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MULLER B
HEUN S
LANTIER R
RUBINI S
PAGGEL JJ
SORBA L
BONANNI A
LAZZARINO M
BONANNI B
FRANCIOSI A
NAPOLITANI E
ROMANATO F
DRIGO A
BONARD JM
GANIERE JD
LAZZARINI L
SALVIATI G
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PAGGEL JJ
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FRANCIOSI A
Citation: Jm. Bonard et al., COMBINED TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF DEGRADATION IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREENLASERS/, Journal of applied physics, 84(3), 1998, pp. 1263-1273
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HEUN S
PAGGEL JJ
SORBA L
RUBINI S
BONANNI A
LANTIER R
LAZZARINO M
BONANNI B
FRANCIOSI A
BONARD JM
GANIERE JD
ZHUANG Y
BAUER G
Citation: S. Heun et al., STRAIN AND SURFACE-MORPHOLOGY IN LATTICE-MATCHED ZNSE INXGA1-XAS HETEROSTRUCTURES/, Journal of applied physics, 83(5), 1998, pp. 2504-2510
Authors:
BONARD JM
GANIERE JD
VANZETTI L
PAGGEL JJ
SORBA L
FRANCIOSI A
HERVE D
MOLVA E
Citation: Jm. Bonard et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF EXTENDED DEFECTS IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREEN LASERS/, Journal of applied physics, 83(4), 1998, pp. 1945-1952
Authors:
HEUN S
PAGGEL JJ
SORBA L
RUBINI S
FRANCIOSI A
BONARD JM
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Citation: S. Heun et al., LOCAL INTERFACE COMPOSITION AND EXTENDED DEFECT DENSITY IN ZNSE GAAS(001) AND ZNSE/IN0.04GA0.96AS(001) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1279-1285
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Citation: Jm. Bonard et al., STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS, Philosophical magazine letters, 75(4), 1997, pp. 219-226
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PAGGEL JJ
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HASSELBLATT M
HORN K
Citation: Mn. Piancastelli et al., ASSIGNMENT OF REST-ATOM SURFACE CORE-LEVEL SHIFT THROUGH ADSORPTION-SITE SELECTIVITY OF METHOXY ON SI(111)-7X7, Physical review. B, Condensed matter, 56(20), 1997, pp. 12737-12740
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FRANCIOSI A
Citation: M. Lazzeri et al., ELECTRICAL CHARACTERIZATION OF ENGINEERED ZNSE-GAAS HETEROJUNCTION DIODES, Journal of crystal growth, 175, 1997, pp. 603-607
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Citation: S. Heun et al., INTERFACE COMPOSITION AND STACKING-FAULT DENSITY IN II-VI III-V HETEROSTRUCTURES/, Applied physics letters, 70(2), 1997, pp. 237-239
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VANZETTI L
BONANNI A
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PELUSO T
TAPFER L
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VANZETTI L
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FRANCIOSI A
Citation: M. Lazzarino et al., IMPROVED CONTACT RESISTANCE TO N-TYPE WIDE-GAP II-VI SEMICONDUCTORS, Journal of crystal growth, 159(1-4), 1996, pp. 718-722
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LAZZERI M
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FRANCIOSI A
BONARD JM
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Citation: V. Pellegrini et al., TUNING OF ZNSE-GAAS BAND DISCONTINUITIES IN HETEROJUNCTION DIODES, Applied physics letters, 69(21), 1996, pp. 3233-3235
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