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Results: 1-25 | 26-28
Results: 1-25/28
LOW THERMAL BUDGET IN-SITU SURFACE CLEANING FOR SELECTIVE SILICON EPITAXY
Authors: CELIK SM OZTURK MC
Citation: Sm. Celik et Mc. Ozturk, LOW THERMAL BUDGET IN-SITU SURFACE CLEANING FOR SELECTIVE SILICON EPITAXY, Journal of the Electrochemical Society, 145(10), 1998, pp. 3602-3609
SUPPRESSION OF OXIDATION-ENHANCED BORON-DIFFUSION IN SILICON BY CARBON IMPLANTATION AND CHARACTERIZATION OF MOSFETS WITH CARBON-IMPLANTED CHANNELS
Authors: BAN I OZTURK MC DEMIRLIOGLU EK
Citation: I. Ban et al., SUPPRESSION OF OXIDATION-ENHANCED BORON-DIFFUSION IN SILICON BY CARBON IMPLANTATION AND CHARACTERIZATION OF MOSFETS WITH CARBON-IMPLANTED CHANNELS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1544-1551
OPTIMIZATION OF PROCESS CONDITIONS FOR SELECTIVE SILICON EPITAXY USING DISILANE, HYDROGEN, AND CHLORINE
Authors: ONEIL PA OZTURK MC VIOLETTE KE BATCHELOR D CHRISTENSEN K MAHER DM
Citation: Pa. Oneil et al., OPTIMIZATION OF PROCESS CONDITIONS FOR SELECTIVE SILICON EPITAXY USING DISILANE, HYDROGEN, AND CHLORINE, Journal of the Electrochemical Society, 144(9), 1997, pp. 3309-3315
RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS
Authors: LI VZQ MIRABEDINI MR KUEHN RT WORTMAN JJ OZTURK MC BATCHELOR D CHRISTENSEN K MAHER DM
Citation: Vzq. Li et al., RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 71(23), 1997, pp. 3388-3390
DEGRADATION OF SILICON DIOXIDE DURING SELECTIVE SILICON EPITAXY IN A DICHLOROSILANE ENVIRONMENT
Authors: HOBBS CC WORTMAN JJ OZTURK MC
Citation: Cc. Hobbs et al., DEGRADATION OF SILICON DIOXIDE DURING SELECTIVE SILICON EPITAXY IN A DICHLOROSILANE ENVIRONMENT, Journal of electronic materials, 25(7), 1996, pp. 1037-1043
A STUDY ON CHANNEL DESIGN FOR 0.1 MU-M BURIED P-CHANNEL MOSFET
Authors: SHAMARAO P OZTURK MC
Citation: P. Shamarao et Mc. Ozturk, A STUDY ON CHANNEL DESIGN FOR 0.1 MU-M BURIED P-CHANNEL MOSFET, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1942-1949
ON THE MECHANISM OF BORON INCORPORATION DURING SILICON EPITAXY BY MEANS OF CHEMICAL-VAPOR-DEPOSITION
Authors: KUHNE H FISCHER A OZTURK MC SANGANERIA MK
Citation: H. Kuhne et al., ON THE MECHANISM OF BORON INCORPORATION DURING SILICON EPITAXY BY MEANS OF CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 143(2), 1996, pp. 634-639
SILICON NUCLEATION AND FILM EVOLUTION ON SILICON DIOXIDE USING DISILANE - RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF VERY SMOOTH SILICON ATHIGH DEPOSITION RATES
Authors: VIOLETTE KE OZTURK MC CHRISTENSEN KN MAHER DM
Citation: Ke. Violette et al., SILICON NUCLEATION AND FILM EVOLUTION ON SILICON DIOXIDE USING DISILANE - RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF VERY SMOOTH SILICON ATHIGH DEPOSITION RATES, Journal of the Electrochemical Society, 143(2), 1996, pp. 649-657
ON THE ROLE OF CHLORINE IN SELECTIVE SILICON EPITAXY BY CHEMICAL-VAPOR-DEPOSITION
Authors: VIOLETTE KE ONEIL PA OZTURK MC CHRISTENSEN K MAHER DM
Citation: Ke. Violette et al., ON THE ROLE OF CHLORINE IN SELECTIVE SILICON EPITAXY BY CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 143(10), 1996, pp. 3290-3296
EFFECTS OF CARBON IMPLANTATION ON GENERATION LIFETIME IN SILICON
Authors: BAN IH OZTURK MC CHRISTENSEN K MAHER DM
Citation: Ih. Ban et al., EFFECTS OF CARBON IMPLANTATION ON GENERATION LIFETIME IN SILICON, Applied physics letters, 68(4), 1996, pp. 499-501
LOW-TEMPERATURE SELECTIVE SILICON EPITAXY BY ULTRA-HIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING SI2H6, H-2 AND CL-2
Authors: VIOLETTE KE ONEIL PA OZTURK MC CHRISTENSEN K MAHER DM
Citation: Ke. Violette et al., LOW-TEMPERATURE SELECTIVE SILICON EPITAXY BY ULTRA-HIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING SI2H6, H-2 AND CL-2, Applied physics letters, 68(1), 1996, pp. 66-68
EFFECT OF COMPOSITION ON PHASE-FORMATION AND MORPHOLOGY IN TI-SI1-XGEX SOLID-PHASE REACTIONS
Authors: ALDRICH DB CHEN YL SAYERS DE NEMANICH RJ ASHBURN SP OZTURK MC
Citation: Db. Aldrich et al., EFFECT OF COMPOSITION ON PHASE-FORMATION AND MORPHOLOGY IN TI-SI1-XGEX SOLID-PHASE REACTIONS, Journal of materials research, 10(11), 1995, pp. 2849-2863
A STUDY OF SELF-ALIGNED FORMATION OF C54 TI(SI1-YGEY)(2) TO P(+) AND N(+) SI0.7GE0.3 ALLOYS USING RAPID THERMAL ANNEALING
Authors: ASHBURN SP OZTURK MC HARRIS G MAHER DM
Citation: Sp. Ashburn et al., A STUDY OF SELF-ALIGNED FORMATION OF C54 TI(SI1-YGEY)(2) TO P(+) AND N(+) SI0.7GE0.3 ALLOYS USING RAPID THERMAL ANNEALING, Journal of electronic materials, 24(6), 1995, pp. 773-780
ULTRA-SHALLOW RAISED P-N JUNCTIONS FORMED BY DIFFUSION FROM SELECTIVELY DEPOSITED IN-SITU DOPED SI0.7GE0.3()
Authors: GRIDER DT OZTURK MC ASHBURN SP WORTMAN JJ
Citation: Dt. Grider et al., ULTRA-SHALLOW RAISED P-N JUNCTIONS FORMED BY DIFFUSION FROM SELECTIVELY DEPOSITED IN-SITU DOPED SI0.7GE0.3(), Journal of electronic materials, 24(10), 1995, pp. 1369-1376
SMOOTH AMORPHOUS-SILICON DEPOSITION ON SILICON DIOXIDE WITH HIGH DEPOSITION RATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING DISILANE
Authors: VIOLETTE KE OZTURK MC CHRISTENSEN K MAHER DM
Citation: Ke. Violette et al., SMOOTH AMORPHOUS-SILICON DEPOSITION ON SILICON DIOXIDE WITH HIGH DEPOSITION RATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING DISILANE, Materials letters, 25(5-6), 1995, pp. 305-309
STABILITY OF C54 TITANIUM GERMANOSILICIDE ON A SILICON-GERMANIUM ALLOY SUBSTRATE
Authors: ALDRICH DB CHEN YL SAYERS DE NEMANICH RJ ASHBURN SP OZTURK MC
Citation: Db. Aldrich et al., STABILITY OF C54 TITANIUM GERMANOSILICIDE ON A SILICON-GERMANIUM ALLOY SUBSTRATE, Journal of applied physics, 77(10), 1995, pp. 5107-5114
ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ONTO (100)SILICON .1. THE INFLUENCE OF PREBAKE ON (EPITAXY SUBSTRATE) INTERFACIAL OXYGEN AND CARBON LEVELS
Authors: SANGANERIA MK OZTURK MC HARRIS G VIOLETTE KE BAN I LEE CA MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ONTO (100)SILICON .1. THE INFLUENCE OF PREBAKE ON (EPITAXY SUBSTRATE) INTERFACIAL OXYGEN AND CARBON LEVELS, Journal of the Electrochemical Society, 142(11), 1995, pp. 3961-3969
ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ON (100)SILICON .2. CARBON INCORPORATION INTO LAYERS AND AT INTERFACES OF MULTILAYER STRUCTURES
Authors: SANGANERIA MK OZTURK MC HARRIS G VIOLETTE KE LEE CA MAHER DM
Citation: Mk. Sanganeria et al., ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF EPITAXIALSILICON ON (100)SILICON .2. CARBON INCORPORATION INTO LAYERS AND AT INTERFACES OF MULTILAYER STRUCTURES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3970-3974
BORON INCORPORATION IN EPITAXIAL SILICON USING SI2H6 AND B2H6 IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC HARRIS G MAHER DM
Citation: Mk. Sanganeria et al., BORON INCORPORATION IN EPITAXIAL SILICON USING SI2H6 AND B2H6 IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of the Electrochemical Society, 142(1), 1995, pp. 285-289
HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: SANGANERIA MK OZTURK MC VIOLETTE KE HARRIS G LEE CA MAHER DM
Citation: Mk. Sanganeria et al., HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Applied physics letters, 66(10), 1995, pp. 1255-1257
LOW THERMAL BUDGET IN-SITU CLEANING AND PASSIVATION FOR SILICON EPITAXY IN A MULTICHAMBER RAPID THERMAL-PROCESSING CLUSTER TOOL
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC HARRIS G LEE CA MAHER DM
Citation: Mk. Sanganeria et al., LOW THERMAL BUDGET IN-SITU CLEANING AND PASSIVATION FOR SILICON EPITAXY IN A MULTICHAMBER RAPID THERMAL-PROCESSING CLUSTER TOOL, Materials letters, 21(2), 1994, pp. 137-141
GROWTH-KINETICS, SILICON NUCLEATION ON SILICON DIOXIDE, AND SELECTIVEEPITAXY USING DISILANE AND HYDROGEN IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: VIOLETTE KE SANGANERIA MK OZTURK MC HARRIS G MAHER DM
Citation: Ke. Violette et al., GROWTH-KINETICS, SILICON NUCLEATION ON SILICON DIOXIDE, AND SELECTIVEEPITAXY USING DISILANE AND HYDROGEN IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of the Electrochemical Society, 141(11), 1994, pp. 3269-3273
EFFECTS OF OXYGEN DOPING ON PROPERTIES OF MICROCRYSTALLINE SILICON FILM GROWN USING RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: XU XL MISRA V OZTURK MC WORTMAN JJ HARRIS GS MAHER DM SPANOS L IRENE EA
Citation: Xl. Xu et al., EFFECTS OF OXYGEN DOPING ON PROPERTIES OF MICROCRYSTALLINE SILICON FILM GROWN USING RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 22(11), 1993, pp. 1345-1351
FORMATION OF SELF-ALIGNED TISI2 CONTACTS TO SI AT LOW-TEMPERATURES USING TICL4 AND SIH4 WITH SELECTIVE IN-SITU PREDEPOSITION OF SIXGE1-X
Authors: XING GC OZTURK MC
Citation: Gc. Xing et Mc. Ozturk, FORMATION OF SELF-ALIGNED TISI2 CONTACTS TO SI AT LOW-TEMPERATURES USING TICL4 AND SIH4 WITH SELECTIVE IN-SITU PREDEPOSITION OF SIXGE1-X, Materials letters, 17(6), 1993, pp. 379-382
PHASE-TRANSITIONS DURING SOLID-STATE FORMATION OF COBALT GERMANIDE BYRAPID THERMAL ANNEALING
Authors: ASHBURN SP OZTURK MC HARRIS G MAHER DM
Citation: Sp. Ashburn et al., PHASE-TRANSITIONS DURING SOLID-STATE FORMATION OF COBALT GERMANIDE BYRAPID THERMAL ANNEALING, Journal of applied physics, 74(7), 1993, pp. 4455-4460
Risultati: 1-25 | 26-28