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Results: 1-25/26
Authors:
Dollfus, P
Galdin, S
Hesto, P
Osten, HJ
Citation: P. Dollfus et al., Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures, J MAT S-M E, 12(4-6), 2001, pp. 245-248
Authors:
Osten, HJ
Knoll, D
Rucker, H
Citation: Hj. Osten et al., Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application, MAT SCI E B, 87(3), 2001, pp. 262-270
Authors:
Osten, HJ
Liu, JP
Bugiel, E
Mussig, HJ
Zaumseil, P
Citation: Hj. Osten et al., Epitaxial growth of praseodymium oxide on silicon, MAT SCI E B, 87(3), 2001, pp. 297-302
Authors:
Osten, HJ
Rucker, H
Liu, JP
Heinemann, B
Citation: Hj. Osten et al., Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe, MICROEL ENG, 56(1-2), 2001, pp. 209-212
Authors:
Osten, HJ
Liu, JP
Mussig, HJ
Zaumseil, P
Citation: Hj. Osten et al., Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide, MICROEL REL, 41(7), 2001, pp. 991-994
Authors:
Liu, JP
Zaumseil, P
Bugiel, E
Osten, HJ
Citation: Jp. Liu et al., Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal tocubic phase transition during postgrowth N-2 annealing, APPL PHYS L, 79(5), 2001, pp. 671-673
Authors:
Wittmaack, K
Griesche, J
Osten, HJ
Patel, SB
Citation: K. Wittmaack et al., In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy, J VAC SCI B, 18(1), 2000, pp. 524-528
Authors:
Galdin, S
Dollfus, P
Aubry-Fortuna, V
Hesto, P
Osten, HJ
Citation: S. Galdin et al., Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001), SEMIC SCI T, 15(6), 2000, pp. 565-572
Authors:
Teichert, S
Falke, M
Giesler, H
Sarkar, DK
Beddies, G
Hinneberg, HJ
Lippert, G
Griesche, J
Osten, HJ
Citation: S. Teichert et al., Thin films of CoSi2 on Si1-yCy substrate layers, MICROEL ENG, 50(1-4), 2000, pp. 193-197
Authors:
Knoll, D
Heinemann, B
Ehwald, KE
Tillack, B
Schley, P
Osten, HJ
Citation: D. Knoll et al., Comparison of SiGe and SiGe : C heterojunction bipolar transistors, THIN SOL FI, 369(1-2), 2000, pp. 342-346
Authors:
Heinemann, B
Knoll, D
Fischer, GG
Schley, P
Osten, HJ
Citation: B. Heinemann et al., Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers, THIN SOL FI, 369(1-2), 2000, pp. 347-351
Authors:
Osten, HJ
Citation: Hj. Osten, MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001), THIN SOL FI, 367(1-2), 2000, pp. 101-111
Authors:
Fischer, A
Osten, HJ
Richter, H
Citation: A. Fischer et al., An equilibrium model for buried SiGe strained layers, SOL ST ELEC, 44(5), 2000, pp. 869-873
Authors:
Roichman, Y
Berner, A
Brener, R
Cytermann, C
Shilo, D
Zolotoyabko, E
Eizenberg, M
Osten, HJ
Citation: Y. Roichman et al., Co silicide formation on epitaxial Si1-yCy/Si (001) layers, J APPL PHYS, 87(7), 2000, pp. 3306-3312
Authors:
Osten, HJ
Lippert, G
Liu, JP
Kruger, D
Citation: Hj. Osten et al., Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon, APPL PHYS L, 77(13), 2000, pp. 2000-2002
Authors:
Liu, JP
Osten, HJ
Citation: Jp. Liu et Hj. Osten, Substitutional carbon incorporation during Si1-x-yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon, APPL PHYS L, 76(24), 2000, pp. 3546-3548
Authors:
Osten, HJ
Griesche, J
Gaworzewski, P
Bolze, KD
Citation: Hj. Osten et al., Influence of interstitial carbon defects on electron transport in strainedSi1-yCy layers on Si(001), APPL PHYS L, 76(2), 2000, pp. 200-202
Authors:
Edelman, F
Raz, T
Komem, Y
Zaumseil, P
Osten, HJ
Capitan, M
Citation: F. Edelman et al., Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy, PHIL MAG A, 79(11), 1999, pp. 2617-2628
Authors:
Anteney, IM
Lippert, G
Ashburn, P
Osten, HJ
Heinemann, B
Parker, GJ
Knoll, D
Citation: Im. Anteney et al., Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's, IEEE ELEC D, 20(3), 1999, pp. 116-118
Authors:
Edelman, F
Raz, T
Komem, Y
Stolzer, M
Werner, P
Zaumseil, P
Osten, HJ
Griesche, J
Capitan, M
Citation: F. Edelman et al., Stability and transport properties of microcrystalline Si1-xGex films, THIN SOL FI, 337(1-2), 1999, pp. 152-157
Authors:
Teichert, S
Falke, M
Giesler, H
Beddies, G
Hinneberg, HJ
Lippert, G
Griesche, J
Osten, HJ
Citation: S. Teichert et al., Silicide reaction of Co with Si0.999C0.001, SOL ST ELEC, 43(6), 1999, pp. 1051-1054
Authors:
Garrido, B
Morante, JR
Franz, M
Pressel, K
Kruger, D
Zaumseil, P
Osten, HJ
Citation: B. Garrido et al., Behavior of strained Si1-yCy (0 <= y <= 0.02) layers grown on silicon during wet oxidation, J APPL PHYS, 85(2), 1999, pp. 833-840
Authors:
Osten, HJ
Knoll, D
Heinemann, B
Schley, P
Citation: Hj. Osten et al., Increasing process margin in SiGe heterojunction bipolar technology by adding carbon, IEEE DEVICE, 46(9), 1999, pp. 1910-1912
Authors:
Rucker, H
Heinemann, B
Ropke, W
Kurps, R
Kruger, D
Lippert, G
Osten, HJ
Citation: H. Rucker et al., Suppressed diffusion of boron and carbon in carbon-rich silicon (vol 73, pg 1682, 1998), APPL PHYS L, 75(1), 1999, pp. 147-147
Authors:
Osten, HJ
Griesche, J
Scalese, S
Citation: Hj. Osten et al., Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(001)grown by molecular beam epitaxy, APPL PHYS L, 74(6), 1999, pp. 836-838