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Results: 1-13 |
Results: 13
LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/
Authors: KHOO EA PABLA AS WOODHEAD J DAVID JPR GREY R REES GJ
Citation: Ea. Khoo et al., LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/, Electronics Letters, 33(11), 1997, pp. 957-958
EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIGUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS HOGG RA
Citation: Jpr. David et al., EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES, Applied physics letters, 68(6), 1996, pp. 820-822
PARTIAL SCREENING OF INTERNAL ELECTRIC-FIELDS IN STRAINED PIEZOELECTRIC QUANTUM-WELL LASERS - IMPLICATIONS FOR OPTOELECTRONIC INTEGRATION
Authors: PABLA AS WOODHEAD J KHOO EA GREY R DAVID JPR REES GJ
Citation: As. Pabla et al., PARTIAL SCREENING OF INTERNAL ELECTRIC-FIELDS IN STRAINED PIEZOELECTRIC QUANTUM-WELL LASERS - IMPLICATIONS FOR OPTOELECTRONIC INTEGRATION, Applied physics letters, 68(12), 1996, pp. 1595-1597
PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIQUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS
Citation: Jpr. David et al., PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 42-46
INXGA1-XAS INP QUANTUM-WELL STRUCTURES GROWN ON [111]B INP/
Authors: HOPKINSON M DAVID JPR KHOO EA PABLA AS WOODHEAD J REES GJ
Citation: M. Hopkinson et al., INXGA1-XAS INP QUANTUM-WELL STRUCTURES GROWN ON [111]B INP/, Microelectronics, 26(8), 1995, pp. 805-810
GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/
Authors: GREY R DAVID JPR HILL G PABLA AS PATE MA REES GJ ROBSON PN RODRIGUEZGIRONES PJ SALE TE WOODHEAD J FISHER TA HOGG RA MOWBRAY DJ SKOLNICK MS WHITTAKER DM WILLCOX ARK
Citation: R. Grey et al., GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/, Microelectronics, 26(8), 1995, pp. 811-820
GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/
Authors: DAVID JPR GREY R REES GJ PABLA AS SALE TE WOODHEAD J SANCHEZROJAS JL PATE MA HILL G ROBSON PN HOGG RA FISHER TA SKOLNICK MS WHITTAKER DM WILLCOX ARK MOWBRAY DJ
Citation: Jpr. David et al., GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/, Journal of electronic materials, 23(9), 1994, pp. 975-982
SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/
Authors: FISHER TA HOGG RA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ DAVID JPR PABLA AS REES GJ GREY R SANCHEZROJAS JL WOODHEAD J HILL G PATE MA ROBSON PN
Citation: Ta. Fisher et al., SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/, Solid-state electronics, 37(4-6), 1994, pp. 645-648
CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS/
Authors: SALE TE WOODHEAD J REES GJ GREY R DAVID JPR PABLA AS RODRIGUEZGIRONES PJ ROBSON PN HOGG RA SKOLNICK MS
Citation: Te. Sale et al., CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS/, Journal of applied physics, 76(9), 1994, pp. 5447-5452
ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M/
Authors: PABLA AS HOPKINSON M DAVID JPR KHOO EA REES GJ
Citation: As. Pabla et al., ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M/, Electronics Letters, 30(20), 1994, pp. 1707-1708
ALL-OPTICAL BISTABLE SWITCHING IN A STRAINED PIEZOELECTRIC SELF-ELECTRO-OPTIC EFFECT DEVICE
Authors: PABLA AS WOODHEAD J GREY R REES GJ DAVID JPR PATE MA ROBSON PN
Citation: As. Pabla et al., ALL-OPTICAL BISTABLE SWITCHING IN A STRAINED PIEZOELECTRIC SELF-ELECTRO-OPTIC EFFECT DEVICE, Electronics Letters, 30(18), 1994, pp. 1521-1522
PIEZOELECTRIC-FIELD EFFECTS ON TRANSITION ENERGIES, OSCILLATOR-STRENGTHS, AND LEVEL WIDTHS IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/
Authors: HOGG RA FISHER TA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ DAVID JPR PABLA AS REES GJ GREY R WOODHEAD J SANCHEZROJAS JL HILL G PATE MA ROBSON PN
Citation: Ra. Hogg et al., PIEZOELECTRIC-FIELD EFFECTS ON TRANSITION ENERGIES, OSCILLATOR-STRENGTHS, AND LEVEL WIDTHS IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 48(11), 1993, pp. 8491-8494
TAILORING OF INTERNAL FIELDS IN INGAAS GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS/
Authors: PABLA AS SANCHEZROJAS JL WOODHEAD J GREY R DAVID JPR REES GJ HILL G PATE MA ROBSON PN HOGG RA FISHER TA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ
Citation: As. Pabla et al., TAILORING OF INTERNAL FIELDS IN INGAAS GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS/, Applied physics letters, 63(6), 1993, pp. 752-754
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