR-PHASE EPITAXY OF PHOSPHIDES, Journal of crystal growth, 169(4), 1996, pp. 625-628
Authors:
KNORR C
WILHELM U
HARLE V
OTTENWALDER D
SCHOLZ F
HANGLEITER A
Citation: C. Knorr et al., A MECHANISM FOR LOW-POWER ALL-OPTICAL SWITCHING IN MULTIPLE-QUANTUM-WELL STRUCTURES, Applied physics letters, 69(27), 1996, pp. 4212-4214
Authors:
KONIG P
GEIGER M
OTTENWALDER D
SCHOLZ F
HANGLEITER A
Citation: P. Konig et al., CONTROL OF FIELD SCREENING EFFECTS IN GAINAS(P) GAINASP QUANTUM-CONFINED STARK-EFFECT MODULATOR STRUCTURES/, Applied physics letters, 69(18), 1996, pp. 2698-2700
Authors:
SCHOLZ F
OTTENWALDER D
ECKEL M
WILD M
FRANKOWSKY G
WACKER T
HANGLEITER A
Citation: F. Scholz et al., SELECTIVE-AREA EPITAXY OF GAINAS USING CONVENTIONAL AND NOVEL GROUP-III PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 242-248
Authors:
ECKEL M
OTTENWALDER D
SCHOLZ F
FRANKOWSKY G
WACKER T
HANGLEITER A
Citation: M. Eckel et al., IMPROVED COMPOSITION HOMOGENEITY DURING SELECTIVE-AREA EPITAXY OF GAINAS USING A NOVEL IN PRECURSOR, Applied physics letters, 64(7), 1994, pp. 854-856
Authors:
HOMMEL J
OTTENWALDER D
HARLE V
SCHNEIDER F
MENSCHIG A
SCHOLZ F
SCHWEIZER H
Citation: J. Hommel et al., SPECIAL ANGLE TECHNIQUE WITH AR O2 - RIBE FOR THE FABRICATION OF STEEP NM-SCALE PROFILES IN INGAASP/INP AND SUBSEQUENT EPITAXIAL OVERGROWTH/, Microelectronic engineering, 21(1-4), 1993, pp. 333-336
Risultati:
1-12
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