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Results:
1-19
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Results: 19
Authors:
Kasic, A
Schubert, M
Rheinlander, B
Riede, V
Einfeldt, S
Hommel, D
Kuhn, B
Off, J
Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76
Authors:
Schubert, M
Kasic, A
Sik, J
Einfeldt, S
Hommel, D
Harle, V
Off, J
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 178-181
Authors:
Hangleiter, A
Heppel, S
Off, J
Kuhn, B
Scholz, F
Bader, S
Hahn, B
Harle, V
Citation: A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526
Authors:
Kasic, A
Schubert, M
Off, J
Scholz, F
Citation: A. Kasic et al., Strain and composition dependence of the E-1(TO) mode in hexagonal Al1-xInxN thin films, APPL PHYS L, 78(11), 2001, pp. 1526-1528
Authors:
Scholz, F
Off, J
Fehrenbacher, E
Gfrorer, O
Brockt, G
Citation: F. Scholz et al., Investigations on structural properties of GaInN-GaN multi quantum well structures, PHYS ST S-A, 180(1), 2000, pp. 315-320
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Scholz, F
Off, J
Stutzmann, M
Citation: A. Krtschil et al., Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, APPL PHYS L, 77(4), 2000, pp. 546-548
Authors:
Gorgens, L
Ambacher, O
Stutzmann, M
Miskys, C
Scholz, F
Off, J
Citation: L. Gorgens et al., Characterization of InGaN thin films using high-resolution x-ray diffraction, APPL PHYS L, 76(5), 2000, pp. 577-579
Authors:
Scholz, F
Off, J
Kniest, A
Gorgens, L
Ambacher, O
Citation: F. Scholz et al., Influence of strain and buffer layer type on In incorporation during GaInNMOVPE, MAT SCI E B, 59(1-3), 1999, pp. 268-273
Authors:
Im, JS
Kollmer, H
Off, J
Scholz, F
Hangleiter, A
Citation: Js. Im et al., Carrier confinement in GaInNi/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field, MAT SCI E B, 59(1-3), 1999, pp. 315-318
Authors:
Binet, F
Duboz, JY
Grattepain, C
Scholz, F
Off, J
Citation: F. Binet et al., Carrier capture in InGaN quantum wells and hot carrier effects in GaN, MAT SCI E B, 59(1-3), 1999, pp. 323-329
Authors:
Hofmann, R
Wagner, V
Neuner, M
Off, J
Scholz, F
Schweizer, H
Citation: R. Hofmann et al., Optically pumped GaInN/GaN-DFB lasers: overgrown lasers and vertical modes, MAT SCI E B, 59(1-3), 1999, pp. 386-389
Authors:
Gfrorer, O
Gemmer, C
Off, J
Im, JS
Scholz, F
Hangleiter, A
Citation: O. Gfrorer et al., Direct observation of pyroelectric fields in InGaN/GaN and AlGaN/GaN heterostructures, PHYS ST S-B, 216(1), 1999, pp. 405-408
Authors:
Hangleiter, A
Im, JS
Off, J
Scholz, F
Citation: A. Hangleiter et al., Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects, PHYS ST S-B, 216(1), 1999, pp. 427-430
Authors:
Off, J
Scholz, F
Fehrenbacher, E
Gfrorer, O
Hangleiter, A
Brockt, G
Lakner, H
Citation: J. Off et al., Investigations on the V-defect formation in GaInN-GaN multi quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 529-532
Authors:
Schubert, M
Woollam, JA
Kasic, A
Rheinlander, B
Off, J
Kuhn, B
Scholz, F
Citation: M. Schubert et al., Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry, PHYS ST S-B, 216(1), 1999, pp. 655-658
Authors:
Binet, F
Duboz, JY
Off, J
Scholz, F
Citation: F. Binet et al., High-excitation photoluminescence in GaN: Hot-carrier effects and the Motttransition, PHYS REV B, 60(7), 1999, pp. 4715-4722
Authors:
Heppel, S
Wirth, R
Off, J
Scholz, F
Hangleiter, A
Obloh, H
Wagner, J
Kirchner, C
Kamp, M
Citation: S. Heppel et al., Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides, PHYS ST S-A, 176(1), 1999, pp. 73-77
Authors:
Kollmer, H
Im, JS
Heppel, S
Off, J
Scholz, F
Hangleiter, A
Citation: H. Kollmer et al., Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields, APPL PHYS L, 74(1), 1999, pp. 82-84
Authors:
Off, J
Kniest, A
Vorbeck, C
Scholz, F
Ambacher, O
Citation: J. Off et al., Influence of buffer layers on the In-content of GaInN layers, J CRYST GR, 195(1-4), 1998, pp. 286-290
Risultati:
1-19
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