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Results:
1-10
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Results: 10
Authors:
Vogel, MJ
Ostrogorsky, AG
Citation: Mj. Vogel et Ag. Ostrogorsky, Directional solidification using a baffle in microgravity, ACT ASTRONA, 48(2-3), 2001, pp. 93-100
Authors:
Marin, C
Ostrogorsky, AG
Foulon, G
Jundt, D
Motakef, S
Citation: C. Marin et al., Infrared extinction coefficient of LiNbO3 at temperatures to 1150 degrees C: Semiconductor behavior of a metal oxide at high temperature, APPL PHYS L, 78(10), 2001, pp. 1379-1381
Authors:
Nicoara, I
Nicoara, D
Ostrogorsky, AG
Marin, C
Peignier, T
Citation: I. Nicoara et al., Growth and characterization of shaped GaSb crystals, J CRYST GR, 220(1-2), 2000, pp. 1-5
Authors:
Marin, C
Ostrogorsky, AG
Citation: C. Marin et Ag. Ostrogorsky, Bulk growth of quasi-binary quaternary alloys (vol 211, pg 194, 2000), J CRYST GR, 218(1), 2000, pp. 141-141
Authors:
Dutta, PS
Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Segregation of Ga in Ge and InSb in GaSb, J CRYST GR, 217(4), 2000, pp. 360-365
Authors:
Marin, C
Ostrogorsky, AG
Citation: C. Marin et Ag. Ostrogorsky, Bulk growth of quasi-binary quaternary alloys, J CRYST GR, 211(1-4), 2000, pp. 194-201
Authors:
Marin, C
Ostrogorsky, AG
Citation: C. Marin et Ag. Ostrogorsky, Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle, J CRYST GR, 211(1-4), 2000, pp. 378-383
Authors:
Dutta, PS
Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Melt growth of quasi-binary (GaSb)(1-x)(InAs)(x) crystals, J CRYST GR, 199, 1999, pp. 384-389
Authors:
Dutta, PS
Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Segregation of tellurium in GaSb single crystals and associated diffusion coefficient in the solute layer, J CRYST GR, 197(4), 1999, pp. 749-754
Authors:
Dutta, PS
Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Strong band gap narrowing in quasi-binary (GaSb)(1-x)(InAs)(x) crystals grown from melt, J CRYST GR, 197(1-2), 1999, pp. 1-6
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1-10
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